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Items: 1 to 20 of 197

1.

Spin effects in InAs self-assembled quantum dots.

Dos Santos EC, Gobato YG, Brasil MJ, Taylor DA, Henini M.

Nanoscale Res Lett. 2011 Feb 3;6(1):115. doi: 10.1186/1556-276X-6-115.

2.

Circular polarization in a non-magnetic resonant tunneling device.

Dos Santos LF, Gobato YG, Teodoro MD, Lopez-Richard V, Marques GE, Brasil MJ, Orlita M, Kunc J, Maude DK, Henini M, Airey RJ.

Nanoscale Res Lett. 2011 Jan 25;6(1):101. doi: 10.1186/1556-276X-6-101.

3.

Spin polarization of neutral excitons in quantum dots: the role of the carrier collection area.

Moskalenko E, Larsson A, Holtz PO.

Nanotechnology. 2010 Aug 27;21(34):345401. doi: 10.1088/0957-4484/21/34/345401. Epub 2010 Jul 30.

PMID:
20671363
4.

Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots.

Shamirzaev TS, Abramkin DS, Nenashev AV, Zhuravlev KS, Trojánek F, Dzurnák B, Malý P.

Nanotechnology. 2010 Apr 16;21(15):155703. doi: 10.1088/0957-4484/21/15/155703. Epub 2010 Mar 23.

PMID:
20332562
5.

Effect of growth temperature and quantum structure on InAs/GaAs quantum dot solar cell.

Park MH, Kim HS, Park SJ, Song JD, Kim SH, Lee YJ, Choi WJ, Park JH.

J Nanosci Nanotechnol. 2014 Apr;14(4):2955-9.

PMID:
24734716
6.

Quantum dots for terahertz generation.

Liu HC, Aslan B, Gupta JA, Wasilewski ZR, Aers GC, Springthorpe AJ, Buchanan M.

J Phys Condens Matter. 2008 Sep 24;20(38):384211. doi: 10.1088/0953-8984/20/38/384211. Epub 2008 Aug 21.

PMID:
21693819
7.

Optical imaging of electrical carrier injection into individual InAs quantum dots.

Baumgartner A, Stock E, Patanè A, Eaves L, Henini M, Bimberg D.

Phys Rev Lett. 2010 Dec 17;105(25):257401. Epub 2010 Dec 13.

PMID:
21231625
8.

In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.

Li MF, Yu Y, He JF, Wang LJ, Zhu Y, Shang XJ, Ni HQ, Niu ZC.

Nanoscale Res Lett. 2013 Feb 18;8(1):86. doi: 10.1186/1556-276X-8-86.

9.

Carrier transport investigation in short-wavelength InAs/AlGaAs quantum dots.

Monte AF, de Sales FV, Morais PC.

J Phys Condens Matter. 2009 Jan 14;21(2):025302. doi: 10.1088/0953-8984/21/2/025302. Epub 2008 Dec 9.

PMID:
21813972
10.

[Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling].

Jia GZ, Yao JH, Zhang CL, Shu Q, Liu RB, Ye XL, Wang ZG.

Guang Pu Xue Yu Guang Pu Fen Xi. 2007 Nov;27(11):2178-81. Chinese.

PMID:
18260388
11.

InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation.

Wong PS, Liang B, Huffaker DL.

J Nanosci Nanotechnol. 2010 Mar;10(3):1537-50.

PMID:
20355542
12.

Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode.

Tian H, Wang L, Shi Z, Gao H, Zhang S, Wang W, Chen H.

Nanoscale Res Lett. 2012 Feb 14;7(1):128. doi: 10.1186/1556-276X-7-128.

13.

Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: the influence of thermal annealing.

Chen JF, Yu CC, Yang CH.

Nanotechnology. 2008 Dec 10;19(49):495201. doi: 10.1088/0957-4484/19/49/495201. Epub 2008 Nov 18.

PMID:
21730663
14.

Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique.

Dhawan T, Tyagi R, Bag R, Singh M, Mohan P, Haldar T, Murlidharan R, Tandon R.

Nanoscale Res Lett. 2009 Sep 19;5(1):31-7. doi: 10.1007/s11671-009-9439-y.

15.

The Hanle effect and electron spin polarization in InAs/GaAs quantum dots up to room temperature.

Beyer J, Buyanova IA, Suraprapapich S, Tu CW, Chen WM.

Nanotechnology. 2012 Apr 6;23(13):135705. doi: 10.1088/0957-4484/23/13/135705. Epub 2012 Mar 16.

PMID:
22421164
16.

Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.

Guimard D, Ishida M, Bordel D, Li L, Nishioka M, Tanaka Y, Ekawa M, Sudo H, Yamamoto T, Kondo H, Sugawara M, Arakawa Y.

Nanotechnology. 2010 Mar 12;21(10):105604. doi: 10.1088/0957-4484/21/10/105604. Epub 2010 Feb 16.

PMID:
20160334
17.

InAs/GaAsSb quantum dot solar cells.

Hatch S, Wu J, Sablon K, Lam P, Tang M, Jiang Q, Liu H.

Opt Express. 2014 May 5;22 Suppl 3:A679-85. doi: 10.1364/OE.22.00A679.

PMID:
24922376
18.

Site-controlled self-assembled InAs quantum dots grown on GaAs substrates.

Lin SY, Tseng CC, Chung TH, Liao WH, Chen SH, Chyi JI.

Nanotechnology. 2010 Jul 23;21(29):295304. doi: 10.1088/0957-4484/21/29/295304. Epub 2010 Jul 5.

PMID:
20601753
19.

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure.

Zhou X, Chen Y, Xu B.

Nanoscale Res Lett. 2011 Apr 8;6(1):317. doi: 10.1186/1556-276X-6-317.

20.

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well.

Tatebayashi J, Liang BL, Laghumavarapu RB, Bussian DA, Htoon H, Klimov V, Balakrishnan G, Dawson LR, Huffaker DL.

Nanotechnology. 2008 Jul 23;19(29):295704. doi: 10.1088/0957-4484/19/29/295704. Epub 2008 Jun 10.

PMID:
21730609
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