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Results: 1 to 20 of 122

1.

Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.

Liu J, Sun X, Pan D, Wang X, Kimerling LC, Koch TL, Michel J.

Opt Express. 2007 Sep 3;15(18):11272-7.

PMID:
19547484
[PubMed]
2.

Theory for n-type doped, tensile-strained Ge-Si(x)Ge(y)Sn1-x-y quantum-well lasers at telecom wavelength.

Chang GE, Chang SW, Chuang SL.

Opt Express. 2009 Jul 6;17(14):11246-58.

PMID:
19582037
[PubMed]
3.

Infrared absorption of n-type tensile-strained Ge-on-Si.

Wang X, Li H, Camacho-Aguilera R, Cai Y, Kimerling LC, Michel J, Liu J.

Opt Lett. 2013 Mar 1;38(5):652-4. doi: 10.1364/OL.38.000652.

PMID:
23455254
[PubMed]
4.

Direct-gap optical gain of Ge on Si at room temperature.

Liu J, Sun X, Kimerling LC, Michel J.

Opt Lett. 2009 Jun 1;34(11):1738-40.

PMID:
19488166
[PubMed]
5.

Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes.

Sun X, Liu J, Kimerling LC, Michel J.

Opt Lett. 2009 Apr 15;34(8):1198-200.

PMID:
19370116
[PubMed]
6.

Ge-on-Si laser operating at room temperature.

Liu J, Sun X, Camacho-Aguilera R, Kimerling LC, Michel J.

Opt Lett. 2010 Mar 1;35(5):679-81. doi: 10.1364/OL.35.000679.

PMID:
20195317
[PubMed]
7.

Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells.

Pizzi G, Virgilio M, Grosso G.

Nanotechnology. 2010 Feb 5;21(5):055202. doi: 10.1088/0957-4484/21/5/055202. Epub 2009 Dec 21.

PMID:
20023310
[PubMed]
8.

Direct bandgap narrowing in Ge LED's on Si substrates.

Oehme M, Gollhofer M, Widmann D, Schmid M, Kaschel M, Kasper E, Schulze J.

Opt Express. 2013 Jan 28;21(2):2206-11. doi: 10.1364/OE.21.002206.

PMID:
23389201
[PubMed - indexed for MEDLINE]
9.

Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain.

Carroll L, Friedli P, Neuenschwander S, Sigg H, Cecchi S, Isa F, Chrastina D, Isella G, Fedoryshyn Y, Faist J.

Phys Rev Lett. 2012 Aug 3;109(5):057402. Epub 2012 Aug 1.

PMID:
23006206
[PubMed]
10.

Tensilely strained germanium nanomembranes as infrared optical gain media.

Boztug C, Sánchez-Pérez JR, Sudradjat FF, Jacobson RB, Paskiewicz DM, Lagally MG, Paiella R.

Small. 2013 Feb 25;9(4):622-30. doi: 10.1002/smll.201201090. Epub 2012 Nov 2.

PMID:
23125175
[PubMed]
11.

Genomic design of strong direct-gap optical transition in Si/Ge core/multishell nanowires.

Zhang L, d'Avezac M, Luo JW, Zunger A.

Nano Lett. 2012 Feb 8;12(2):984-91. doi: 10.1021/nl2040892. Epub 2012 Jan 17.

PMID:
22216831
[PubMed - indexed for MEDLINE]
12.

Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain.

Peng X, Tang F, Logan P.

J Phys Condens Matter. 2011 Mar 23;23(11):115502. doi: 10.1088/0953-8984/23/11/115502. Epub 2011 Mar 1.

PMID:
21358032
[PubMed]
13.

Strained germanium thin film membrane on silicon substrate for optoelectronics.

Nam D, Sukhdeo D, Roy A, Balram K, Cheng SL, Huang KC, Yuan Z, Brongersma M, Nishi Y, Miller D, Saraswat K.

Opt Express. 2011 Dec 19;19(27):25866-72. doi: 10.1364/OE.19.025866.

PMID:
22274174
[PubMed - indexed for MEDLINE]
14.

Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.

Chen Y, Li C, Lai H, Chen S.

Nanotechnology. 2010 Mar 19;21(11):115207. doi: 10.1088/0957-4484/21/11/115207. Epub 2010 Feb 24.

PMID:
20179329
[PubMed]
15.

Genetic-algorithm discovery of a direct-gap and optically allowed superstructure from indirect-gap Si and Ge semiconductors.

d'Avezac M, Luo JW, Chanier T, Zunger A.

Phys Rev Lett. 2012 Jan 13;108(2):027401. Epub 2012 Jan 12.

PMID:
22324706
[PubMed]
16.

Direct-bandgap light-emitting germanium in tensilely strained nanomembranes.

Sánchez-Pérez JR, Boztug C, Chen F, Sudradjat FF, Paskiewicz DM, Jacobson RB, Lagally MG, Paiella R.

Proc Natl Acad Sci U S A. 2011 Nov 22;108(47):18893-8. doi: 10.1073/pnas.1107968108. Epub 2011 Nov 14.

PMID:
22084063
[PubMed - indexed for MEDLINE]
Free PMC Article
17.

Thermoelectric transport in strained Si and Si/Ge heterostructures.

Hinsche NF, Mertig I, Zahn P.

J Phys Condens Matter. 2012 Jul 11;24(27):275501. doi: 10.1088/0953-8984/24/27/275501. Epub 2012 Jun 19.

PMID:
22713229
[PubMed - indexed for MEDLINE]
18.

Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process.

Capellini G, Reich C, Guha S, Yamamoto Y, Lisker M, Virgilio M, Ghrib A, El Kurdi M, Boucaud P, Tillack B, Schroeder T.

Opt Express. 2014 Jan 13;22(1):399-410. doi: 10.1364/OE.22.000399.

PMID:
24515000
[PubMed]
19.

Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode.

Sun G, Soref RA, Cheng HH.

Opt Express. 2010 Sep 13;18(19):19957-65. doi: 10.1364/OE.18.019957.

PMID:
20940887
[PubMed - indexed for MEDLINE]
20.

Strained-germanium nanostructures for infrared photonics.

Boztug C, Sánchez-Pérez JR, Cavallo F, Lagally MG, Paiella R.

ACS Nano. 2014 Apr 22;8(4):3136-51. doi: 10.1021/nn404739b. Epub 2014 Mar 13.

PMID:
24597822
[PubMed - in process]

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