Display Settings:

Format
Items per page
Sort by

Send to:

Choose Destination

Results: 1 to 20 of 516

1.

Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy.

Mano T, Abbarchi M, Kuroda T, Mastrandrea CA, Vinattieri A, Sanguinetti S, Sakoda K, Gurioli M.

Nanotechnology. 2009 Sep 30;20(39):395601. doi: 10.1088/0957-4484/20/39/395601. Epub 2009 Sep 2.

PMID:
19724114
[PubMed]
2.

Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer.

Jo M, Mano T, Sakoda K.

Nanotechnology. 2011 Aug 19;22(33):335201. doi: 10.1088/0957-4484/22/33/335201. Epub 2011 Jul 21.

PMID:
21775803
[PubMed]
3.

Low density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths.

Richter D, Hafenbrak R, Jöns KD, Schulz WM, Eichfelder M, Heldmaier M, Rossbach R, Jetter M, Michler P.

Nanotechnology. 2010 Mar 26;21(12):125606. doi: 10.1088/0957-4484/21/12/125606. Epub 2010 Mar 5.

PMID:
20203350
[PubMed]
4.

Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates.

Skiba-Szymanska J, Jamil A, Farrer I, Ward MB, Nicoll CA, Ellis DJ, Griffiths JP, Anderson D, Jones GA, Ritchie DA, Shields AJ.

Nanotechnology. 2011 Feb 11;22(6):065302. doi: 10.1088/0957-4484/22/6/065302. Epub 2011 Jan 7.

PMID:
21212488
[PubMed]
5.

GaSb/GaAs type-II quantum dots grown by droplet epitaxy.

Liang B, Lin A, Pavarelli N, Reyner C, Tatebayashi J, Nunna K, He J, Ochalski TJ, Huyet G, Huffaker DL.

Nanotechnology. 2009 Nov 11;20(45):455604. doi: 10.1088/0957-4484/20/45/455604. Epub 2009 Oct 16.

PMID:
19834245
[PubMed]
6.

Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes.

Heyn C, Klingbeil M, Strelow C, Stemmann A, Mendach S, Hansen W.

Nanoscale Res Lett. 2010 Jul 14;5(10):1633-1636.

PMID:
21076707
[PubMed]
Free PMC Article
7.

Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature.

Benyoucef M, Zuerbig V, Reithmaier JP, Kroh T, Schell AW, Aichele T, Benson O.

Nanoscale Res Lett. 2012 Aug 31;7(1):493. doi: 10.1186/1556-276X-7-493.

PMID:
22937992
[PubMed]
Free PMC Article
8.

Hierarchical self-assembly of GaAs/AlGaAs quantum dots.

Rastelli A, Stufler S, Schliwa A, Songmuang R, Manzano C, Costantini G, Kern K, Zrenner A, Bimberg D, Schmidt OG.

Phys Rev Lett. 2004 Apr 23;92(16):166104. Epub 2004 Apr 21.

PMID:
15169246
[PubMed]
9.

[Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling].

Jia GZ, Yao JH, Zhang CL, Shu Q, Liu RB, Ye XL, Wang ZG.

Guang Pu Xue Yu Guang Pu Fen Xi. 2007 Nov;27(11):2178-81. Chinese.

PMID:
18260388
[PubMed]
10.

InAs quantum dot clusters grown on GaAs droplet templates: surface morphologies and optical properties.

Liang BL, Dorogan VG, Mazur YI, Strom NW, Lee JH, Sablon KA, Wang ZhM, Salamo GJ.

J Nanosci Nanotechnol. 2009 May;9(5):3320-4.

PMID:
19453010
[PubMed]
11.

Dense arrays of ordered pyramidal quantum dots with narrow linewidth photoluminescence spectra.

Surrente A, Gallo P, Felici M, Dwir B, Rudra A, Kapon E.

Nanotechnology. 2009 Oct 14;20(41):415205. doi: 10.1088/0957-4484/20/41/415205. Epub 2009 Sep 18.

PMID:
19762950
[PubMed - indexed for MEDLINE]
12.

Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.

Guimard D, Ishida M, Bordel D, Li L, Nishioka M, Tanaka Y, Ekawa M, Sudo H, Yamamoto T, Kondo H, Sugawara M, Arakawa Y.

Nanotechnology. 2010 Mar 12;21(10):105604. doi: 10.1088/0957-4484/21/10/105604. Epub 2010 Feb 16.

PMID:
20160334
[PubMed]
13.

Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces.

Wu J, Wang ZM, Dorogan VG, Li S, Mazur YI, Salamo GJ.

Nanoscale. 2011 Apr;3(4):1485-8. doi: 10.1039/c0nr00973c. Epub 2011 Mar 8.

PMID:
21384043
[PubMed - indexed for MEDLINE]
14.

Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.

Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.

J Nanosci Nanotechnol. 2007 Aug;7(8):2889-93.

PMID:
17685312
[PubMed - indexed for MEDLINE]
15.

InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm.

Strauss M, Höfling S, Forchel A.

Nanotechnology. 2009 Dec 16;20(50):505601. doi: 10.1088/0957-4484/20/50/505601. Epub 2009 Nov 12.

PMID:
19907066
[PubMed]
16.

Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy.

Bietti S, Somaschini C, Sarti E, Koguchi N, Sanguinetti S, Isella G, Chrastina D, Fedorov A.

Nanoscale Res Lett. 2010 Jul 18;5(10):1650-1653.

PMID:
21076665
[PubMed]
Free PMC Article
17.

Comparative study on InAs/InGaAs dots-in-a-well structure grown on GaAs(311) B and (100) substrates.

Wang L, Li M, Xiong M, Wang W, Gao H, Zhao L.

J Nanosci Nanotechnol. 2010 Nov;10(11):7359-61.

PMID:
21137934
[PubMed]
18.

Microphotoluminescence spectroscopy of single CdTe/ZnTe quantum dots grown on Si001 substrates.

Lee HS, Rastelli A, Benyoucef M, Ding F, Kim TW, Park HL, Schmidt OG.

Nanotechnology. 2009 Feb 18;20(7):075705. doi: 10.1088/0957-4484/20/7/075705. Epub 2009 Jan 26.

PMID:
19417433
[PubMed]
19.

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes.

Heyn C, Stemmann A, Köppen T, Strelow C, Kipp T, Grave M, Mendach S, Hansen W.

Nanoscale Res Lett. 2009 Dec 25;5(3):576-580.

PMID:
20672041
[PubMed]
Free PMC Article
20.

Single site-controlled In(Ga)As/GaAs quantum dots: growth, properties and device integration.

Schneider C, Huggenberger A, Sünner T, Heindel T, Strauss M, Göpfert S, Weinmann P, Reitzenstein S, Worschech L, Kamp M, Höfling S, Forchel A.

Nanotechnology. 2009 Oct 28;20(43):434012. doi: 10.1088/0957-4484/20/43/434012. Epub 2009 Oct 2.

PMID:
19801767
[PubMed]

Display Settings:

Format
Items per page
Sort by

Send to:

Choose Destination

Supplemental Content

Write to the Help Desk