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Results: 1 to 20 of 114

1.

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC.

Frazzetto A, Giannazzo F, Lo Nigro R, Di Franco S, Bongiorno C, Saggio M, Zanetti E, Raineri V, Roccaforte F.

Nanoscale Res Lett. 2011 Feb 21;6(1):158. doi: 10.1186/1556-276X-6-158.

PMID:
21711667
[PubMed]
Free PMC Article
2.

Structural and electrical characterization of ohmic contacts to graphitized silicon carbide.

Maneshian MH, Lin MT, Diercks D, Shepherd ND.

Nanotechnology. 2009 Dec 9;20(49):495703. doi: 10.1088/0957-4484/20/49/495703. Epub 2009 Nov 6.

PMID:
19893156
[PubMed]
3.

Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires.

Motayed A, Bonevich JE, Krylyuk S, Davydov AV, Aluri G, Rao MV.

Nanotechnology. 2011 Feb 18;22(7):075206. doi: 10.1088/0957-4484/22/7/075206. Epub 2011 Jan 14.

PMID:
21233538
[PubMed]
4.

Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors.

Jang CO, Kim TH, Lee SY, Kim DJ, Lee SK.

Nanotechnology. 2008 Aug 27;19(34):345203. doi: 10.1088/0957-4484/19/34/345203. Epub 2008 Jul 15.

PMID:
21730641
[PubMed]
5.

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces.

Eriksson J, Roccaforte F, Reshanov S, Leone S, Giannazzo F, Lonigro R, Fiorenza P, Raineri V.

Nanoscale Res Lett. 2011 Feb 7;6(1):120. doi: 10.1186/1556-276X-6-120.

PMID:
21711619
[PubMed]
Free PMC Article
6.

Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

Wang C, Kim NY.

Nanoscale Res Lett. 2012 Feb 7;7(1):107. doi: 10.1186/1556-276X-7-107.

PMID:
22313812
[PubMed]
Free PMC Article
7.

Interfacial reactions of nano-structured Cu-doped indium oxide/indium tin oxide ohmic contacts to p-GaN.

Yoon YJ, Chae SW, Kim BK, Park MJ, Kwak JS.

J Nanosci Nanotechnol. 2010 May;10(5):3254-9.

PMID:
20358934
[PubMed]
8.

Highly reliable Ti-based ohmic contact to N-polar n-type GaN for vertical-geometry light-emitting diodes by using a Ta barrier layer.

Park JS, Han J, Seong TY.

Opt Express. 2014 May 5;22 Suppl 3:A759-64. doi: 10.1364/OE.22.00A759.

PMID:
24922383
[PubMed - in process]
9.

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires.

Herrero AM, Blanchard PT, Sanders A, Brubaker MD, Sanford NA, Roshko A, Bertness KA.

Nanotechnology. 2012 Sep 14;23(36):365203. doi: 10.1088/0957-4484/23/36/365203. Epub 2012 Aug 21.

PMID:
22910019
[PubMed]
10.

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001).

Vecchio C, Sonde S, Bongiorno C, Rambach M, Yakimova R, Raineri V, Giannazzo F.

Nanoscale Res Lett. 2011 Mar 29;6(1):269. doi: 10.1186/1556-276X-6-269.

PMID:
21711803
[PubMed]
Free PMC Article
11.

Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy.

Bright AN, Sharma N, Humphreys CJ.

J Electron Microsc (Tokyo). 2001;50(6):489-95.

PMID:
11918415
[PubMed]
12.

Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC.

Kang MS, Ahn JJ, Moon KS, Koo SM.

Nanoscale Res Lett. 2012 Jan 13;7(1):75. doi: 10.1186/1556-276X-7-75.

PMID:
22244310
[PubMed]
Free PMC Article
13.

Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers.

Łaszcz A, Czerwinski A, Ratajczak J, Szerling A, Phillipp F, Van Aken PA, Katcki J.

J Microsc. 2010 Mar;237(3):347-51. doi: 10.1111/j.1365-2818.2009.03258.x.

PMID:
20500394
[PubMed]
14.

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments.

Fiorenza P, Giannazzo F, Swanson LK, Frazzetto A, Lorenti S, Alessandrino MS, Roccaforte F.

Beilstein J Nanotechnol. 2013 Apr 8;4:249-54. doi: 10.3762/bjnano.4.26. Print 2013.

PMID:
23616945
[PubMed]
Free PMC Article
15.

Novel SiOC nanocomposites for high-yield preparation of ultra-large-scale SiC nanowires.

Zhang X, Huang X, Wen G, Geng X, Zhu J, Zhang T, Bai H.

Nanotechnology. 2010 Sep 24;21(38):385601. doi: 10.1088/0957-4484/21/38/385601. Epub 2010 Aug 26.

PMID:
20739745
[PubMed]
16.

Interface observation in Au/Ni/p-GaN studied by HREM and energy-filtering TEM.

Lim SH, Ra TY, Kim WY.

J Electron Microsc (Tokyo). 2003;52(5):459-64.

PMID:
14700077
[PubMed]
17.

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.

Fontserè A, Pérez-Tomás A, Placidi M, Llobet J, Baron N, Chenot S, Cordier Y, Moreno JC, Jennings MR, Gammon PM, Fisher CA, Iglesias V, Porti M, Bayerl A, Lanza M, Nafría M.

Nanotechnology. 2012 Oct 5;23(39):395204. doi: 10.1088/0957-4484/23/39/395204. Epub 2012 Sep 12.

PMID:
22971927
[PubMed]
18.

Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide.

Ahn JJ, Jo YD, Kim SC, Lee JH, Koo SM.

Nanoscale Res Lett. 2011 Mar 18;6(1):235. doi: 10.1186/1556-276X-6-235.

PMID:
21711752
[PubMed]
Free PMC Article
19.

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization.

Greco G, Giannazzo F, Frazzetto A, Raineri V, Roccaforte F.

Nanoscale Res Lett. 2011 Feb 11;6(1):132. doi: 10.1186/1556-276X-6-132.

PMID:
21711655
[PubMed]
Free PMC Article
20.

Diamond-metal contacts: interface barriers and real-time characterization.

Evans DA, Roberts OR, Williams GT, Vearey-Roberts AR, Bain F, Evans S, Langstaff DP, Twitchen DJ.

J Phys Condens Matter. 2009 Sep 9;21(36):364223. doi: 10.1088/0953-8984/21/36/364223. Epub 2009 Aug 19.

PMID:
21832329
[PubMed]

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