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Results: 1 to 20 of 176

1.

Temperature and excitation density dependent photoluminescence of sputtering-induced GaAs/AlGaAs quantum dots.

Wang Y, Yoon SF, Liu CY, Ngo CY, Ahn J.

Nanotechnology. 2008 Jan 9;19(1):015602. doi: 10.1088/0957-4484/19/01/015602. Epub 2007 Nov 29.

PMID:
21730537
[PubMed]
2.

Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.

Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.

J Nanosci Nanotechnol. 2007 Aug;7(8):2889-93.

PMID:
17685312
[PubMed - indexed for MEDLINE]
3.

Mechanism of photoluminescence quenching of InGaAs/GaAs quantum dots resulting from nanoprobe indentation.

Xu L, Arai Y, Ozasa K, Kakoi H, Liang YH, Araki W.

J Nanosci Nanotechnol. 2011 Jan;11(1):106-14.

PMID:
21446413
[PubMed]
4.

Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure.

Mazur YI, Dorogan VG, Schmidbauer M, Tarasov GG, Johnson SR, Lu X, Yu SQ, Wang ZhM, Tiedje T, Salamo GJ.

Nanotechnology. 2011 Sep 16;22(37):375703. doi: 10.1088/0957-4484/22/37/375703. Epub 2011 Aug 19.

PMID:
21852736
[PubMed]
5.

Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates.

Skiba-Szymanska J, Jamil A, Farrer I, Ward MB, Nicoll CA, Ellis DJ, Griffiths JP, Anderson D, Jones GA, Ritchie DA, Shields AJ.

Nanotechnology. 2011 Feb 11;22(6):065302. doi: 10.1088/0957-4484/22/6/065302. Epub 2011 Jan 7.

PMID:
21212488
[PubMed]
6.

InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation.

Wong PS, Liang B, Huffaker DL.

J Nanosci Nanotechnol. 2010 Mar;10(3):1537-50.

PMID:
20355542
[PubMed]
7.

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers.

Loeber TH, Hoffmann D, Fouckhardt H.

Beilstein J Nanotechnol. 2011;2:333-8. doi: 10.3762/bjnano.2.39. Epub 2011 Jun 30.

PMID:
21977447
[PubMed]
Free PMC Article
8.

Growth and characterization of self-assembled InAs/InP quantum dot structures.

Barik S, Tan HH, Wong-Leung J, Jagadish C.

J Nanosci Nanotechnol. 2010 Mar;10(3):1525-36.

PMID:
20355541
[PubMed]
9.

Comparative study on InAs/InGaAs dots-in-a-well structure grown on GaAs(311) B and (100) substrates.

Wang L, Li M, Xiong M, Wang W, Gao H, Zhao L.

J Nanosci Nanotechnol. 2010 Nov;10(11):7359-61.

PMID:
21137934
[PubMed]
10.

Vertically stacked quantum dot pairs fabricated by nanohole filling.

Sonnenberg D, Küster A, Graf A, Heyn Ch, Hansen W.

Nanotechnology. 2014 May 30;25(21):215602. doi: 10.1088/0957-4484/25/21/215602. Epub 2014 May 2.

PMID:
24784358
[PubMed - in process]
11.

Quenching of photoluminescence in conjugates of quantum dots and single-walled carbon nanotube.

Biju V, Itoh T, Baba Y, Ishikawa M.

J Phys Chem B. 2006 Dec 28;110(51):26068-74.

PMID:
17181259
[PubMed - indexed for MEDLINE]
12.

Substrate temperature dependent surface morphology and photoluminescence of germanium quantum dots grown by radio frequency magnetron sputtering.

Samavati A, Othaman Z, Ghoshal SK, Dousti MR, Kadir MR.

Int J Mol Sci. 2012 Oct 9;13(10):12880-9. doi: 10.3390/ijms131012880.

PMID:
23202927
[PubMed - in process]
Free PMC Article
13.

Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition.

He J, Reyner CJ, Liang BL, Nunna K, Huffaker DL, Pavarelli N, Gradkowski K, Ochalski TJ, Huyet G, Dorogan VG, Mazur YI, Salamo GJ.

Nano Lett. 2010 Aug 11;10(8):3052-6. doi: 10.1021/nl102237n.

PMID:
20698619
[PubMed]
14.

Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well.

Yang L, Motohisa J, Tomioka K, Takeda J, Fukui T, Geng MM, Jia LX, Zhang L, Liu YL.

Nanotechnology. 2008 Jul 9;19(27):275304. doi: 10.1088/0957-4484/19/27/275304. Epub 2008 May 27.

PMID:
21828700
[PubMed]
15.

InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.

Fu Y, Wang SM, Ferdos F, Sadeghi M, Larsson A.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):421-6.

PMID:
12908273
[PubMed - indexed for MEDLINE]
16.

Site-controlled lateral arrangements of InAs quantum dots grown on GaAs(001) patterned substrates by atomic force microscopy local oxidation nanolithography.

Martín-Sánchez J, Alonso-González P, Herranz J, González Y, González L.

Nanotechnology. 2009 Mar 25;20(12):125302. doi: 10.1088/0957-4484/20/12/125302. Epub 2009 Mar 3.

PMID:
19420463
[PubMed]
17.

Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires.

Gong Z, Niu Z, Fang Z.

Nanotechnology. 2006 Feb 28;17(4):1140-5. doi: 10.1088/0957-4484/17/4/049. Epub 2006 Feb 2.

PMID:
21727394
[PubMed]
18.

Long-wavelength emission InAs quantum dots grown on InGaAs metamorphic buffers.

Wu BP, Wu DH, Xiong YH, Huang SS, Ni HQ, Xu YQ, Niu ZC.

J Nanosci Nanotechnol. 2009 Feb;9(2):1333-6.

PMID:
19441518
[PubMed]
19.

GaSb/GaAs type-II quantum dots grown by droplet epitaxy.

Liang B, Lin A, Pavarelli N, Reyner C, Tatebayashi J, Nunna K, He J, Ochalski TJ, Huyet G, Huffaker DL.

Nanotechnology. 2009 Nov 11;20(45):455604. doi: 10.1088/0957-4484/20/45/455604. Epub 2009 Oct 16.

PMID:
19834245
[PubMed]
20.

Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy.

Mano T, Abbarchi M, Kuroda T, Mastrandrea CA, Vinattieri A, Sanguinetti S, Sakoda K, Gurioli M.

Nanotechnology. 2009 Sep 30;20(39):395601. doi: 10.1088/0957-4484/20/39/395601. Epub 2009 Sep 2.

PMID:
19724114
[PubMed]

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