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Items: 1 to 20 of 103

1.

Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors.

Akis R, Ayubi-Moak JS, Ferry DK, Goodnick SM, Faralli N, Saraniti M.

J Phys Condens Matter. 2008 Sep 24;20(38):384201. doi: 10.1088/0953-8984/20/38/384201. Epub 2008 Aug 21.

PMID:
21693809
2.

Heterostructure terahertz devices.

Ryzhii V.

J Phys Condens Matter. 2008 Aug 19;20(38):380301. doi: 10.1088/0953-8984/20/38/380301. Epub 2008 Jul 7.

PMID:
21693805
3.

Sub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation.

Zheng J, Wang L, Quhe R, Liu Q, Li H, Yu D, Mei WN, Shi J, Gao Z, Lu J.

Sci Rep. 2013;3:1314. doi: 10.1038/srep01314.

4.

Sub-100 nm channel length graphene transistors.

Liao L, Bai J, Cheng R, Lin YC, Jiang S, Qu Y, Huang Y, Duan X.

Nano Lett. 2010 Oct 13;10(10):3952-6. doi: 10.1021/nl101724k.

5.

Nonresonant detection of terahertz radiation in high-electron-mobility transistor structure using InAIAs/InGaAs/InP material systems at room temperature.

El Moutaouakil A, Suemitsu T, Otsuji T, Coquillat D, Knap W.

J Nanosci Nanotechnol. 2012 Aug;12(8):6737-40.

PMID:
22962815
6.

High speed terahertz modulation from metamaterials with embedded high electron mobility transistors.

Shrekenhamer D, Rout S, Strikwerda AC, Bingham C, Averitt RD, Sonkusale S, Padilla WJ.

Opt Express. 2011 May 9;19(10):9968-75. doi: 10.1364/OE.19.009968.

PMID:
21643254
7.

A III-V nanowire channel on silicon for high-performance vertical transistors.

Tomioka K, Yoshimura M, Fukui T.

Nature. 2012 Aug 9;488(7410):189-92. doi: 10.1038/nature11293.

PMID:
22854778
8.

Analysis on RF parameters of nanoscale tunneling field-effect transistor based on InAs/InGaAs/InP heterojunctions.

Woo SY, Yoon YJ, Cho S, Lee JH, Kang IM.

J Nanosci Nanotechnol. 2013 Dec;13(12):8133-6.

PMID:
24266205
9.

Monte Carlo simulation of III-V material-based MOSFET for high frequency and ultra-low consumption applications.

Shi M, Saint-Martin J, Bournel A, Maher H, Renvoise M, Dollfus P.

J Nanosci Nanotechnol. 2010 Nov;10(11):7015-9.

PMID:
21137856
10.

High-frequency, scaled graphene transistors on diamond-like carbon.

Wu Y, Lin YM, Bol AA, Jenkins KA, Xia F, Farmer DB, Zhu Y, Avouris P.

Nature. 2011 Apr 7;472(7341):74-8. doi: 10.1038/nature09979.

PMID:
21475197
11.

Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

Egard M, Johansson S, Johansson AC, Persson KM, Dey AW, Borg BM, Thelander C, Wernersson LE, Lind E.

Nano Lett. 2010 Mar 10;10(3):809-12. doi: 10.1021/nl903125m.

PMID:
20131812
13.

Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics.

Takahashi T, Takei K, Adabi E, Fan Z, Niknejad AM, Javey A.

ACS Nano. 2010 Oct 26;4(10):5855-60. doi: 10.1021/nn1018329.

PMID:
20845916
14.

InAs/InP radial nanowire heterostructures as high electron mobility devices.

Jiang X, Xiong Q, Nam S, Qian F, Li Y, Lieber CM.

Nano Lett. 2007 Oct;7(10):3214-8. Epub 2007 Sep 15.

PMID:
17867718
15.

Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires.

Lin ZC, Hsieh WH, Lee CP, Suen YW.

Nanotechnology. 2007 Feb 21;18(7):075403. doi: 10.1088/0957-4484/18/7/075403. Epub 2007 Jan 12.

PMID:
21730502
16.

Issues of nanoelectronics: a possible roadmap.

Wang KL.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):235-66. Review.

PMID:
12908252
17.

Self-aligned, extremely high frequency III-V metal-oxide-semiconductor field-effect transistors on rigid and flexible substrates.

Wang C, Chien JC, Fang H, Takei K, Nah J, Plis E, Krishna S, Niknejad AM, Javey A.

Nano Lett. 2012 Aug 8;12(8):4140-5. doi: 10.1021/nl301699k. Epub 2012 Jul 3.

PMID:
22746202
18.

Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed.

Hu Y, Xiang J, Liang G, Yan H, Lieber CM.

Nano Lett. 2008 Mar;8(3):925-30. doi: 10.1021/nl073407b. Epub 2008 Feb 6.

PMID:
18251518
19.

Self-aligned fabrication of graphene RF transistors with T-shaped gate.

Badmaev A, Che Y, Li Z, Wang C, Zhou C.

ACS Nano. 2012 Apr 24;6(4):3371-6. doi: 10.1021/nn300393c. Epub 2012 Mar 20.

PMID:
22404336
20.

Impact of strain engineering on nanoscale strained InGaAs MOSFET devices.

Lee CC, Chang ST, Sun PH, Huang CX.

J Nanosci Nanotechnol. 2011 Jul;11(7):5623-7.

PMID:
22121581
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