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Similar articles for PubMed (Select 20648338)

1.

The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors.

Jolley G, Fu L, Tan HH, Jagadish C.

Nanoscale. 2010 Jul;2(7):1128-33. doi: 10.1039/c0nr00128g. Epub 2010 Jun 1.

PMID:
20648338
2.

InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.

Fu Y, Wang SM, Ferdos F, Sadeghi M, Larsson A.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):421-6.

PMID:
12908273
3.

Strong enhancement of solar cell efficiency due to quantum dots with built-in charge.

Sablon KA, Little JW, Mitin V, Sergeev A, Vagidov N, Reinhardt K.

Nano Lett. 2011 Jun 8;11(6):2311-7. doi: 10.1021/nl200543v. Epub 2011 May 5.

PMID:
21545165
4.

Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures.

Liu XQ, Lu W, Shen SC, Tan HH, Jagadish C, Zou J.

J Nanosci Nanotechnol. 2001 Dec;1(4):389-92.

PMID:
12914079
5.

Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing.

Ling HS, Wang SY, Hsu WC, Lee CP.

Opt Express. 2012 May 7;20(10):10484-9. doi: 10.1364/OE.20.010484.

PMID:
22565673
6.

Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.

Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.

J Nanosci Nanotechnol. 2007 Aug;7(8):2889-93.

PMID:
17685312
7.

Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces.

Wu J, Wang ZM, Dorogan VG, Li S, Mazur YI, Salamo GJ.

Nanoscale. 2011 Apr;3(4):1485-8. doi: 10.1039/c0nr00973c. Epub 2011 Mar 8.

PMID:
21384043
8.

The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.

Seravalli L, Trevisi G, Frigeri P, Franchi S, Geddo M, Guizzetti G.

Nanotechnology. 2009 Jul 8;20(27):275703. doi: 10.1088/0957-4484/20/27/275703. Epub 2009 Jun 17.

PMID:
19531853
9.

Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs.

Zhang Y, Ning Y, Zhang L, Zhang J, Zhang J, Wang Z, Zhang J, Zeng Y, Wang L.

Opt Express. 2011 Jun 20;19(13):12569-81. doi: 10.1364/OE.19.012569.

PMID:
21716498
10.
11.

Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.

Trevisi G, Seravalli L, Frigeri P, Franchi S.

Nanotechnology. 2009 Oct 14;20(41):415607. doi: 10.1088/0957-4484/20/41/415607. Epub 2009 Sep 18.

PMID:
19762951
12.

Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser.

Djie HS, Ooi BS, Fang XM, Wu Y, Fastenau JM, Liu WK, Hopkinson M.

Opt Lett. 2007 Jan 1;32(1):44-6.

PMID:
17167578
13.

Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy.

Wu J, Shao D, Dorogan VG, Li AZ, Li S, DeCuir EA, Manasreh MO, Wang ZM, Mazur YI, Salamo GJ.

Nano Lett. 2010 Apr 14;10(4):1512-6. doi: 10.1021/nl100217k.

PMID:
20356102
14.

Energy states, transport, and magnetotransport in diluted magnetic semiconductor (Ga, Mn)As with quantum well InGaAs.

Shchurova LY, Kulbachinskii VA.

J Nanosci Nanotechnol. 2011 Mar;11(3):2678-81.

PMID:
21449453
15.

Direct observation of polarons in electron populated quantum dots by resonant Raman scattering.

Aslan B, Liu HC, Korkusinski M, Hawrylak P, Lockwood DJ.

J Nanosci Nanotechnol. 2008 Feb;8(2):789-94.

PMID:
18464407
16.

Coherent emission from ultrathin-walled spiral InGaAs/GaAs quantum dot microtubes.

Li F, Mi Z, Vicknesh S.

Opt Lett. 2009 Oct 1;34(19):2915-7. doi: 10.1364/OL.34.002915.

PMID:
19794766
17.

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.

Heiss M, Ketterer B, Uccelli E, Morante JR, Arbiol J, Fontcuberta i Morral A.

Nanotechnology. 2011 May 13;22(19):195601. doi: 10.1088/0957-4484/22/19/195601. Epub 2011 Mar 23.

PMID:
21430322
18.

Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure.

Prasankumar RP, Attaluri RS, Averitt RD, Urayama J, Weisse-Bernstein N, Rotella P, Stintz AD, Krishna S, Taylor AJ.

Opt Express. 2008 Jan 21;16(2):1165-73.

PMID:
18542190
19.

High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.

Cao Y, Ji H, Xu P, Gu Y, Ma W, Yang T.

Opt Lett. 2012 Oct 1;37(19):4071-3. doi: 10.1364/OL.37.004071.

PMID:
23027282
20.

Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.

Tanabe K, Guimard D, Bordel D, Iwamoto S, Arakawa Y.

Opt Express. 2010 May 10;18(10):10604-8. doi: 10.1364/OE.18.010604.

PMID:
20588912
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