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Items: 1 to 20 of 626

1.

Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.

Nguyen HP, Cui K, Zhang S, Djavid M, Korinek A, Botton GA, Mi Z.

Nano Lett. 2012 Mar 14;12(3):1317-23. doi: 10.1021/nl203860b. Epub 2012 Feb 2.

PMID:
22283508
2.

Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.

Jang LW, Ju JW, Jeon DW, Park JW, Polyakov AY, Lee SJ, Baek JH, Lee SM, Cho YH, Lee IH.

Opt Express. 2012 Mar 12;20(6):6036-41. doi: 10.1364/OE.20.006036.

PMID:
22418481
3.

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

Lin BC, Chen KJ, Wang CH, Chiu CH, Lan YP, Lin CC, Lee PT, Shih MH, Kuo YK, Kuo HC.

Opt Express. 2014 Jan 13;22(1):463-9. doi: 10.1364/OE.22.000463.

PMID:
24515006
4.
5.

Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon.

Nguyen HP, Djavid M, Cui K, Mi Z.

Nanotechnology. 2012 May 17;23(19):194012. doi: 10.1088/0957-4484/23/19/194012. Epub 2012 Apr 27.

PMID:
22539212
6.

Epitaxial growth of InGaN nanowire arrays for light emitting diodes.

Hahn C, Zhang Z, Fu A, Wu CH, Hwang YJ, Gargas DJ, Yang P.

ACS Nano. 2011 May 24;5(5):3970-6. doi: 10.1021/nn200521r. Epub 2011 Apr 25.

PMID:
21495684
7.

A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.

Park H, Baik KH, Kim J, Ren F, Pearton SJ.

Opt Express. 2013 May 20;21(10):12908-13. doi: 10.1364/OE.21.012908.

PMID:
23736510
8.

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.

Li Q, Westlake KR, Crawford MH, Lee SR, Koleske DD, Figiel JJ, Cross KC, Fathololoumi S, Mi Z, Wang GT.

Opt Express. 2011 Dec 5;19(25):25528-34. doi: 10.1364/OE.19.025528.

PMID:
22273946
9.

Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.

Park YJ, Kim HY, Ryu JH, Kim HK, Kang JH, Han N, Han M, Jeong H, Jeong MS, Hong CH.

Opt Express. 2011 Jan 31;19(3):2029-36. doi: 10.1364/OE.19.002029.

PMID:
21369019
10.

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.

Son JH, Lee JL.

Opt Express. 2010 Mar 15;18(6):5466-71. doi: 10.1364/OE.18.005466.

PMID:
20389563
11.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.

Opt Express. 2014 Jan 13;22(1):809-16. doi: 10.1364/OE.22.000809.

PMID:
24515040
12.

Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon.

Nguyen HP, Cui K, Zhang S, Fathololoumi S, Mi Z.

Nanotechnology. 2011 Nov 4;22(44):445202. doi: 10.1088/0957-4484/22/44/445202. Epub 2011 Oct 6.

PMID:
21975473
13.

High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.

Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.

Opt Express. 2012 Apr 23;20(9):9999-10003. doi: 10.1364/OE.20.009999.

PMID:
22535092
14.

Evaluation of InGaN/GaN light-emitting diodes of circular geometry.

Wang XH, Fu WY, Lai PT, Choi HW.

Opt Express. 2009 Dec 7;17(25):22311-9. doi: 10.1364/OE.17.022311.

PMID:
20052154
15.

Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics.

Guo W, Zhang M, Bhattacharya P, Heo J.

Nano Lett. 2011 Apr 13;11(4):1434-8. doi: 10.1021/nl103649d. Epub 2011 Mar 2.

PMID:
21366223
16.

Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.

Seo YG, Baik KH, Song H, Son JS, Oh K, Hwang SM.

Opt Express. 2011 Jul 4;19(14):12919-24. doi: 10.1364/OE.19.012919.

PMID:
21747444
17.

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

Zhang ZH, Tan ST, Liu W, Ju Z, Zheng K, Kyaw Z, Ji Y, Hasanov N, Sun XW, Demir HV.

Opt Express. 2013 Feb 25;21(4):4958-69. doi: 10.1364/OE.21.004958. Erratum in: Opt Express. 2013 Jul 29;21(15):17670.

PMID:
23482028
18.

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.

Opt Express. 2011 Jan 17;19(2):1065-71. doi: 10.1364/OE.19.001065.

PMID:
21263645
19.

Vertical InGaN light-emitting diodes with a sapphire-face-up structure.

Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK.

Opt Express. 2012 Jan 2;20(1):A119-24.

PMID:
22379672
20.

The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.

Jang HW, Ryu SW, Yu HK, Lee S, Lee JL.

Nanotechnology. 2010 Jan 15;21(2):025203. doi: 10.1088/0957-4484/21/2/025203. Epub 2009 Dec 3.

PMID:
19955615
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