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Results: 1 to 20 of 273

Similar articles for PubMed (Select 22149118)

1.

Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors.

Vitiello MS, Coquillat D, Viti L, Ercolani D, Teppe F, Pitanti A, Beltram F, Sorba L, Knap W, Tredicucci A.

Nano Lett. 2012 Jan 11;12(1):96-101. doi: 10.1021/nl2030486. Epub 2011 Dec 12.

PMID:
22149118
2.

Nanowire-based field effect transistors for terahertz detection and imaging systems.

Romeo L, Coquillat D, Pea M, Ercolani D, Beltram F, Sorba L, Knap W, Tredicucci A, Vitiello MS.

Nanotechnology. 2013 May 31;24(21):214005. doi: 10.1088/0957-4484/24/21/214005. Epub 2013 Apr 25.

PMID:
23618953
3.

Room temperature detection of sub-terahertz radiation in double-grating-gate transistors.

Coquillat D, Nadar S, Teppe F, Dyakonova N, Boubanga-Tombet S, Knap W, Nishimura T, Otsuji T, Meziani YM, Tsymbalov GM, Popov VV.

Opt Express. 2010 Mar 15;18(6):6024-32. doi: 10.1364/OE.18.006024.

PMID:
20389622
4.

High electron mobility InAs nanowire field-effect transistors.

Dayeh SA, Aplin DP, Zhou X, Yu PK, Yu ET, Wang D.

Small. 2007 Feb;3(2):326-32.

PMID:
17199246
5.

Fully transparent thin-film transistor devices based on SnO2 nanowires.

Dattoli EN, Wan Q, Guo W, Chen Y, Pan X, Lu W.

Nano Lett. 2007 Aug;7(8):2463-9. Epub 2007 Jun 27.

PMID:
17595151
6.

Wide-band frequency-tunable terahertz and infrared detection with graphene.

Kawano Y.

Nanotechnology. 2013 May 31;24(21):214004. doi: 10.1088/0957-4484/24/21/214004. Epub 2013 Apr 25.

PMID:
23618878
7.

Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

Egard M, Johansson S, Johansson AC, Persson KM, Dey AW, Borg BM, Thelander C, Wernersson LE, Lind E.

Nano Lett. 2010 Mar 10;10(3):809-12. doi: 10.1021/nl903125m.

PMID:
20131812
8.
9.

Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates.

Guo N, Hu WD, Chen XS, Wang L, Lu W.

Opt Express. 2013 Jan 28;21(2):1606-14. doi: 10.1364/OE.21.001606.

PMID:
23389145
10.

Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide.

Rinkiö M, Johansson A, Kotimäki V, Törmä P.

ACS Nano. 2010 Jun 22;4(6):3356-62. doi: 10.1021/nn100208v.

PMID:
20524681
11.

Multifunctional devices and logic gates with undoped silicon nanowires.

Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S.

Nano Lett. 2012 Jun 13;12(6):3074-9. doi: 10.1021/nl300930m. Epub 2012 May 29.

PMID:
22594644
12.

Sensing properties of different classes of gases based on the nanowire-electrode junction barrier modulation.

Singh N, Yan C, Lee PS, Comini E.

Nanoscale. 2011 Apr;3(4):1760-5. doi: 10.1039/c0nr00871k. Epub 2011 Feb 23.

PMID:
21347489
13.

Sensing individual terahertz photons.

Hashiba H, Antonov V, Kulik L, Tzalenchuk A, Komiyama S.

Nanotechnology. 2010 Apr 23;21(16):165203. doi: 10.1088/0957-4484/21/16/165203. Epub 2010 Mar 26.

PMID:
20348600
14.

Tunable p-type conductivity and transport properties of AlN nanowires via Mg doping.

Tang YB, Bo XH, Xu J, Cao YL, Chen ZH, Song HS, Liu CP, Hung TF, Zhang WJ, Cheng HM, Bello I, Lee ST, Lee CS.

ACS Nano. 2011 May 24;5(5):3591-8. doi: 10.1021/nn200963k. Epub 2011 Apr 15.

PMID:
21480640
15.

Nanometer size field effect transistors for terahertz detectors.

Knap W, Rumyantsev S, Vitiello MS, Coquillat D, Blin S, Dyakonova N, Shur M, Teppe F, Tredicucci A, Nagatsuma T.

Nanotechnology. 2013 May 31;24(21):214002. doi: 10.1088/0957-4484/24/21/214002. Epub 2013 Apr 25. Review.

PMID:
23618776
16.

Correlating the nanostructure and electronic properties of InAs nanowires.

Schroer MD, Petta JR.

Nano Lett. 2010 May 12;10(5):1618-22. doi: 10.1021/nl904053j.

PMID:
20384350
17.

InAs nanowire transistors as gas sensor and the response mechanism.

Du J, Liang D, Tang H, Gao XP.

Nano Lett. 2009 Dec;9(12):4348-51. doi: 10.1021/nl902611f.

PMID:
19739664
18.

Absolute self-calibrated room-temperature terahertz powermeter.

Pradere C, Caumes JP, Toutain J, Abraham E, Chassagne B, Batsale JC.

Appl Opt. 2013 Apr 10;52(11):2320-4. doi: 10.1364/AO.52.002320.

PMID:
23670761
19.

Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

Sohn JI, Choi SS, Morris SM, Bendall JS, Coles HJ, Hong WK, Jo G, Lee T, Welland ME.

Nano Lett. 2010 Nov 10;10(11):4316-20. doi: 10.1021/nl1013713.

PMID:
20945844
20.

Nanowire lithography on silicon.

Colli A, Fasoli A, Pisana S, Fu Y, Beecher P, Milne WI, Ferrari AC.

Nano Lett. 2008 May;8(5):1358-62. doi: 10.1021/nl080033t. Epub 2008 Apr 4.

PMID:
18386934
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