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Items: 1 to 20 of 93

1.

Ohm's law survives to the atomic scale.

Weber B, Mahapatra S, Ryu H, Lee S, Fuhrer A, Reusch TC, Thompson DL, Lee WC, Klimeck G, Hollenberg LC, Simmons MY.

Science. 2012 Jan 6;335(6064):64-7. doi: 10.1126/science.1214319.

2.

Issues of nanoelectronics: a possible roadmap.

Wang KL.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):235-66. Review.

PMID:
12908252
3.

Novel top-down wafer-scale fabrication of single crystal silicon nanowires.

Tong HD, Chen S, van der Wiel WG, Carlen ET, van den Berg A.

Nano Lett. 2009 Mar;9(3):1015-22. doi: 10.1021/nl803181x.

PMID:
19199755
4.

Spectroscopy of few-electron single-crystal silicon quantum dots.

Fuechsle M, Mahapatra S, Zwanenburg FA, Friesen M, Eriksson MA, Simmons MY.

Nat Nanotechnol. 2010 Jul;5(7):502-5. doi: 10.1038/nnano.2010.95. Epub 2010 May 23.

PMID:
20495552
5.

Atomistic modeling of metallic nanowires in silicon.

Ryu H, Lee S, Weber B, Mahapatra S, Hollenberg LC, Simmons MY, Klimeck G.

Nanoscale. 2013 Sep 21;5(18):8666-74. doi: 10.1039/c3nr01796f.

PMID:
23897026
6.

A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium.

Scappucci G, Capellini G, Johnston B, Klesse WM, Miwa JA, Simmons MY.

Nano Lett. 2011 Jun 8;11(6):2272-9. doi: 10.1021/nl200449v. Epub 2011 May 10.

PMID:
21553900
7.

Engineering independent electrostatic control of atomic-scale (∼4 nm) silicon double quantum dots.

Weber B, Mahapatra S, Watson TF, Simmons MY.

Nano Lett. 2012 Aug 8;12(8):4001-6. doi: 10.1021/nl3012903. Epub 2012 Jul 12.

PMID:
22686257
8.

Atomic Scale Plasmonic Switch.

Emboras A, Niegemann J, Ma P, Haffner C, Pedersen A, Luisier M, Hafner C, Schimmel T, Leuthold J.

Nano Lett. 2016 Jan 13;16(1):709-14. doi: 10.1021/acs.nanolett.5b04537. Epub 2015 Dec 29.

PMID:
26670551
9.

Progress in silicon-based quantum computing.

Clark RG, Brenner R, Buehler TM, Chan V, Curson NJ, Dzurak AS, Gauja E, Goan HS, Greentree AD, Hallam T, Hamilton AR, Hollenberg LC, Jamieson DN, McCallum JC, Milburn GJ, O'Brien JL, Oberbeck L, Pakes CI, Prawer SD, Reilly DJ, Ruess FJ, Schofield SR, Simmons MY, Stanley FE, Starrett RP, Wellard C, Yang C.

Philos Trans A Math Phys Eng Sci. 2003 Jul 15;361(1808):1451-71.

10.

Independently switchable atomic quantum transistors by reversible contact reconstruction.

Xie FQ, Maul R, Augenstein A, Obermair C, Starikov EB, Schön G, Schimmel T, Wenzel W.

Nano Lett. 2008 Dec;8(12):4493-7. doi: 10.1021/nl802438c.

PMID:
19367974
11.

Silicon nanowire transistors with a channel width of 4 nm fabricated by atomic force microscope nanolithography.

Martinez J, Martínez RV, Garcia R.

Nano Lett. 2008 Nov;8(11):3636-9. doi: 10.1021/nl801599k. Epub 2008 Oct 1.

PMID:
18826289
12.

Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon.

Shamim S, Weber B, Thompson DW, Simmons MY, Ghosh A.

Nano Lett. 2016 Aug 23. [Epub ahead of print]

PMID:
27525390
13.

Field-Induced Nanometer- to Atomic-Scale Manipulation of Silicon Surfaces with the STM.

Lyo IW, Avouris P.

Science. 1991 Jul 12;253(5016):173-6.

PMID:
17779133
14.

Single-shot readout of an electron spin in silicon.

Morello A, Pla JJ, Zwanenburg FA, Chan KW, Tan KY, Huebl H, Möttönen M, Nugroho CD, Yang C, van Donkelaar JA, Alves AD, Jamieson DN, Escott CC, Hollenberg LC, Clark RG, Dzurak AS.

Nature. 2010 Oct 7;467(7316):687-91. doi: 10.1038/nature09392. Epub 2010 Sep 26.

PMID:
20877281
15.

A tight-binding study of single-atom transistors.

Ryu H, Lee S, Fuechsle M, Miwa JA, Mahapatra S, Hollenberg LC, Simmons MY, Klimeck G.

Small. 2015 Jan 21;11(3):374-81. doi: 10.1002/smll.201400724. Epub 2014 Oct 8.

PMID:
25293353
16.

Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon.

Koelling S, Richard O, Bender H, Uematsu M, Schulze A, Zschaetzsch G, Gilbert M, Vandervorst W.

Nano Lett. 2013 Jun 12;13(6):2458-62. doi: 10.1021/nl400447d. Epub 2013 May 21.

PMID:
23675857
17.

Metallic nanowires by full wafer stencil lithography.

Vazquez-Mena O, Villanueva G, Savu V, Sidler K, van den Boogaart MA, Brugger J.

Nano Lett. 2008 Nov;8(11):3675-82. doi: 10.1021/nl801778t. Epub 2008 Sep 26.

PMID:
18817451
18.

Electronic transport on the nanoscale: ballistic transmission and Ohm's law.

Homoth J, Wenderoth M, Druga T, Winking L, Ulbrich RG, Bobisch CA, Weyers B, Bannani A, Zubkov E, Bernhart AM, Kaspers MR, Möller R.

Nano Lett. 2009 Apr;9(4):1588-92. doi: 10.1021/nl803783g.

PMID:
19278211
19.

Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon.

Fuhrer A, Füchsle M, Reusch TC, Weber B, Simmons MY.

Nano Lett. 2009 Feb;9(2):707-10. doi: 10.1021/nl803196f.

PMID:
19119868
20.

Electrochemical properties of columns in capillary electrochromatography. I. Ohm's law, resistivity and field strength.

Henry MP, Ratnayake CK.

J Chromatogr A. 2005 Jun 24;1079(1-2):69-76. Review.

PMID:
16038292
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