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Similar articles for PubMed (Select 21212489)

1.

Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts.

Iikawa F, Donchev V, Ivanov Ts, Dias GO, Tizei LH, Lang R, Heredia E, Gomes PF, Brasil MJ, Cotta MA, Ugarte D, Martinez Pastor JP, de Lima MM Jr, Cantarero A.

Nanotechnology. 2011 Feb 11;22(6):065703. doi: 10.1088/0957-4484/22/6/065703. Epub 2011 Jan 7.

PMID:
21212489
2.

Growth and characterization of InP ringlike quantum-dot molecules grown by solid-source molecular beam epitaxy.

Jevasuwan W, Boonpeng P, Panyakeow S, Ratanathammaphan S.

J Nanosci Nanotechnol. 2010 Nov;10(11):7291-4.

PMID:
21137917
3.

Morphology and optical properties of single- and multi-layer InAs quantum dots.

Hsu CC, Hsu RQ, Wu YH.

J Electron Microsc (Tokyo). 2010 Aug;59 Suppl 1:S149-54. doi: 10.1093/jmicro/dfq053. Epub 2010 Jun 24.

PMID:
20576720
4.

Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.

Trevisi G, Seravalli L, Frigeri P, Franchi S.

Nanotechnology. 2009 Oct 14;20(41):415607. doi: 10.1088/0957-4484/20/41/415607. Epub 2009 Sep 18.

PMID:
19762951
5.
6.

Growth, structural, and optical properties of self-assembled (In,Ga)as quantum posts on GaAs.

He J, Krenner HJ, Pryor C, Zhang JP, Wu Y, Allen DG, Morris CM, Sherwin MS, Petroff PM.

Nano Lett. 2007 Mar;7(3):802-6. Epub 2007 Feb 28.

PMID:
17326694
7.

Enhanced sequential carrier capture into individual quantum dots and quantum posts controlled by surface acoustic waves.

Völk S, Schülein FJ, Knall F, Reuter D, Wieck AD, Truong TA, Kim H, Petroff PM, Wixforth A, Krenner HJ.

Nano Lett. 2010 Sep 8;10(9):3399-407. doi: 10.1021/nl1013053.

PMID:
20722408
8.

Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy.

Rödel R, Bauer A, Kremling S, Reitzenstein S, Höfling S, Kamp M, Worschech L, Forchel A.

Nanotechnology. 2012 Jan 13;23(1):015605. doi: 10.1088/0957-4484/23/1/015605. Epub 2011 Dec 8.

PMID:
22156168
9.

Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures.

Pemasiri K, Montazeri M, Gass R, Smith LM, Jackson HE, Yarrison-Rice J, Paiman S, Gao Q, Tan HH, Jagadish C, Zhang X, Zou J.

Nano Lett. 2009 Feb;9(2):648-54. doi: 10.1021/nl802997p.

PMID:
19170615
10.

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots.

Zieliński M.

J Phys Condens Matter. 2013 Nov 20;25(46):465301. doi: 10.1088/0953-8984/25/46/465301. Epub 2013 Oct 15.

PMID:
24129261
11.

Growth and characterization of self-assembled InAs/InP quantum dot structures.

Barik S, Tan HH, Wong-Leung J, Jagadish C.

J Nanosci Nanotechnol. 2010 Mar;10(3):1525-36.

PMID:
20355541
12.

Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots.

Shamirzaev TS, Abramkin DS, Nenashev AV, Zhuravlev KS, Trojánek F, Dzurnák B, Malý P.

Nanotechnology. 2010 Apr 16;21(15):155703. doi: 10.1088/0957-4484/21/15/155703. Epub 2010 Mar 23.

PMID:
20332562
13.

Site-controlled self-assembled InAs quantum dots grown on GaAs substrates.

Lin SY, Tseng CC, Chung TH, Liao WH, Chen SH, Chyi JI.

Nanotechnology. 2010 Jul 23;21(29):295304. doi: 10.1088/0957-4484/21/29/295304. Epub 2010 Jul 5.

PMID:
20601753
14.

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well.

Tatebayashi J, Liang BL, Laghumavarapu RB, Bussian DA, Htoon H, Klimov V, Balakrishnan G, Dawson LR, Huffaker DL.

Nanotechnology. 2008 Jul 23;19(29):295704. doi: 10.1088/0957-4484/19/29/295704. Epub 2008 Jun 10.

PMID:
21730609
15.

High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer.

Wang Y, Zou J, Zhao ZM, Hao Z, Wang KL.

Nanotechnology. 2009 Jul 29;20(30):305301. doi: 10.1088/0957-4484/20/30/305301. Epub 2009 Jul 7.

PMID:
19581699
16.

The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors.

Jolley G, Fu L, Tan HH, Jagadish C.

Nanoscale. 2010 Jul;2(7):1128-33. doi: 10.1039/c0nr00128g. Epub 2010 Jun 1.

PMID:
20648338
17.

Structure and composition profile of InAs/GaAs quantum dots capped by an InGaAs and InAlAs combination layer.

He J, Wu Y, Wang KL.

Nanotechnology. 2010 Jun 25;21(25):255705. doi: 10.1088/0957-4484/21/25/255705. Epub 2010 Jun 2.

PMID:
20516585
18.

A theoretical study of exciton energy levels in laterally coupled quantum dots.

Barticevic Z, Pacheco M, Duque CA, Oliveira LE.

J Phys Condens Matter. 2009 Oct 7;21(40):405801. doi: 10.1088/0953-8984/21/40/405801. Epub 2009 Sep 14.

PMID:
21832423
19.
20.

Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands.

Hazdra P, Oswald J, Komarnitskyy V, Kuldová K, Hospodková A, Hulicius E, Pangrác J.

J Nanosci Nanotechnol. 2011 Aug;11(8):6804-9.

PMID:
22103083
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