Similar articles for PMID: 19423925

Year	Number of Results
1947	1
1961	1
1966	1
1987	1
1991	1
1992	2
2000	1
2002	5
2003	1
2004	7
2005	5
2006	5
2007	15
2008	21
2009	13
2010	24
2011	32
2012	23
2013	39
2014	21
2015	23
2016	23
2017	23
2018	25
2019	31
2020	20
2021	8
2022	20
2023	4
2024	0

1

The mechanism of electroforming of metal oxide memristive switches.

Joshua Yang J, Miao F, Pickett MD, Ohlberg DA, Stewart DR, Lau CN, Williams RS. Joshua Yang J, et al. Nanotechnology. 2009 May 27;20(21):215201. doi: 10.1088/0957-4484/20/21/215201. Epub 2009 May 5. Nanotechnology. 2009. PMID: 19423925 Free article.

2

Memristive switching mechanism for metal/oxide/metal nanodevices.

Yang JJ, Pickett MD, Li X, Ohlberg DA, Stewart DR, Williams RS. Yang JJ, et al. Nat Nanotechnol. 2008 Jul;3(7):429-33. doi: 10.1038/nnano.2008.160. Epub 2008 Jun 15. Nat Nanotechnol. 2008. PMID: 18654568

3

Carrier-mediated magnetoelectricity in complex oxide heterostructures.

Rondinelli JM, Stengel M, Spaldin NA. Rondinelli JM, et al. Nat Nanotechnol. 2008 Jan;3(1):46-50. doi: 10.1038/nnano.2007.412. Epub 2007 Dec 16. Nat Nanotechnol. 2008. PMID: 18654450

4

Electroforming in Metal-Oxide Memristive Synapses.

Wang T, Shi Y, Puglisi FM, Chen S, Zhu K, Zuo Y, Li X, Jing X, Han T, Guo B, Bukvišová K, Kachtík L, Kolíbal M, Wen C, Lanza M. Wang T, et al. ACS Appl Mater Interfaces. 2020 Mar 11;12(10):11806-11814. doi: 10.1021/acsami.9b19362. Epub 2020 Feb 25. ACS Appl Mater Interfaces. 2020. PMID: 32036650

5

Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior.

Strukov DB, Borghetti JL, Williams RS. Strukov DB, et al. Small. 2009 May;5(9):1058-63. doi: 10.1002/smll.200801323. Small. 2009. PMID: 19226597

6

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.

Magyari-Köpe B, Tendulkar M, Park SG, Lee HD, Nishi Y. Magyari-Köpe B, et al. Nanotechnology. 2011 Jun 24;22(25):254029. doi: 10.1088/0957-4484/22/25/254029. Epub 2011 May 16. Nanotechnology. 2011. PMID: 21572196

7

Bistability in a complementary metal oxide semiconductor inverter circuit.

Carroll TL. Carroll TL. Chaos. 2005 Sep;15(3):33103. doi: 10.1063/1.1979213. Chaos. 2005. PMID: 16252977

8

Thin films: theory leads the way to new devices.

Ramesh R. Ramesh R. Nat Nanotechnol. 2008 Jan;3(1):7-8. doi: 10.1038/nnano.2007.430. Nat Nanotechnol. 2008. PMID: 18654438 No abstract available.

9

Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory.

Park IS, Lee JH, Lee S, Ahn J. Park IS, et al. J Nanosci Nanotechnol. 2007 Nov;7(11):4139-42. J Nanosci Nanotechnol. 2007. PMID: 18047136

10

DNA-decorated carbon-nanotube-based chemical sensors on complementary metal oxide semiconductor circuitry.

Chen CL, Yang CF, Agarwal V, Kim T, Sonkusale S, Busnaina A, Chen M, Dokmeci MR. Chen CL, et al. Nanotechnology. 2010 Mar 5;21(9):095504. doi: 10.1088/0957-4484/21/9/095504. Epub 2010 Feb 8. Nanotechnology. 2010. PMID: 20139486

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