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Results: 1 to 20 of 160

1.

Electronic transport in n- and p-type modulation doped Ga(x)In(1-x)N(y)As(1-y)/ GaAs quantum wells.

Sun Y, Balkan N, Aslan M, Lisesivdin SB, Carrere H, Arikan MC, Marie X.

J Phys Condens Matter. 2009 Apr 29;21(17):174210. doi: 10.1088/0953-8984/21/17/174210. Epub 2009 Apr 1.

PMID:
21825414
[PubMed]
2.

An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells.

Sarcan F, Donmez O, Gunes M, Erol A, Arikan MC, Puustinen J, Guina M.

Nanoscale Res Lett. 2012 Sep 25;7(1):529. doi: 10.1186/1556-276X-7-529.

PMID:
23009196
[PubMed]
Free PMC Article
3.

Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures.

Dönmez O, Sarcan F, Erol A, Gunes M, Arikan MC, Puustinen J, Guina M.

Nanoscale Res Lett. 2014 Mar 24;9(1):141. doi: 10.1186/1556-276X-9-141.

PMID:
24661541
[PubMed]
Free PMC Article
4.

The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys.

Donmez O, Gunes M, Erol A, Arikan CM, Balkan N, Schaff WJ.

Nanoscale Res Lett. 2012 Aug 31;7(1):490. doi: 10.1186/1556-276X-7-490.

PMID:
22937902
[PubMed]
Free PMC Article
5.

Photoluminescence study of type-II InGaPN/GaAs quantum wells.

Kaewket D, Sanorpim S, Tungasmita S, Katayama R, Onabe K.

J Nanosci Nanotechnol. 2010 Nov;10(11):7154-7.

PMID:
21137886
[PubMed]
6.

Coupling-barrier and non-parabolicity effects on the conduction electron cyclotron effective mass and Landé [Formula: see text] factor in GaAs double quantum wells.

Darío Perea J, Mejía-Salazar JR, Porras-Montenegro N.

J Phys Condens Matter. 2011 Feb 16;23(6):065303. doi: 10.1088/0953-8984/23/6/065303. Epub 2011 Jan 26.

PMID:
21406924
[PubMed]
7.

Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells.

Khalil HM, Sun Y, Balkan N, Amann A, Sopanen M.

Nanoscale Res Lett. 2011 Mar 2;6(1):191. doi: 10.1186/1556-276X-6-191.

PMID:
21711766
[PubMed]
Free PMC Article
8.

Effects of confinement on the electron-phonon interaction in Al(0.18)Ga(0.82)As/GaAs quantum wells.

Morais RR, Dias IF, da Silva MA, Cesar DF, Duarte JL, Lourenço SA, Laureto E, da Silva EC, Quivy AA.

J Phys Condens Matter. 2009 Apr 15;21(15):155601. doi: 10.1088/0953-8984/21/15/155601. Epub 2009 Mar 17.

PMID:
21825369
[PubMed]
9.

Effects of hydrostatic pressure on the electron [Formula: see text] factor and g-factor anisotropy in GaAs-(Ga, Al)As quantum wells under magnetic fields.

Porras-Montenegro N, Duque CA, Reyes-Gómez E, Oliveira LE.

J Phys Condens Matter. 2008 Nov 19;20(46):465220. doi: 10.1088/0953-8984/20/46/465220. Epub 2008 Oct 27.

PMID:
21693858
[PubMed]
10.

Growth, structural, and optical properties of self-assembled (In,Ga)as quantum posts on GaAs.

He J, Krenner HJ, Pryor C, Zhang JP, Wu Y, Allen DG, Morris CM, Sherwin MS, Petroff PM.

Nano Lett. 2007 Mar;7(3):802-6. Epub 2007 Feb 28.

PMID:
17326694
[PubMed]
11.

Magnetotunneling spectroscopy of dilute Ga(AsN) quantum wells.

Endicott J, Patanè A, Ibáñez J, Eaves L, Bissiri M, Hopkinson M, Airey R, Hill G.

Phys Rev Lett. 2003 Sep 19;91(12):126802. Epub 2003 Sep 16.

PMID:
14525385
[PubMed]
12.

Symmetric band structures and asymmetric ultrafast electron and hole relaxations in silicon and germanium quantum dots: time-domain ab initio simulation.

Hyeon-Deuk K, Madrid AB, Prezhdo OV.

Dalton Trans. 2009 Dec 7;(45):10069-77. doi: 10.1039/b909267f. Epub 2009 Aug 27.

PMID:
19904435
[PubMed]
13.

Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells.

Lourenço SA, da Silva MA, Dias IF, Duarte JL, Harmand JC.

J Phys Condens Matter. 2011 Aug 17;23(32):325801. doi: 10.1088/0953-8984/23/32/325801. Epub 2011 Jul 25.

PMID:
21785181
[PubMed]
14.

Quantum confinement and magnetic-field effects on the electron g factor in GaAs-(Ga, Al)As cylindrical quantum dots.

Mejía-Salazar JR, Porras-Montenegro N, Oliveira LE.

J Phys Condens Matter. 2009 Nov 11;21(45):455302. doi: 10.1088/0953-8984/21/45/455302. Epub 2009 Oct 21.

PMID:
21694007
[PubMed]
15.

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well.

Tatebayashi J, Liang BL, Laghumavarapu RB, Bussian DA, Htoon H, Klimov V, Balakrishnan G, Dawson LR, Huffaker DL.

Nanotechnology. 2008 Jul 23;19(29):295704. doi: 10.1088/0957-4484/19/29/295704. Epub 2008 Jun 10.

PMID:
21730609
[PubMed]
16.

Theory for n-type doped, tensile-strained Ge-Si(x)Ge(y)Sn1-x-y quantum-well lasers at telecom wavelength.

Chang GE, Chang SW, Chuang SL.

Opt Express. 2009 Jul 6;17(14):11246-58.

PMID:
19582037
[PubMed]
17.

A delta-doped quantum well system with additional modulation doping.

Luo DS, Lin LH, Su YC, Wang YT, Peng ZF, Lo ST, Chen KY, Chang YH, Wu JY, Lin Y, Lin SD, Chen JC, Huang CF, Liang CT.

Nanoscale Res Lett. 2011 Feb 14;6(1):139. doi: 10.1186/1556-276X-6-139.

PMID:
21711656
[PubMed]
Free PMC Article
18.

Measurement of electron-hole friction in an n-doped GaAs/AlGaAs quantum well using optical transient grating spectroscopy.

Yang L, Koralek JD, Orenstein J, Tibbetts DR, Reno JL, Lilly MP.

Phys Rev Lett. 2011 Jun 17;106(24):247401. Epub 2011 Jun 13.

PMID:
21770596
[PubMed]
19.

Spin coherence of holes in GaAs/(Al,Ga)As quantum wells.

Syperek M, Yakovlev DR, Greilich A, Misiewicz J, Bayer M, Reuter D, Wieck AD.

Phys Rev Lett. 2007 Nov 2;99(18):187401. Epub 2007 Oct 29.

PMID:
17995436
[PubMed]
20.

A study of photomodulated reflectance on staircase-like, n-doped GaAs/AlxGa1-xAs quantum well structures.

Donmez O, Nutku F, Erol A, Arikan CM, Ergun Y.

Nanoscale Res Lett. 2012 Nov 12;7(1):622. doi: 10.1186/1556-276X-7-622.

PMID:
23146126
[PubMed]
Free PMC Article

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