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Items: 1 to 20 of 345

1.

Femtosecond high-power quantum dot vertical external cavity surface emitting laser.

Hoffmann M, Sieber OD, Wittwer VJ, Krestnikov IL, Livshits DA, Barbarin Y, Südmeyer T, Keller U.

Opt Express. 2011 Apr 25;19(9):8108-16. doi: 10.1364/OE.19.008108.

PMID:
21643061
2.

High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.

Rudin B, Wittwer VJ, Maas DJ, Hoffmann M, Sieber OD, Barbarin Y, Golling M, Südmeyer T, Keller U.

Opt Express. 2010 Dec 20;18(26):27582-8. doi: 10.1364/OE.18.027582.

PMID:
21197032
3.

Femtosecond pulses from a modelocked integrated external-cavity surface emitting laser (MIXSEL).

Mangold M, Wittwer VJ, Zaugg CA, Link SM, Golling M, Tilma BW, Keller U.

Opt Express. 2013 Oct 21;21(21):24904-11. doi: 10.1364/OE.21.024904.

PMID:
24150333
4.

Low saturation fluence antiresonant quantum dot SESAMs for MIXSEL integration.

Bellancourt AR, Barbarin Y, Maas DJ, Shafiei M, Hoffmann M, Golling M, Südmeyer T, Keller U.

Opt Express. 2009 Jun 8;17(12):9704-11.

PMID:
19506619
5.

Pulse repetition rate scaling from 5 to 100 GHz with a high-power semiconductor disk laser.

Mangold M, Zaugg CA, Link SM, Golling M, Tilma BW, Keller U.

Opt Express. 2014 Mar 10;22(5):6099-107. doi: 10.1364/OE.22.006099.

PMID:
24663944
6.

4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation.

Wilcox KG, Tropper AC, Beere HE, Ritchie DA, Kunert B, Heinen B, Stolz W.

Opt Express. 2013 Jan 28;21(2):1599-605. doi: 10.1364/OE.21.001599.

PMID:
23389144
7.

Ultrashort pulse generation from 1.56 µm mode-locked VECSEL at room temperature.

Khadour A, Bouchoule S, Aubin G, Harmand JC, Decobert J, Oudar JL.

Opt Express. 2010 Sep 13;18(19):19902-13. doi: 10.1364/OE.18.019902.

PMID:
20940881
8.

Femtosecond VECSEL with tunable multi-gigahertz repetition rate.

Sieber OD, Wittwer VJ, Mangold M, Hoffmann M, Golling M, Südmeyer T, Keller U.

Opt Express. 2011 Nov 7;19(23):23538-43. doi: 10.1364/OE.19.023538.

PMID:
22109232
9.

Subpicosecond pulse generation from a 1.56 μm mode-locked VECSEL.

Zhao Z, Bouchoule S, Song J, Galopin E, Harmand JC, Decobert J, Aubin G, Oudar JL.

Opt Lett. 2011 Nov 15;36(22):4377-9. doi: 10.1364/OL.36.004377.

PMID:
22089569
10.

Femtosecond synchronously in-well pumped vertical-external-cavity surface-emitting laser.

Zhang W, McDonald A, Ackemann T, Riis E, McConnell G.

Opt Express. 2010 Jan 4;18(1):187-92. doi: 10.1364/OE.18.000187.

PMID:
20173838
11.

Growth parameter optimization for fast quantum dot SESAMs.

Maas DJ, Bellancourt AR, Hoffmann M, Rudin B, Barbarin Y, Golling M, Südmeyer T, Keller U.

Opt Express. 2008 Nov 10;16(23):18646-56.

PMID:
19581950
12.

Repetition-frequency-tunable mode-locked surface emitting semiconductor laser between 2.78 and 7.87 GHz.

Wilcox KG, Quarterman AH, Beere HE, Ritchie DA, Tropper AC.

Opt Express. 2011 Nov 7;19(23):23453-9. doi: 10.1364/OE.19.023453.

PMID:
22109222
13.

Sub-300-femtosecond operation from a MIXSEL.

Mangold M, Golling M, Gini E, Tilma BW, Keller U.

Opt Express. 2015 Aug 24;23(17):22043-59. doi: 10.1364/OE.23.022043.

PMID:
26368179
14.

Gain characterization and passive modelocking of electrically pumped VECSELs.

Pallmann WP, Zaugg CA, Mangold M, Wittwer VJ, Moench H, Gronenborn S, Miller M, Tilma BW, Südmeyer T, Keller U.

Opt Express. 2012 Oct 22;20(22):24791-802. doi: 10.1364/OE.20.024791.

PMID:
23187244
15.

High peak-power picosecond pulse generation at 1.26 µm using a quantum-dot-based external-cavity mode-locked laser and tapered optical amplifier.

Ding Y, Aviles-Espinosa R, Cataluna MA, Nikitichev D, Ruiz M, Tran M, Robert Y, Kapsalis A, Simos H, Mesaritakis C, Xu T, Bardella P, Rossetti M, Krestnikov I, Livshits D, Montrosset I, Syvridis D, Krakowski M, Loza-Alvarez P, Rafailov E.

Opt Express. 2012 Jun 18;20(13):14308-20. doi: 10.1364/OE.20.014308.

PMID:
22714493
16.
17.

175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser.

Wilcox KG, Quarterman AH, Apostolopoulos V, Beere HE, Farrer I, Ritchie DA, Tropper AC.

Opt Express. 2012 Mar 26;20(7):7040-5. doi: 10.1364/OE.20.007040.

PMID:
22453384
18.

1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser.

Zhang ZY, Oehler AE, Resan B, Kurmulis S, Zhou KJ, Wang Q, Mangold M, Süedmeyer T, Keller U, Weingarten KJ, Hogg RA.

Sci Rep. 2012;2:477. doi: 10.1038/srep00477. Epub 2012 Jun 28.

19.

Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach.

Zaugg CA, Hoffmann M, Pallmann WP, Wittwer VJ, Sieber OD, Mangold M, Golling M, Weingarten KJ, Tilma BW, Südmeyer T, Keller U.

Opt Express. 2012 Dec 3;20(25):27915-21. doi: 10.1364/OE.20.027915.

PMID:
23262737
20.

An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses.

Lu ZG, Liu JR, Poole PJ, Raymond S, Barrios PJ, Poitras D, Pakulski G, Grant P, Roy-Guay D.

Opt Express. 2009 Aug 3;17(16):13609-14.

PMID:
19654768
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