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Results: 1 to 20 of 113

1.

Optical modulator on silicon employing germanium quantum wells.

Roth JE, Fidaner O, Schaevitz RK, Kuo YH, Kamins TI, Harris JS, Miller DA.

Opt Express. 2007 Apr 30;15(9):5851-9.

PMID:
19532843
[PubMed]
2.

Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators.

Edwards EH, Audet RM, Fei ET, Claussen SA, Schaevitz RK, Tasyurek E, Rong Y, Kamins TI, Harris JS, Miller DA.

Opt Express. 2012 Dec 31;20(28):29164-73. doi: 10.1364/OE.20.029164.

PMID:
23388742
[PubMed]
3.

Design of vertical Ge quantum well asymmetric Fabry-Perot modulator without DBR.

Wei YP, Kuo YH.

Opt Express. 2010 Nov 8;18(23):23576-83. doi: 10.1364/OE.18.023576.

PMID:
21164702
[PubMed]
4.

Strong quantum-confined Stark effect in germanium quantum-well structures on silicon.

Kuo YH, Lee YK, Ge Y, Ren S, Roth JE, Kamins TI, Miller DA, Harris JS.

Nature. 2005 Oct 27;437(7063):1334-6.

PMID:
16251959
[PubMed]
5.

A microelectromechanically tunable asymmetric Fabry-Perot quantum well modulator at 1.55 microm.

Stievater TH, Park D, Pruessner MW, Rabinovich WS, Kanakaraju S, Richardson CJ.

Opt Express. 2008 Oct 13;16(21):16766-73.

PMID:
18852786
[PubMed - indexed for MEDLINE]
6.

1300 nm wavelength InAs quantum dot photodetector grown on silicon.

Sandall I, Ng JS, David JP, Tan CH, Wang T, Liu H.

Opt Express. 2012 May 7;20(10):10446-52. doi: 10.1364/OE.20.010446.

PMID:
22565669
[PubMed - indexed for MEDLINE]
7.

Polarization-insensitive electroabsorption by use of quantum well interdiffusion.

Choy WC, Li EH.

Appl Opt. 1998 Mar 20;37(9):1674-81.

PMID:
18268766
[PubMed]
8.

Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator.

Ngo CY, Yoon SF, Loke WK, Cao Q, Lim DR, Wong V, Sim YK, Chua SJ.

Nanoscale Res Lett. 2008 Dec;3(12):486-490. Epub 2008 Oct 21.

PMID:
20596370
[PubMed]
Free PMC Article
9.

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.

Feng NN, Feng D, Liao S, Wang X, Dong P, Liang H, Kung CC, Qian W, Fong J, Shafiiha R, Luo Y, Cunningham J, Krishnamoorthy AV, Asghari M.

Opt Express. 2011 Apr 11;19(8):7062-7. doi: 10.1364/OE.19.007062.

PMID:
21503018
[PubMed - indexed for MEDLINE]
10.

Laterally coupled silicon-germanium modulator for passive waveguide systems.

Lim PH, Cai J, Ishikawa Y, Wada K.

Opt Lett. 2012 May 1;37(9):1496-8. doi: 10.1364/OL.37.001496.

PMID:
22555716
[PubMed]
11.

Low-loss germanium strip waveguides on silicon for the mid-infrared.

Chang YC, Paeder V, Hvozdara L, Hartmann JM, Herzig HP.

Opt Lett. 2012 Jul 15;37(14):2883-5. doi: 10.1364/OL.37.002883.

PMID:
22825166
[PubMed]
12.

Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells.

Park H, Fang A, Kodama S, Bowers J.

Opt Express. 2005 Nov 14;13(23):9460-4.

PMID:
19503148
[PubMed]
13.

Wavelength optimization of quantum-well modulators in smart pixels.

Boyd GD, Chirovsky LM, Lentine AL, Livescu G.

Appl Opt. 1995 Jan 10;34(2):323-32. doi: 10.1364/AO.34.000323.

PMID:
20963120
[PubMed]
14.

Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells.

Claussen SA, Tasyurek E, Roth JE, Miller DA.

Opt Express. 2010 Dec 6;18(25):25596-607. doi: 10.1364/OE.18.025596.

PMID:
21164905
[PubMed - indexed for MEDLINE]
15.

Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator.

Feng NN, Liao S, Feng D, Wang X, Dong P, Liang H, Kung CC, Qian W, Liu Y, Fong J, Shafiiha R, Luo Y, Cunningham J, Krishnamoorthy AV, Asghari M.

Opt Express. 2011 Apr 25;19(9):8715-20. doi: 10.1364/OE.19.008715.

PMID:
21643123
[PubMed - indexed for MEDLINE]
16.

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator.

Tang Y, Chen HW, Jain S, Peters JD, Westergren U, Bowers JE.

Opt Express. 2011 Mar 28;19(7):5811-6. doi: 10.1364/OE.19.005811.

PMID:
21451605
[PubMed - indexed for MEDLINE]
17.

Integration of hybrid silicon lasers and electroabsorption modulators.

Sysak MN, Anthes JO, Bowers JE, Raday O, Jones R.

Opt Express. 2008 Aug 18;16(17):12478-86.

PMID:
18711484
[PubMed - indexed for MEDLINE]
18.

Silicon-polymer hybrid slot waveguide ring-resonator modulator.

Gould M, Baehr-Jones T, Ding R, Huang S, Luo J, Jen AK, Fedeli JM, Fournier M, Hochberg M.

Opt Express. 2011 Feb 28;19(5):3952-61. doi: 10.1364/OE.19.003952.

PMID:
21369221
[PubMed - indexed for MEDLINE]
19.

Effect of device length and background doping on the relative magnitudes of phase and amplitude modulation in GaAs/AIGaAs PIN multiple quantum well waveguide optical modulators.

Bradley PJ, Whitehead M, Parry G, Mistry P, Roberts JS.

Appl Opt. 1989 Apr 15;28(8):1560-4. doi: 10.1364/AO.28.001560.

PMID:
20548699
[PubMed]
20.

Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon.

Edwards EH, Lever L, Fei ET, Kamins TI, Ikonic Z, Harris JS, Kelsall RW, Miller DA.

Opt Express. 2013 Jan 14;21(1):867-76. doi: 10.1364/OE.21.000867.

PMID:
23388980
[PubMed]

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