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Results: 1 to 20 of 175

Related Citations for PubMed (Select 22071321)

1.

Ge-Si-O phase separation and Ge nanocrystal growth in Ge:SiO(x)/SiO(2) multilayers--a new dc magnetron approach.

Zschintzsch M, Sahle CJ, Borany Jv, Sternemann C, Mücklich A, Nyrow A, Schwamberger A, Tolan M.

Nanotechnology. 2011 Dec 2;22(48):485303. doi: 10.1088/0957-4484/22/48/485303. Epub 2011 Nov 9.

PMID:
22071321
2.

Stacked Ge nanocrystals with ultrathin SiO₂ separation layers.

Zschintzsch M, von Borany J, Jeutter NM, Mücklich A.

Nanotechnology. 2011 Nov 18;22(46):465302. doi: 10.1088/0957-4484/22/46/465302. Epub 2011 Oct 27.

PMID:
22032974
3.

Fabrication of multilayered Ge nanocrystals by magnetron sputtering and annealing.

Gao F, Green MA, Conibeer G, Cho EC, Huang Y, Pere-Wurfl I, Flynn C.

Nanotechnology. 2008 Nov 12;19(45):455611. doi: 10.1088/0957-4484/19/45/455611. Epub 2008 Oct 9.

PMID:
21832788
4.

Influence of hydrogen on thermally induced phase separation in GeO/SiO2 multilayers.

Sahle CJ, Zschintzsch M, Sternemann C, von Borany J, Mücklich A, Nyrow A, Jeutter NM, Wagner R, Frahm R, Tolan M.

Nanotechnology. 2011 Mar 25;22(12):125709. doi: 10.1088/0957-4484/22/12/125709. Epub 2011 Feb 17.

PMID:
21325710
5.

Evolution of vibrational modes of SiO2 during the formation of Ge and Si nanocrystals by ion implantation and magnetron sputtering.

Imer AG, Yerci S, Alagoz AS, Kulakci M, Serincan U, Finstad TG, Turan R.

J Nanosci Nanotechnol. 2010 Jan;10(1):525-31.

PMID:
20352887
6.

Phase transformation in SiOx/SiO₂ multilayers for optoelectronics and microelectronics applications.

Roussel M, Talbot E, Pratibha Nalini R, Gourbilleau F, Pareige P.

Ultramicroscopy. 2013 Sep;132:290-4. doi: 10.1016/j.ultramic.2012.10.013. Epub 2012 Nov 12.

PMID:
23286962
7.

Structural changes in amorphous Ge(x)SiO(y) on the way to nanocrystal formation.

Nyrow A, Sternemann C, Sahle ChJ, Hohl A, Zschintzsch-Dias M, Schwamberger A, Mende K, Brinkmann I, Moretti Sala M, Wagner R, Meier A, Völklein F, Tolan M.

Nanotechnology. 2013 Apr 26;24(16):165701. doi: 10.1088/0957-4484/24/16/165701. Epub 2013 Mar 27.

PMID:
23535465
8.

[Comparative study on photoluminescence from Ge/PS and Ge/SiO2 thin films].

Sun XJ, Ma SY, Wei JJ, Xu XL.

Guang Pu Xue Yu Guang Pu Fen Xi. 2008 Sep;28(9):2033-7. Chinese.

PMID:
19093555
9.

Thermal stability of high-k Si-rich HfO(2) layers grown by RF magnetron sputtering.

Khomenkova L, Portier X, Cardin J, Gourbilleau F.

Nanotechnology. 2010 Jul 16;21(28):285707. doi: 10.1088/0957-4484/21/28/285707. Epub 2010 Jun 28.

PMID:
20585152
10.

The structure and optical properties of ZnO nanocrystals embedded in SiO2 fabricated by radio-frequency sputtering.

Mayer G, Fonin M, Rüdiger U, Schneider R, Gerthsen D, Janssen N, Bratschitsch R.

Nanotechnology. 2009 Feb 18;20(7):075601. doi: 10.1088/0957-4484/20/7/075601. Epub 2009 Jan 26.

PMID:
19417422
11.

Nonthermal plasma synthesized freestanding silicon-germanium alloy nanocrystals.

Pi XD, Kortshagen U.

Nanotechnology. 2009 Jul 22;20(29):295602. doi: 10.1088/0957-4484/20/29/295602. Epub 2009 Jul 1.

PMID:
19567968
12.

The effect of Ge implantation dose on the optical properties of Ge nanocrystals in SiO(2).

Mestanza SN, Rodriguez E, Frateschi NC.

Nanotechnology. 2006 Sep 28;17(18):4548-53. doi: 10.1088/0957-4484/17/18/004. Epub 2006 Aug 22.

PMID:
21727576
13.

Rare earth ions and Ge nanocrystals in SiO(2).

Skov Jensen J, Leervad Pedersen TP, Chevallier J, Bech Nielsen B, Nylandsted Larsen A.

Nanotechnology. 2006 May 28;17(10):2621-4. doi: 10.1088/0957-4484/17/10/029. Epub 2006 Apr 28.

PMID:
21727514
14.

Size-independent low-frequency Raman scattering in Ge-nanocrystal-embedded SiO2 films.

Liu LZ, Wu XL, Gao F, Yang YM, Li TH, Chu PK.

Opt Lett. 2010 Apr 1;35(7):1022-4. doi: 10.1364/OL.35.001022.

PMID:
20364204
15.

The role of the surfaces in the photon absorption in Ge nanoclusters embedded in silica.

Cosentino S, Mirabella S, Miritello M, Nicotra G, Lo Savio R, Simone F, Spinella C, Terrasi A.

Nanoscale Res Lett. 2011 Feb 11;6(1):135. doi: 10.1186/1556-276X-6-135.

16.

Impact of annealing on surface morphology and photoluminescence of self-assembled Ge and Si quantum dots.

Samavati A, Othaman Z, Dabagh S, Ghoshal SK.

J Nanosci Nanotechnol. 2014 Jul;14(7):5266-71.

PMID:
24758014
17.

Interfacial effects on the optical behavior of Ge:ITO and Ge:ZnO nanocomposite films.

Shih GH, Allen CG, Potter BG Jr.

Nanotechnology. 2012 Feb 24;23(7):075203. doi: 10.1088/0957-4484/23/7/075203. Epub 2012 Jan 20.

PMID:
22261039
18.

Nanocavities and germanium nanocrystals produced by Ge ion implantation in fused silica.

Barba D, Martin F, Demarche J, Terwagne G, Ross GG.

Nanotechnology. 2012 Apr 13;23(14):145701. doi: 10.1088/0957-4484/23/14/145701. Epub 2012 Mar 21.

PMID:
22433986
19.

A cost-effective growth of SiO(x) thin films by reactive sputtering: photoluminescence tuning.

Pappas SD, Grammatikopoulos S, Poulopoulos P, Kapaklis V, Delimitis A, Trachylis D, Politis C.

J Nanosci Nanotechnol. 2011 Apr;11(4):3684-7.

PMID:
21776754
20.

Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD.

Vázquez-Valerdi DE, Luna-López JA, Carrillo-López J, García-Salgado G, Benítez-Lara A, Espinosa-Torres ND.

Nanoscale Res Lett. 2014 Aug 21;9(1):422. doi: 10.1186/1556-276X-9-422. eCollection 2014.

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