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Results: 1 to 20 of 130

Similar articles for PubMed (Select 21817514)

1.

The effect of nitrogen pressure during molecular beam epitaxy growth of InAsN quantum dots.

Fälth JF, Yoon SF, Tan KH, Fitzgerald EA.

Nanotechnology. 2008 Jan 30;19(4):045608. doi: 10.1088/0957-4484/19/04/045608. Epub 2008 Jan 4.

PMID:
21817514
2.

The influence of substrate temperature on InAsN quantum dots grown by molecular beam epitaxy.

Fälth JF, Yoon SF, Fitzgerald EA.

Nanotechnology. 2008 Nov 12;19(45):455606. doi: 10.1088/0957-4484/19/45/455606. Epub 2008 Oct 9.

PMID:
21832783
3.

Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence.

Hsu CC, Hsu RQ, Wu YH, Chi TW, Chiang CH, Chen JF, Chang MN.

Ultramicroscopy. 2008 Oct;108(11):1495-9. doi: 10.1016/j.ultramic.2008.04.098. Epub 2008 Jun 27.

PMID:
18768262
4.

Optical properties and carrier dynamics of self-assembled GaN/Al(0.11)Ga(0.89)N quantum dots.

Ke WC, Fu CP, Huang CC, Ku CS, Lee L, Chen CY, Tsai WC, Chen WK, Lee MC, Chou WC, Lin WJ, Cheng YC.

Nanotechnology. 2006 May 28;17(10):2609-13. doi: 10.1088/0957-4484/17/10/027. Epub 2006 Apr 28.

PMID:
21727512
5.

[Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling].

Jia GZ, Yao JH, Zhang CL, Shu Q, Liu RB, Ye XL, Wang ZG.

Guang Pu Xue Yu Guang Pu Fen Xi. 2007 Nov;27(11):2178-81. Chinese.

PMID:
18260388
6.

Self-assembled growth of GaAs anti quantum dots in InAs matrix by migration enhanced molecular beam epitaxy.

Lee EH, Song JD, Kim SY, Han IK, Chang SK, Lee JI.

J Nanosci Nanotechnol. 2012 Feb;12(2):1480-2.

PMID:
22629983
7.

InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Bru-Chevallier C, El Akra A, Pelloux-Gervais D, Dumont H, Canut B, Chauvin N, Regreny P, Gendry M, Patriarche G, Jancu JM, Even J, Noe P, Calvo V, Salem B.

J Nanosci Nanotechnol. 2011 Oct;11(10):9153-9.

PMID:
22400316
8.

The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination.

Ko KM, Seo JH, Kim DE, Lee ST, Noh YK, Kim MD, Oh JE.

Nanotechnology. 2009 Jun 3;20(22):225201. doi: 10.1088/0957-4484/20/22/225201. Epub 2009 May 12.

PMID:
19433876
9.

Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy.

Morales-Cortés H, Mejía-García C, Méndez-García VH, Vázquez-Cortés D, Rojas-Ramírez JS, Contreras-Guerrero R, Ramírez-López M, Martínez-Velis I, López-López M.

Nanotechnology. 2010 Apr 2;21(13):134012. doi: 10.1088/0957-4484/21/13/134012. Epub 2010 Mar 8.

PMID:
20208110
10.

Lateral patterning of multilayer InAs/GaAs(001) quantum dot structures by in vacuo focused ion beam.

Martin AJ, Saucer TW, Rodriguez GV, Sih V, Millunchick JM.

Nanotechnology. 2012 Apr 6;23(13):135401. doi: 10.1088/0957-4484/23/13/135401. Epub 2012 Mar 16.

PMID:
22421025
11.

The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy.

Balzarotti A.

Nanotechnology. 2008 Dec 17;19(50):505701. doi: 10.1088/0957-4484/19/50/505701. Epub 2008 Nov 25.

PMID:
19942778
12.

Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique.

Dhawan T, Tyagi R, Bag R, Singh M, Mohan P, Haldar T, Murlidharan R, Tandon R.

Nanoscale Res Lett. 2009 Sep 19;5(1):31-7. doi: 10.1007/s11671-009-9439-y.

13.
14.

Growth and characterization of InP ringlike quantum-dot molecules grown by solid-source molecular beam epitaxy.

Jevasuwan W, Boonpeng P, Panyakeow S, Ratanathammaphan S.

J Nanosci Nanotechnol. 2010 Nov;10(11):7291-4.

PMID:
21137917
15.

Nucleation sequence of InAs quantum dots on cross-hatch patterns.

Kanjanachuchai S, Limwongse T.

J Nanosci Nanotechnol. 2011 Dec;11(12):10787-91.

PMID:
22408996
16.

The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100).

Hakkarainen TV, Polojärvi V, Schramm A, Tommila J, Guina M.

Nanotechnology. 2012 Mar 23;23(11):115702. doi: 10.1088/0957-4484/23/11/115702. Epub 2012 Feb 28.

PMID:
22369789
17.

Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.

Trevisi G, Seravalli L, Frigeri P, Franchi S.

Nanotechnology. 2009 Oct 14;20(41):415607. doi: 10.1088/0957-4484/20/41/415607. Epub 2009 Sep 18.

PMID:
19762951
18.

Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures.

Mamutin VV, Egorov AY, Kryzhanovskaya NV.

Nanotechnology. 2008 Nov 5;19(44):445715. doi: 10.1088/0957-4484/19/44/445715. Epub 2008 Oct 2.

PMID:
21832756
19.

Effect of rapid thermal annealing on the electrical properties of GaAs Schottky diodes embedded with self-assembled InAs quantum dots.

Colleaux F, Lee J, Yu BY, Han I, Choi W, Song JD, Ghibaudo G.

J Nanosci Nanotechnol. 2008 Oct;8(10):5558-60.

PMID:
19198498
20.

First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth.

Yin Z, Tang X, Zhang J, Deny S, Teng J, Du A, Chin MK.

Nanotechnology. 2008 Feb 27;19(8):085603. doi: 10.1088/0957-4484/19/8/085603. Epub 2008 Feb 1.

PMID:
21730727
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