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J Nanosci Nanotechnol. 2010 Nov;10(11):7130-3.

A new chemically amplified resist for high resolution patterning by E-beam lithography.

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  • 1Micro and Nanotechnology Center, Rutherford Appleton Laboratory Chilton, Didcot, Oxon, OX11 0QX, UK.


In this work, we have undertaken evaluation of the lithography property of a recently available chemically amplified resist (CAR) resist, UV1116 supplied by Rohm and Haas Company. Systematic study of the EBL property such as sensitivity, contrast, high resolution limit and dense capability, as well as resistance to plasma dry etching has been carried out. In comparison with the performance of UVIII, we conclude that the UV1116 can be a good alternative with better lithography quality.

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