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Items: 1 to 20 of 217

1.

Quantum confinement and electroluminescence in ultrathin silicon nanowires fabricated by a maskless etching technique.

Irrera A, Artoni P, Iacona F, Pecora EF, Franzò G, Galli M, Fazio B, Boninelli S, Priolo F.

Nanotechnology. 2012 Feb 24;23(7):075204. doi: 10.1088/0957-4484/23/7/075204. Epub 2012 Jan 24.

PMID:
22273546
2.

Temperature dependence and aging effects on silicon nanowires photoluminescence.

Artoni P, Irrera A, Iacona F, Pecora EF, Franzò G, Priolo F.

Opt Express. 2012 Jan 16;20(2):1483-90. doi: 10.1364/OE.20.001483.

PMID:
22274492
3.

Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching.

Irrera A, Artoni P, Fioravanti V, Franzò G, Fazio B, Musumeci P, Boninelli S, Impellizzeri G, Terrasi A, Priolo F, Iacona F.

Nanoscale Res Lett. 2014 Feb 12;9(1):74. doi: 10.1186/1556-276X-9-74.

4.

A route for modulating the diameter of cylindrical silicon nanowires by using thermal self-ordering silver nanoparticles.

Lee SH, Lee TI, Moon KJ, Myoung JM.

ACS Appl Mater Interfaces. 2013 Nov 27;5(22):11777-82. doi: 10.1021/am403454j. Epub 2013 Nov 7.

PMID:
24156659
5.

Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires.

Kim K, Moon T, Kim S.

J Nanosci Nanotechnol. 2011 Jul;11(7):6025-8.

PMID:
22121651
6.

Si/a-Si core/shell nanowires as nonvolatile crossbar switches.

Dong Y, Yu G, McAlpine MC, Lu W, Lieber CM.

Nano Lett. 2008 Feb;8(2):386-91. doi: 10.1021/nl073224p. Epub 2008 Jan 26.

PMID:
18220442
7.

Tunable light emission from quantum-confined excitons in TiSi2-catalyzed silicon nanowires.

Guichard AR, Barsic DN, Sharma S, Kamins TI, Brongersma ML.

Nano Lett. 2006 Sep;6(9):2140-4.

PMID:
16968040
8.

Effect of Ag/Au bilayer assisted etching on the strongly enhanced photoluminescence and visible light photocatalysis by Si nanowire arrays.

Ghosh R, Imakita K, Fujii M, Giri PK.

Phys Chem Chem Phys. 2016 Mar 21;18(11):7715-27. doi: 10.1039/c5cp07161e.

PMID:
26907170
9.

Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred <100> etching directions.

Huang Z, Shimizu T, Senz S, Zhang Z, Zhang X, Lee W, Geyer N, Gösele U.

Nano Lett. 2009 Jul;9(7):2519-25. doi: 10.1021/nl803558n.

PMID:
19480399
10.

Coexistence of 1D and quasi-0D photoluminescence from single silicon nanowires.

Valenta J, Bruhn B, Linnros J.

Nano Lett. 2011 Jul 13;11(7):3003-9. doi: 10.1021/nl201610g. Epub 2011 Jun 28.

PMID:
21711002
11.

Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires.

Ozdemir B, Kulakci M, Turan R, Unalan HE.

Nanotechnology. 2011 Apr 15;22(15):155606. doi: 10.1088/0957-4484/22/15/155606. Epub 2011 Mar 10.

PMID:
21389572
12.

Self-assembled growth and luminescence of crystalline Si/SiOx core-shell nanowires.

Kim S, Kim CO, Shin DH, Hong SH, Kim MC, Kim J, Choi SH, Kim T, Elliman RG, Kim YM.

Nanotechnology. 2010 May 21;21(20):205601. doi: 10.1088/0957-4484/21/20/205601. Epub 2010 Apr 23.

PMID:
20413841
13.

Experimental determination of the absorption cross-section and molar extinction coefficient of CdSe and CdTe nanowires.

Protasenko V, Bacinello D, Kuno M.

J Phys Chem B. 2006 Dec 21;110(50):25322-31.

PMID:
17165978
14.

Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect.

Liu C, Dai L, You LP, Xu WJ, Qin GG.

Nanotechnology. 2008 Nov 19;19(46):465203. doi: 10.1088/0957-4484/19/46/465203. Epub 2008 Oct 21.

PMID:
21836237
15.

New silicon architectures by gold-assisted chemical etching.

Mikhael B, Elise B, Xavier M, Sebastian S, Johann M, Laetitia P.

ACS Appl Mater Interfaces. 2011 Oct;3(10):3866-73. doi: 10.1021/am200948p. Epub 2011 Sep 16.

PMID:
21882843
16.

An ordered Si nanowire with NiSi2 tip arrays as excellent field emitters.

Liu CY, Li WS, Chu LW, Lu MY, Tsai CJ, Chen LJ.

Nanotechnology. 2011 Feb 4;22(5):055603. doi: 10.1088/0957-4484/22/5/055603. Epub 2010 Dec 23.

PMID:
21178255
17.

Field-effect transistors based on silicon nanowire arrays: effect of the good and the bad silicon nanowires.

Wang B, Stelzner T, Dirawi R, Assad O, Shehada N, Christiansen S, Haick H.

ACS Appl Mater Interfaces. 2012 Aug;4(8):4251-8. doi: 10.1021/am300961d. Epub 2012 Aug 1.

PMID:
22817278
18.

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111).

Lockwood DJ, Rowell NL, Benkouider A, Ronda A, Favre L, Berbezier I.

Beilstein J Nanotechnol. 2014 Dec 30;5:2498-504. doi: 10.3762/bjnano.5.259. eCollection 2014.

19.

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.

Habicht S, Zhao QT, Feste SF, Knoll L, Trellenkamp S, Ghyselen B, Mantl S.

Nanotechnology. 2010 Mar 12;21(10):105701. doi: 10.1088/0957-4484/21/10/105701. Epub 2010 Feb 15.

PMID:
20154367
20.

Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structures.

Zhou J, Chen GR, Liu Y, Xu J, Wang T, Wan N, Ma ZY, Li W, Song C, Chen KJ.

Opt Express. 2009 Jan 5;17(1):156-62.

PMID:
19129883
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