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Results: 1 to 20 of 134

1.

GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation.

Chaqmaqchee FA, Mazzucato S, Oduncuoglu M, Balkan N, Sun Y, Gunes M, Hugues M, Hopkinson M.

Nanoscale Res Lett. 2011 Jan 27;6(1):104. doi: 10.1186/1556-276X-6-104.

PMID:
21711630
[PubMed]
Free PMC Article
2.

Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications.

Chaqmaqchee FA, Balkan N.

Nanoscale Res Lett. 2012 Sep 25;7(1):526. doi: 10.1186/1556-276X-7-526.

PMID:
23009105
[PubMed]
Free PMC Article
3.

Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation.

Chaqmaqchee FA, Balkan N, Herrero JM.

Nanoscale Res Lett. 2012 Sep 25;7(1):525. doi: 10.1186/1556-276X-7-525.

PMID:
23009076
[PubMed]
Free PMC Article
4.

Ga0.35In0.65 N0.02As0.08/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μm.

Chaqmaqchee FA, Balkan N.

Nanoscale Res Lett. 2014 Jan 17;9(1):37. doi: 10.1186/1556-276X-9-37.

PMID:
24438583
[PubMed]
Free PMC Article
5.

[Broad-area vertical cavity semiconductor optical amplifiers].

Sun CL, Liang XM, Qin L, Jia LH, Ning YQ, Wang LJ.

Guang Pu Xue Yu Guang Pu Fen Xi. 2010 May;30(5):1413-6. Chinese.

PMID:
20672645
[PubMed - in process]
6.

Observation of bistability in a Vertical-Cavity Semiconductor Optical Amplifier (VCSOA).

Wen P, Sanchez M, Gross M, Esener S.

Opt Express. 2002 Nov 4;10(22):1273-8.

PMID:
19451988
[PubMed]
7.

Slow-light in a vertical-cavity semiconductor optical amplifier.

Laurand N, Calvez S, Dawson MD, Kelly AE.

Opt Express. 2006 Jul 24;14(15):6858-63.

PMID:
19516868
[PubMed]
8.

Optical bistability in vertical-cavity semiconductor optical amplifiers.

Wen P, Sanchez M, Gross M, Esener SC.

Appl Opt. 2006 Sep 1;45(25):6349-57.

PMID:
16912770
[PubMed]
9.

Cascadable all-optical inverter based on a nonlinear vertical-cavity semiconductor optical amplifier.

Zhang H, Wen P, Esener S.

Opt Lett. 2007 Jul 1;32(13):1884-6.

PMID:
17603602
[PubMed]
10.

Observation of wavelength and multiple bistabilities in 850nm Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs).

Zhang H, Gauss V, Wen P, Esener S.

Opt Express. 2007 Sep 3;15(18):11723-30.

PMID:
19547533
[PubMed]
11.

Polarization anisotropy in vertical-cavity semiconductor optical amplifiers.

Sánchez M, Wen P, Gross M, Esener S.

Opt Lett. 2004 Aug 15;29(16):1888-90.

PMID:
15357349
[PubMed]
12.

All-optical flip-flop based on vertical cavity semiconductor optical amplifiers.

Song D, Gauss V, Zhang H, Gross M, Wen P, Esener S.

Opt Lett. 2007 Oct 15;32(20):2969-71.

PMID:
17938669
[PubMed]
13.

Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures.

Khalil HM, Royall B, Mazzucato S, Balkan N.

Nanoscale Res Lett. 2012 Sep 28;7(1):539. doi: 10.1186/1556-276X-7-539.

PMID:
23021540
[PubMed]
Free PMC Article
14.

Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells.

Khalil HM, Sun Y, Balkan N, Amann A, Sopanen M.

Nanoscale Res Lett. 2011 Mar 2;6(1):191. doi: 10.1186/1556-276X-6-191.

PMID:
21711766
[PubMed]
Free PMC Article
15.

1-W antimonide-based vertical external cavity surface emitting laser operating at 2-microm.

Härkönen A, Guina M, Okhotnikov O, Rößner K, Hümmer M, Lehnhardt T, Müller M, Forchel A, Fischer M.

Opt Express. 2006 Jul 10;14(14):6479-84.

PMID:
19516826
[PubMed]
16.

Misalignment correction for optical interconnects using vertical cavity semiconductor optical amplifiers.

Song D, Zhang H, Wen P, Gross M, Esener S.

Appl Opt. 2007 Aug 1;46(22):5168-75.

PMID:
17676128
[PubMed]
17.

Effects of parallel and orthogonal polarization on nonlinear optical characteristics of a 1550 nm VCSOA.

Hurtado A, Henning ID, Adams MJ.

Opt Express. 2007 Jul 9;15(14):9084-9.

PMID:
19547247
[PubMed]
18.

A CdSe quantum dot based resonant cavity light-emitting diode showing single line emission up to 90 K.

Gust A, Kruse C, Otte K, Kalden J, Meeser T, Sebald K, Gutowski J, Hommel D.

Nanotechnology. 2009 Jan 7;20(1):015401. doi: 10.1088/0957-4484/20/1/015401. Epub 2008 Dec 8.

PMID:
19417251
[PubMed]
19.

Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers.

Lu TC, Cheng BS, Liu MC.

Opt Express. 2009 Oct 26;17(22):20149-54. doi: 10.1364/OE.17.020149.

PMID:
19997239
[PubMed - indexed for MEDLINE]
20.

1.3 microm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation.

Gerschütz F, Fischer M, Koeth J, Krestnikov I, Kovsh A, Schilling C, Kaiser W, Höfling S, Forchel A.

Opt Express. 2008 Apr 14;16(8):5596-601.

PMID:
18542663
[PubMed - indexed for MEDLINE]

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