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1.

One-dimensional germanium nanostructures--formation and their electron field emission properties.

Wu HC, Hou TC, Chueh YL, Chen LJ, Chiu HT, Lee CY.

Nanotechnology. 2010 Nov 12;21(45):455601. doi: 10.1088/0957-4484/21/45/455601. Epub 2010 Oct 14.

PMID:
20947940
2.

Reliability enhancement of germanium nanowires using graphene as a protective layer: aspect of thermal stability.

Lee JH, Choi SH, Patole SP, Jang Y, Heo K, Joo WJ, Yoo JB, Hwang SW, Whang D.

ACS Appl Mater Interfaces. 2014 Apr 9;6(7):5069-74. doi: 10.1021/am5001294. Epub 2014 Mar 21.

PMID:
24617670
4.

Synthesis and characterization of taper- and rodlike si nanowires on Si(x)Ge(1-x) substrate.

Chueh YL, Chou LJ, Hsu CM, Kung SC.

J Phys Chem B. 2005 Nov 24;109(46):21831-5.

PMID:
16853835
5.

Ge/Si nanowire heterostructures as high-performance field-effect transistors.

Xiang J, Lu W, Hu Y, Wu Y, Yan H, Lieber CM.

Nature. 2006 May 25;441(7092):489-93.

PMID:
16724062
6.

Stranski-Krastanow growth of germanium on silicon nanowires.

Pan L, Lew KK, Redwing JM, Dickey EC.

Nano Lett. 2005 Jun;5(6):1081-5.

PMID:
15943447
7.
8.

One-step chemical vapor growth of Ge/SiC(x)N(y) nanocables.

Mathur S, Shen H, Donia N, Rügamer T, Sivakov V, Werner U.

J Am Chem Soc. 2007 Aug 8;129(31):9746-52. Epub 2007 Jul 13.

PMID:
17629271
9.

TaSi2 nanowires: A potential field emitter and interconnect.

Chueh YL, Ko MT, Chou LJ, Chen LJ, Wu CS, Chen CD.

Nano Lett. 2006 Aug;6(8):1637-44.

PMID:
16895349
10.

Enhanced field emission from H2 plasma-treated alpha-Fe2O3 nanowires.

Xu F, Yu K, Wang Q, Shi M, Zhang Q, Bai W, Li Q, Zhu Z.

J Nanosci Nanotechnol. 2007 Aug;7(8):2774-7.

PMID:
17685296
11.

Growth, photoluminescence, and field emission of hierarchical ZnO nanostructures.

Xu F, Yu K, Shi M, Wang Q, Zhu Z, Huang S.

J Nanosci Nanotechnol. 2006 Dec;6(12):3794-8.

PMID:
17256332
12.

Long germanium nanowires prepared by electrochemical etching.

Fang C, Föll H, Carstensen J.

Nano Lett. 2006 Jul;6(7):1578-80.

PMID:
16834454
13.

Aloetic-shaped SiC nanowires: synthesis and field electron emission properties.

Cao L, Jiang H, Song H, Li Z, Liu X, Guo W, Yan D, Sun X, Zhao H, Miao G, Li D.

J Nanosci Nanotechnol. 2010 Mar;10(3):2104-7.

PMID:
20355635
14.
15.

Large field enhancement at electrochemically grown quasi-1D Ni nanostructures with low-threshold cold-field electron emission.

Banerjee AN, Qian S, Joo SW.

Nanotechnology. 2011 Jan 21;22(3):035702. doi: 10.1088/0957-4484/22/3/035702. Epub 2010 Dec 9.

PMID:
21149965
16.

Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires.

Zhang X, Lew KK, Nimmatoori P, Redwing JM, Dickey EC.

Nano Lett. 2007 Oct;7(10):3241-5. Epub 2007 Sep 26.

PMID:
17894516
17.

Excellent field-emission properties of P-doped GaN nanowires.

Liu BD, Bando Y, Tang CC, Xu FF, Golberg D.

J Phys Chem B. 2005 Nov 24;109(46):21521-4.

PMID:
16853794
18.

Crabwise ZnO nanowires: growth and field emission properties.

Hsueh TJ, Hsu CL, Chang SJ, Lu CY, Lin YR, Chen IC.

J Nanosci Nanotechnol. 2007 Mar;7(3):1076-9.

PMID:
17450879
19.

Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers.

Jung JH, Yoon HS, Kim YL, Song MS, Kim Y, Chen ZG, Zou J, Choi DY, Kang JH, Joyce HJ, Gao Q, Hoe Tan H, Jagadish C.

Nanotechnology. 2010 Jul 23;21(29):295602. doi: 10.1088/0957-4484/21/29/295602. Epub 2010 Jun 29.

PMID:
20585174
20.

Optical and field emission properties of thin single-crystalline GaN nanowires.

Ha B, Seo SH, Cho JH, Yoon CS, Yoo J, Yi GC, Park CY, Lee CJ.

J Phys Chem B. 2005 Jun 9;109(22):11095-9.

PMID:
16852353
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