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Similar articles for PubMed (Select 21263592)

1.

Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers.

Henneghien AL, Tourbot G, Daudin B, Lartigue O, Désières Y, Gérard JM.

Opt Express. 2011 Jan 17;19(2):527-39. doi: 10.1364/OE.19.000527.

PMID:
21263592
2.

Surface-Effect-Induced Optical Bandgap Shrinkage in GaN Nanotubes.

Park YS, Lee G, Holmes MJ, Chan CC, Reid BP, Alexander-Webber JA, Nicholas RJ, Taylor RA, Kim KS, Han SW, Yang W, Jo Y, Kim J, Im H.

Nano Lett. 2015 Jun 10. [Epub ahead of print]

PMID:
26046390
3.

Gallium Nitride Nanowires and Heterostructures: Toward Color-Tunable and White-Light Sources.

Kuykendall TR, Schwartzberg AM, Aloni S.

Adv Mater. 2015 May 28. doi: 10.1002/adma.201500522. [Epub ahead of print]

PMID:
26032973
4.
5.

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.

Wölz M, Hauswald C, Flissikowski T, Gotschke T, Fernández-Garrido S, Brandt O, Grahn HT, Geelhaar L, Riechert H.

Nano Lett. 2015 Jun 10;15(6):3743-7. doi: 10.1021/acs.nanolett.5b00251. Epub 2015 May 29.

PMID:
26001039
6.

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles.

Fernández-Garrido S, Zettler JK, Geelhaar L, Brandt O.

Nano Lett. 2015 Mar 11;15(3):1930-7. doi: 10.1021/nl504778s. Epub 2015 Feb 17.

PMID:
25671678
7.

Improvement of the light extraction efficiency of GaN-based LEDs using rolled-up nanotube arrays.

Djavid M, Liu X, Mi Z.

Opt Express. 2014 Dec 15;22 Suppl 7:A1680-6. doi: 10.1364/OE.22.0A1680.

PMID:
25607481
8.

Optical properties of plasmonic light-emitting diodes based on flip-chip III-nitride core-shell nanowires.

Nami M, Feezell DF.

Opt Express. 2014 Dec 1;22(24):29445-55. doi: 10.1364/OE.22.029445.

PMID:
25606879
9.

Formation mechanisms of GaN nanowires grown by selective area growth homoepitaxy.

Gačević Ž, Gómez Sánchez D, Calleja E.

Nano Lett. 2015 Feb 11;15(2):1117-21. doi: 10.1021/nl504099s. Epub 2015 Jan 22.

PMID:
25603117
10.

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy.

Yu IS, Chang CP, Yang CP, Lin CT, Ma YR, Chen CC.

Nanoscale Res Lett. 2014 Dec 17;9(1):682. doi: 10.1186/1556-276X-9-682. eCollection 2014.

11.

Extraction of absorption coefficients from as-grown GaN nanowires on opaque substrates using all-optical method.

Jayaprakash R, Ajagunna D, Germanis S, Androulidaki M, Tsagaraki K, Georgakilas A, Pelekanos NT.

Opt Express. 2014 Aug 11;22(16):19555-66. doi: 10.1364/OE.22.019555.

PMID:
25321038
12.

Bright-white beetle scales optimise multiple scattering of light.

Burresi M, Cortese L, Pattelli L, Kolle M, Vukusic P, Wiersma DS, Steiner U, Vignolini S.

Sci Rep. 2014 Aug 15;4:6075. doi: 10.1038/srep06075. Erratum in: Sci Rep. 2014;4:7271.

13.

Origin of yellow-band emission in epitaxially grown GaN nanowire arrays.

Liu B, Yuan F, Dierre B, Sekiguchi T, Zhang S, Xu Y, Jiang X.

ACS Appl Mater Interfaces. 2014 Aug 27;6(16):14159-66. doi: 10.1021/am5034878. Epub 2014 Aug 1.

PMID:
25057903
14.

Extraction of light trapped due to total internal reflection using porous high refractive index nanoparticle films.

Mao P, Sun F, Yao H, Chen J, Zhao B, Xie B, Han M, Wang G.

Nanoscale. 2014 Jul 21;6(14):8177-84. doi: 10.1039/c4nr01065e.

PMID:
24927071
15.

Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates.

Horng RH, Wu BR, Tien CH, Ou SL, Yang MH, Kuo HC, Wuu DS.

Opt Express. 2014 Jan 13;22 Suppl 1:A179-87. doi: 10.1364/OE.22.00A179.

PMID:
24921994
16.

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers.

Jana D, Porwal S, Sharma TK, Kumar S, Oak SM.

Rev Sci Instrum. 2014 Apr;85(4):043909. doi: 10.1063/1.4871990.

PMID:
24784628
17.

Light propagation in conjugated polymer nanowires decoupled from a substrate.

Pyo J, Kim JT, Yoo J, Je JH.

Nanoscale. 2014 Jun 7;6(11):5620-3. doi: 10.1039/c4nr00202d. Epub 2014 Apr 22.

PMID:
24752194
18.

Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.

Borysiuk J, Zytkiewicz ZR, Sobanska M, Wierzbicka A, Klosek K, Korona KP, Perkowska PS, Reszka A.

Nanotechnology. 2014 Apr 4;25(13):135610. doi: 10.1088/0957-4484/25/13/135610. Epub 2014 Mar 5.

PMID:
24598248
19.

Optimization of light delivery by a nanowire-based single cell optical endoscope.

Ladanov M, Cheemalapati S, Pyayt A.

Opt Express. 2013 Nov 18;21(23):28001-9. doi: 10.1364/OE.21.028001.

PMID:
24514313
20.

In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching.

Wilkins SJ, Greenough M, Arellano C, Paskova T, Ivanisevic A.

Langmuir. 2014 Mar 4;30(8):2038-46. doi: 10.1021/la404511b. Epub 2014 Feb 18.

PMID:
24502420
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