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Results: 1 to 20 of 153

1.

Effects of applied magnetic fields and hydrostatic pressure on the optical transitions in self-assembled InAs/GaAs quantum dots.

Duque CA, Porras-Montenegro N, Barticevic Z, Pacheco M, Oliveira LE.

J Phys Condens Matter. 2006 Feb 15;18(6):1877-84. doi: 10.1088/0953-8984/18/6/005. Epub 2006 Jan 24.

PMID:
21697562
[PubMed]
2.

A theoretical study of exciton energy levels in laterally coupled quantum dots.

Barticevic Z, Pacheco M, Duque CA, Oliveira LE.

J Phys Condens Matter. 2009 Oct 7;21(40):405801. doi: 10.1088/0953-8984/21/40/405801. Epub 2009 Sep 14.

PMID:
21832423
[PubMed]
3.

Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots.

Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Finley JJ, Barker JA, O'Reilly EP, Wilson LR, Larkin IA, Maksym PA, Hopkinson M, Al-Khafaji M, David JP, Cullis AG, Hill G, Clark JC.

Phys Rev Lett. 2000 Jan 24;84(4):733-6.

PMID:
11017359
[PubMed]
4.

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots.

Zieliński M.

J Phys Condens Matter. 2013 Nov 20;25(46):465301. doi: 10.1088/0953-8984/25/46/465301. Epub 2013 Oct 15.

PMID:
24129261
[PubMed]
5.

Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer.

Sabaeian M, Khaledi-Nasab A.

Appl Opt. 2012 Jun 20;51(18):4176-85. doi: 10.1364/AO.51.004176.

PMID:
22722295
[PubMed]
6.

In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.

Li MF, Yu Y, He JF, Wang LJ, Zhu Y, Shang XJ, Ni HQ, Niu ZC.

Nanoscale Res Lett. 2013 Feb 18;8(1):86. doi: 10.1186/1556-276X-8-86.

PMID:
23414094
[PubMed]
Free PMC Article
7.

Photoluminescence up-conversion in single self-assembled InAs/GaAs quantum dots.

Kammerer C, Cassabois G, Voisin C, Delalande C, Roussignol P, Gérard JM.

Phys Rev Lett. 2001 Nov 12;87(20):207401. Epub 2001 Oct 26.

PMID:
11690509
[PubMed]
8.

Temperature dependent empirical pseudopotential theory for self-assembled quantum dots.

Wang J, Gong M, Guo GC, He L.

J Phys Condens Matter. 2012 Nov 28;24(47):475302. doi: 10.1088/0953-8984/24/47/475302. Epub 2012 Oct 26.

PMID:
23103408
[PubMed]
9.

Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate.

Bennour M, Saidi F, Bouzaïene L, Sfaxi L, Maaref H.

J Appl Phys. 2012 Jan 15;111(2):24310-243107. Epub 2012 Jan 25.

PMID:
22396623
[PubMed]
Free PMC Article
10.

Anomalous Hanle effect due to optically created transverse overhauser field in single InAs/GaAs quantum dots.

Krebs O, Maletinsky P, Amand T, Urbaszek B, Lemaître A, Voisin P, Marie X, Imamoglu A.

Phys Rev Lett. 2010 Feb 5;104(5):056603. Epub 2010 Feb 4.

PMID:
20366781
[PubMed]
11.

Quantum confinement and magnetic-field effects on the electron g factor in GaAs-(Ga, Al)As cylindrical quantum dots.

Mejía-Salazar JR, Porras-Montenegro N, Oliveira LE.

J Phys Condens Matter. 2009 Nov 11;21(45):455302. doi: 10.1088/0953-8984/21/45/455302. Epub 2009 Oct 21.

PMID:
21694007
[PubMed]
12.

Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands.

Hazdra P, Oswald J, Komarnitskyy V, Kuldová K, Hospodková A, Hulicius E, Pangrác J.

J Nanosci Nanotechnol. 2011 Aug;11(8):6804-9.

PMID:
22103083
[PubMed]
13.

Effects of hydrostatic pressure on the electron [Formula: see text] factor and g-factor anisotropy in GaAs-(Ga, Al)As quantum wells under magnetic fields.

Porras-Montenegro N, Duque CA, Reyes-Gómez E, Oliveira LE.

J Phys Condens Matter. 2008 Nov 19;20(46):465220. doi: 10.1088/0953-8984/20/46/465220. Epub 2008 Oct 27.

PMID:
21693858
[PubMed]
14.

Self-assembled growth of GaAs anti quantum dots in InAs matrix by migration enhanced molecular beam epitaxy.

Lee EH, Song JD, Kim SY, Han IK, Chang SK, Lee JI.

J Nanosci Nanotechnol. 2012 Feb;12(2):1480-2.

PMID:
22629983
[PubMed]
15.

Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots.

Laurent S, Eble B, Krebs O, Lemaître A, Urbaszek B, Marie X, Amand T, Voisin P.

Phys Rev Lett. 2005 Apr 15;94(14):147401. Epub 2005 Apr 12.

PMID:
15904109
[PubMed]
16.

Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots.

Sheng W, Leburton JP.

Phys Rev Lett. 2002 Apr 22;88(16):167401. Epub 2002 Apr 9.

PMID:
11955264
[PubMed]
17.

Optically driven spin memory in n-doped InAs-GaAs quantum dots.

Cortez S, Krebs O, Laurent S, Senes M, Marie X, Voisin P, Ferreira R, Bastard G, Gérard JM, Amand T.

Phys Rev Lett. 2002 Nov 11;89(20):207401. Epub 2002 Oct 28.

PMID:
12443505
[PubMed]
18.

Electron dephasing of a GaAs/AlGaAs quantum well with self-assembled InAs dots.

Li L, Wang J, Kim GH, Ritchie DA.

J Phys Condens Matter. 2012 Sep 26;24(38):385301. doi: 10.1088/0953-8984/24/38/385301. Epub 2012 Sep 3.

PMID:
22945470
[PubMed]
19.

Spin effects in InAs self-assembled quantum dots.

Dos Santos EC, Gobato YG, Brasil MJ, Taylor DA, Henini M.

Nanoscale Res Lett. 2011 Feb 3;6(1):115. doi: 10.1186/1556-276X-6-115.

PMID:
21711647
[PubMed]
Free PMC Article
20.

Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots.

Shamirzaev TS, Abramkin DS, Nenashev AV, Zhuravlev KS, Trojánek F, Dzurnák B, Malý P.

Nanotechnology. 2010 Apr 16;21(15):155703. doi: 10.1088/0957-4484/21/15/155703. Epub 2010 Mar 23.

PMID:
20332562
[PubMed]

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