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Items: 1 to 20 of 100

1.

Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission.

Alonso-González P, González L, Martín-Sánchez J, González Y, Fuster D, Sales DL, Hernández-Maldonado D, Herrera M, Molina SI.

Nanoscale Res Lett. 2010 Sep 5;5(12):1913-6. doi: 10.1007/s11671-010-9771-2.

2.

Single site-controlled In(Ga)As/GaAs quantum dots: growth, properties and device integration.

Schneider C, Huggenberger A, Sünner T, Heindel T, Strauss M, Göpfert S, Weinmann P, Reitzenstein S, Worschech L, Kamp M, Höfling S, Forchel A.

Nanotechnology. 2009 Oct 28;20(43):434012. doi: 10.1088/0957-4484/20/43/434012. Epub 2009 Oct 2.

PMID:
19801767
3.

Vertically stacked quantum dot pairs fabricated by nanohole filling.

Sonnenberg D, Küster A, Graf A, Heyn Ch, Hansen W.

Nanotechnology. 2014 May 30;25(21):215602. doi: 10.1088/0957-4484/25/21/215602. Epub 2014 May 2.

PMID:
24784358
4.

Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots.

Wang P, Pan W, Wu X, Liu J, Cao C, Wang S, Gong Q.

Nanoscale Res Lett. 2016 Dec;11(1):280. doi: 10.1186/s11671-016-1470-1. Epub 2016 Jun 2.

5.

Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.

Guimard D, Ishida M, Bordel D, Li L, Nishioka M, Tanaka Y, Ekawa M, Sudo H, Yamamoto T, Kondo H, Sugawara M, Arakawa Y.

Nanotechnology. 2010 Mar 12;21(10):105604. doi: 10.1088/0957-4484/21/10/105604. Epub 2010 Feb 16.

PMID:
20160334
6.

Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.

Trevisi G, Seravalli L, Frigeri P, Franchi S.

Nanotechnology. 2009 Oct 14;20(41):415607. doi: 10.1088/0957-4484/20/41/415607. Epub 2009 Sep 18.

PMID:
19762951
7.

Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy.

Liang BL, Wang ZM, Wang XY, Lee JH, Mazur YI, Shih CK, Salamo GJ.

ACS Nano. 2008 Nov 25;2(11):2219-24. doi: 10.1021/nn800224p.

PMID:
19206386
8.

Towards controllable growth of self-assembled SiGe single and double quantum dot nanostructures.

Ma Y, Huang S, Zeng C, Zhou T, Zhong Z, Zhou T, Fan Y, Yang X, Xia J, Jiang Z.

Nanoscale. 2014 Apr 21;6(8):3941-8. doi: 10.1039/c3nr04114j. Epub 2013 Oct 31.

PMID:
24173689
9.

Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE.

Halder N, Suseendran J, Chakrabarti S, Herrera M, Bonds M, Browning ND.

J Nanosci Nanotechnol. 2010 Aug;10(8):5202-6.

PMID:
21125871
10.

InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation.

Wong PS, Liang B, Huffaker DL.

J Nanosci Nanotechnol. 2010 Mar;10(3):1537-50.

PMID:
20355542
11.

In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.

Li MF, Yu Y, He JF, Wang LJ, Zhu Y, Shang XJ, Ni HQ, Niu ZC.

Nanoscale Res Lett. 2013 Feb 18;8(1):86. doi: 10.1186/1556-276X-8-86.

12.

Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems.

Dai L, Bremner SP, Tan S, Wang S, Zhang G, Liu Z.

Nanoscale Res Lett. 2015 Apr 29;10:202. doi: 10.1186/s11671-015-0908-1. eCollection 2015.

13.

Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling.

Lee EH, Song JD, Han IK, Chang SK, Langer F, Höfling S, Forchel A, Kamp M, Kim JS.

Nanoscale Res Lett. 2015 Mar 10;10:114. doi: 10.1186/s11671-015-0826-2. eCollection 2015.

14.

Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots.

Chen ZS, Ma B, Shang XJ, He Y, Zhang LC, Ni HQ, Wang JL, Niu ZC.

Nanoscale Res Lett. 2016 Dec;11(1):382. doi: 10.1186/s11671-016-1597-0. Epub 2016 Aug 30.

15.

Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm.

Liu WS, Tseng HL, Kuo PC.

Opt Express. 2014 Aug 11;22(16):18860-9. doi: 10.1364/OE.22.018860.

PMID:
25320972
16.

Droplet etching of deep nanoholes for filling with self-aligned complex quantum structures.

Küster A, Heyn C, Ungeheuer A, Juska G, Tommaso Moroni S, Pelucchi E, Hansen W.

Nanoscale Res Lett. 2016 Dec;11(1):282. doi: 10.1186/s11671-016-1495-5. Epub 2016 Jun 3.

17.
18.

Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements.

Sharma M, Sanyal MK, Farrer I, Ritchie DA, Dey AB, Bhattacharyya A, Seeck OH, Skiba-Szymanska J, Felle M, Bennett AJ, Shields AJ.

Sci Rep. 2015 Oct 28;5:15732. doi: 10.1038/srep15732.

19.

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer.

Liu Y, Liang B, Guo Q, Wang S, Fu G, Fu N, Wang ZM, Mazur YI, Salamo GJ.

Nanoscale Res Lett. 2015 Dec;10(1):973. doi: 10.1186/s11671-015-0973-5. Epub 2015 Jun 26.

20.

Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface.

Liang BL, Wong PS, Pavarelli N, Tatebayashi J, Ochalski TJ, Huyet G, Huffaker DL.

Nanotechnology. 2011 Feb 4;22(5):055706. doi: 10.1088/0957-4484/22/5/055706. Epub 2010 Dec 22.

PMID:
21178233
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