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Results: 1 to 20 of 679

1.

Integration by self-aligned writing of nanocrystal/epoxy composites on InGaN micro-pixelated light-emitting diodes.

Guilhabert B, Elfström D, Kuehne AJ, Massoubre D, Zhang HX, Jin SR, Mackintosh AR, Gu E, Pethrick RA, Dawson MD.

Opt Express. 2008 Nov 10;16(23):18933-41.

PMID:
19581984
[PubMed - indexed for MEDLINE]
2.

The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.

Jang HW, Ryu SW, Yu HK, Lee S, Lee JL.

Nanotechnology. 2010 Jan 15;21(2):025203. doi: 10.1088/0957-4484/21/2/025203. Epub 2009 Dec 3.

PMID:
19955615
[PubMed - indexed for MEDLINE]
3.

A photometric investigation of ultra-efficient LEDs with high color rendering index and high luminous efficacy employing nanocrystal quantum dot luminophores.

Erdem T, Nizamoglu S, Sun XW, Demir HV.

Opt Express. 2010 Jan 4;18(1):340-7. doi: 10.1364/OE.18.000340.

PMID:
20173854
[PubMed - indexed for MEDLINE]
4.

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.

Opt Express. 2011 Jan 17;19(2):1065-71. doi: 10.1364/OE.19.001065.

PMID:
21263645
[PubMed - indexed for MEDLINE]
5.

GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.

Tomioka K, Motohisa J, Hara S, Hiruma K, Fukui T.

Nano Lett. 2010 May 12;10(5):1639-44. doi: 10.1021/nl9041774.

PMID:
20377199
[PubMed - indexed for MEDLINE]
6.

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).

Cho CY, Lee JB, Lee SJ, Han SH, Park TY, Kim JW, Kim YC, Park SJ.

Opt Express. 2010 Jan 18;18(2):1462-8. doi: 10.1364/OE.18.001462.

PMID:
20173974
[PubMed - indexed for MEDLINE]
7.

Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures.

Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N.

Opt Express. 2009 Aug 3;17(16):13747-57.

PMID:
19654782
[PubMed - indexed for MEDLINE]
8.

Evaluation of InGaN/GaN light-emitting diodes of circular geometry.

Wang XH, Fu WY, Lai PT, Choi HW.

Opt Express. 2009 Dec 7;17(25):22311-9. doi: 10.1364/OE.17.022311.

PMID:
20052154
[PubMed - indexed for MEDLINE]
9.

Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.

Seo YG, Baik KH, Song H, Son JS, Oh K, Hwang SM.

Opt Express. 2011 Jul 4;19(14):12919-24. doi: 10.1364/OE.19.012919.

PMID:
21747444
[PubMed - indexed for MEDLINE]
10.

Surface-plasmon-enhanced light emitters based on InGaN quantum wells.

Okamoto K, Niki I, Shvartser A, Narukawa Y, Mukai T, Scherer A.

Nat Mater. 2004 Sep;3(9):601-5. Epub 2004 Aug 22.

PMID:
15322535
[PubMed - indexed for MEDLINE]
11.

Two-dimensional light confinement in periodic InGaN/GaN nanocolumn arrays and optically pumped blue stimulated emission.

Kouno T, Kishino K, Yamano K, Kikuchi A.

Opt Express. 2009 Oct 26;17(22):20440-7. doi: 10.1364/OE.17.020440.

PMID:
19997272
[PubMed - indexed for MEDLINE]
12.

Resonant nonradiative energy transfer in CdSe/ZnS core/shell nanocrystal solids enhances hybrid white light emitting diodes.

Nizamoglu S, Demir HV.

Opt Express. 2008 Sep 1;16(18):13961-8.

PMID:
18773007
[PubMed - indexed for MEDLINE]
13.

Epitaxial growth of InGaN nanowire arrays for light emitting diodes.

Hahn C, Zhang Z, Fu A, Wu CH, Hwang YJ, Gargas DJ, Yang P.

ACS Nano. 2011 May 24;5(5):3970-6. doi: 10.1021/nn200521r. Epub 2011 Apr 25.

PMID:
21495684
[PubMed - indexed for MEDLINE]
14.

Spontaneous emission in GaN/InGaN photonic crystal nanopillars.

David A, Benisty H, Weisbuch C.

Opt Express. 2007 Dec 24;15(26):17991-8004.

PMID:
19551097
[PubMed - indexed for MEDLINE]
15.

GaN nanostructure-based light emitting diodes and semiconductor lasers.

Viswanath AK.

J Nanosci Nanotechnol. 2014 Feb;14(2):1947-82. Review.

PMID:
24749467
[PubMed - indexed for MEDLINE]
16.

Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.

Park YJ, Kim HY, Ryu JH, Kim HK, Kang JH, Han N, Han M, Jeong H, Jeong MS, Hong CH.

Opt Express. 2011 Jan 31;19(3):2029-36. doi: 10.1364/OE.19.002029.

PMID:
21369019
[PubMed - indexed for MEDLINE]
17.

GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.

Chuang LC, Sedgwick FG, Chen R, Ko WS, Moewe M, Ng KW, Tran TT, Chang-Hasnain C.

Nano Lett. 2011 Feb 9;11(2):385-90. doi: 10.1021/nl102988w. Epub 2010 Dec 21.

PMID:
21174451
[PubMed - indexed for MEDLINE]
18.

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.

Son JH, Lee JL.

Opt Express. 2010 Mar 15;18(6):5466-71. doi: 10.1364/OE.18.005466.

PMID:
20389563
[PubMed - indexed for MEDLINE]
19.

Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior.

Madhukar A, Lu S, Konkar A, Zhang Y, Ho M, Hughes SM, Alivisatos AP.

Nano Lett. 2005 Mar;5(3):479-82.

PMID:
15755098
[PubMed - indexed for MEDLINE]
20.

Vertical InGaN light-emitting diodes with a sapphire-face-up structure.

Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK.

Opt Express. 2012 Jan 2;20(1):A119-24.

PMID:
22379672
[PubMed - indexed for MEDLINE]

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