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Items: 1 to 20 of 145

1.

Transformation of InAs islands to quantum ring structures by metalorganic vapor phase epitaxy.

Aierken A, Hakkarainen T, Riikonen J, Sopanen M.

Nanotechnology. 2008 Jun 18;19(24):245304. doi: 10.1088/0957-4484/19/24/245304. Epub 2008 May 9.

PMID:
21825809
2.

Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.

Guimard D, Ishida M, Bordel D, Li L, Nishioka M, Tanaka Y, Ekawa M, Sudo H, Yamamoto T, Kondo H, Sugawara M, Arakawa Y.

Nanotechnology. 2010 Mar 12;21(10):105604. doi: 10.1088/0957-4484/21/10/105604. Epub 2010 Feb 16.

PMID:
20160334
3.

Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.

Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.

J Nanosci Nanotechnol. 2007 Aug;7(8):2889-93.

PMID:
17685312
4.

Effect of rapid thermal annealing on the electrical properties of GaAs Schottky diodes embedded with self-assembled InAs quantum dots.

Colleaux F, Lee J, Yu BY, Han I, Choi W, Song JD, Ghibaudo G.

J Nanosci Nanotechnol. 2008 Oct;8(10):5558-60.

PMID:
19198498
5.

Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm.

Liu WS, Tseng HL, Kuo PC.

Opt Express. 2014 Aug 11;22(16):18860-9. doi: 10.1364/OE.22.018860.

PMID:
25320972
6.

Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.

Sormunen J, Riikonen J, Mattila M, Tiilikainen J, Sopanen M, Lipsanen H.

Nano Lett. 2005 Aug;5(8):1541-3.

PMID:
16089485
7.

Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates.

Sun MH, Leong ES, Chin AH, Ning CZ, Cirlin GE, Samsonenko YB, Dubrovskii VG, Chuang L, Chang-Hasnain C.

Nanotechnology. 2010 Aug 20;21(33):335705. doi: 10.1088/0957-4484/21/33/335705. Epub 2010 Jul 26.

PMID:
20657047
8.

High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy.

Luo S, Ji HM, Gao F, Xu F, Yang XG, Liang P, Yang T.

Opt Express. 2015 Apr 6;23(7):8383-8. doi: 10.1364/OE.23.008383.

PMID:
25968677
9.

Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate.

Bennour M, Saidi F, Bouzaïene L, Sfaxi L, Maaref H.

J Appl Phys. 2012 Jan 15;111(2):24310-243107. Epub 2012 Jan 25.

10.

Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy.

Liang BL, Wang ZM, Wang XY, Lee JH, Mazur YI, Shih CK, Salamo GJ.

ACS Nano. 2008 Nov 25;2(11):2219-24. doi: 10.1021/nn800224p.

PMID:
19206386
11.

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

He J, Yadavalli K, Zhao Z, Li N, Hao Z, Wang KL, Jacob AP.

Nanotechnology. 2008 Nov 12;19(45):455607. doi: 10.1088/0957-4484/19/45/455607. Epub 2008 Oct 9.

PMID:
21832784
12.

Photoluminescence study of type-II InGaPN/GaAs quantum wells.

Kaewket D, Sanorpim S, Tungasmita S, Katayama R, Onabe K.

J Nanosci Nanotechnol. 2010 Nov;10(11):7154-7.

PMID:
21137886
13.

Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.

Trevisi G, Seravalli L, Frigeri P, Franchi S.

Nanotechnology. 2009 Oct 14;20(41):415607. doi: 10.1088/0957-4484/20/41/415607. Epub 2009 Sep 18.

PMID:
19762951
14.

Growth and characterization of self-assembled InAs/InP quantum dot structures.

Barik S, Tan HH, Wong-Leung J, Jagadish C.

J Nanosci Nanotechnol. 2010 Mar;10(3):1525-36.

PMID:
20355541
15.

Long-wavelength emission InAs quantum dots grown on InGaAs metamorphic buffers.

Wu BP, Wu DH, Xiong YH, Huang SS, Ni HQ, Xu YQ, Niu ZC.

J Nanosci Nanotechnol. 2009 Feb;9(2):1333-6.

PMID:
19441518
16.

Desorption and ripening of low density InAs quantum dots.

Zhan F, Huang SS, Niu ZC, Ni HQ, Xiong YH, Fang ZD, Zhou HY, Luo Y.

J Nanosci Nanotechnol. 2009 Feb;9(2):844-7.

PMID:
19441405
17.

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer.

Utrilla AD, Ulloa JM, Guzman A, Hierro A.

Nanoscale Res Lett. 2014 Jan 17;9(1):36. doi: 10.1186/1556-276X-9-36.

18.

Various Quantum- and Nano-Structures by III-V Droplet Epitaxy on GaAs Substrates.

Lee J, Wang ZhM, Kim E, Kim N, Park Sh, Salamo G.

Nanoscale Res Lett. 2009 Nov 15;5(2):308-14. doi: 10.1007/s11671-009-9481-9.

19.
20.

Tunability of photoluminescence of InAS/GaAs quantum dots by growth pause introduced ripening.

Halder N, Chakrabarti S, Stanley CR.

J Nanosci Nanotechnol. 2008 Dec;8(12):6232-7.

PMID:
19205188
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