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Results: 1 to 20 of 196

Similar articles for PubMed (Select 21369280)

1.

Broadband linearized silicon modulator.

Khilo A, Sorace CM, Kärtner FX.

Opt Express. 2011 Feb 28;19(5):4485-500. doi: 10.1364/OE.19.004485.

PMID:
21369280
2.

Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator.

Ding J, Chen H, Yang L, Zhang L, Ji R, Tian Y, Zhu W, Lu Y, Zhou P, Min R, Yu M.

Opt Express. 2012 Mar 26;20(7):7081-7. doi: 10.1364/OE.20.007081.

PMID:
22453389
3.

Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator.

Dong P, Liao S, Feng D, Liang H, Zheng D, Shafiiha R, Kung CC, Qian W, Li G, Zheng X, Krishnamoorthy AV, Asghari M.

Opt Express. 2009 Dec 7;17(25):22484-90. doi: 10.1364/OE.17.022484.

PMID:
20052172
4.
5.

High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators.

Dong P, Chen L, Chen YK.

Opt Express. 2012 Mar 12;20(6):6163-9. doi: 10.1364/OE.20.006163.

PMID:
22418496
6.

CMOS-compatible dual-output silicon modulator for analog signal processing.

Spector SJ, Geis MW, Zhou GR, Grein ME, Gan F, Popovic MA, Yoon JU, Lennon DM, Ippen EP, Kärtner FZ, Lyszczarz TM.

Opt Express. 2008 Jul 21;16(15):11027-31.

PMID:
18648416
7.

Highly linear silicon traveling wave Mach-Zehnder carrier depletion modulator based on differential drive.

Streshinsky M, Ayazi A, Xuan Z, Lim AE, Lo GQ, Baehr-Jones T, Hochberg M.

Opt Express. 2013 Feb 11;21(3):3818-25. doi: 10.1364/OE.21.003818.

PMID:
23481838
8.

10 Gb/s operation of photonic crystal silicon optical modulators.

Nguyen HC, Sakai Y, Shinkawa M, Ishikura N, Baba T.

Opt Express. 2011 Jul 4;19(14):13000-7. doi: 10.1364/OE.19.013000.

PMID:
21747452
9.

High speed hybrid silicon evanescent Mach-Zehnder modulator and switch.

Chen HW, Kuo YH, Bowers JE.

Opt Express. 2008 Dec 8;16(25):20571-6.

PMID:
19065195
10.

Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp.

Chen HW, Peters JD, Bowers JE.

Opt Express. 2011 Jan 17;19(2):1455-60. doi: 10.1364/OE.19.001455.

PMID:
21263687
11.

Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity.

Tanabe T, Nishiguchi K, Kuramochi E, Notomi M.

Opt Express. 2009 Dec 7;17(25):22505-13. doi: 10.1364/OE.17.022505.

PMID:
20052175
12.

Design of a digital, ultra-broadband electro-optic switch for reconfigurable optical networks-on-chip.

Van Campenhout J, Green WM, Vlasov YA.

Opt Express. 2009 Dec 21;17(26):23793-808. doi: 10.1364/OE.17.023793.

PMID:
20052090
13.

A 2.5 ns switching time MachZehnder modulator in as-deposited a-Si:H.

Rao S, Coppola G, Gioffrè MA, Della Corte FG.

Opt Express. 2012 Apr 23;20(9):9351-6. doi: 10.1364/OE.20.009351.

PMID:
22535023
14.

Performance influence of carrier absorption to the Mach-Zehnder-interference based silicon optical switches.

Zhou H, Zhao Y, Wang W, Yang J, Wang M, Jiang X.

Opt Express. 2009 Apr 27;17(9):7043-51.

PMID:
19399079
15.

Performance evaluation of photonic UWB generation based on silicon MZM.

Shao H, Chen W, Zhao Y, Chi H, Yang J, Jiang X.

Opt Express. 2012 Mar 26;20(7):7398-403. doi: 10.1364/OE.20.007398.

PMID:
22453419
16.

12.5-Gb/s operation with 0.29-V·cm V(π)L using silicon Mach-Zehnder modulator based-on forward-biased pin diode.

Akiyama S, Baba T, Imai M, Akagawa T, Takahashi M, Hirayama N, Takahashi H, Noguchi Y, Okayama H, Horikawa T, Usuki T.

Opt Express. 2012 Jan 30;20(3):2911-23. doi: 10.1364/OE.20.002911.

PMID:
22330529
17.

Slope efficiency and spurious-free dynamic range of silicon Mach-Zehnder modulator upon carrier depletion and injection effects.

Luo X, Tu X, Song J, Ding L, Fang Q, Liow TY, Yu M, Lo GQ.

Opt Express. 2013 Jul 15;21(14):16570-7. doi: 10.1364/OE.21.016570.

PMID:
23938508
18.

Regenerative properties of interferometricall-optical DPSK wavelength converters.

Wang J, Maitra A, Freude W, Leuthold J.

Opt Express. 2009 Dec 7;17(25):22639-58. doi: 10.1364/OE.17.022639.

PMID:
20052190
19.

Compact and fast photonic crystal silicon optical modulators.

Nguyen HC, Hashimoto S, Shinkawa M, Baba T.

Opt Express. 2012 Sep 24;20(20):22465-74. doi: 10.1364/OE.20.022465.

PMID:
23037395
20.

Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator.

Feng NN, Liao S, Feng D, Wang X, Dong P, Liang H, Kung CC, Qian W, Liu Y, Fong J, Shafiiha R, Luo Y, Cunningham J, Krishnamoorthy AV, Asghari M.

Opt Express. 2011 Apr 25;19(9):8715-20. doi: 10.1364/OE.19.008715.

PMID:
21643123
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