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Similar articles for PubMed (Select 19202545)

1.

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide.

Emtsev KV, Bostwick A, Horn K, Jobst J, Kellogg GL, Ley L, McChesney JL, Ohta T, Reshanov SA, Röhrl J, Rotenberg E, Schmid AK, Waldmann D, Weber HB, Seyller T.

Nat Mater. 2009 Mar;8(3):203-7. doi: 10.1038/nmat2382. Epub 2009 Feb 8.

PMID:
19202545
2.

Precise Control of the Number of Layers of Graphene by Picosecond Laser Thinning.

Lin Z, Ye X, Han J, Chen Q, Fan P, Zhang H, Xie D, Zhu H, Zhong M.

Sci Rep. 2015 Jun 26;5:11662. doi: 10.1038/srep11662.

3.

Enhanced response and sensitivity of self-corrugated graphene sensors with anisotropic charge distribution.

Yol Jeong S, Jeong S, Won Lee S, Tae Kim S, Kim D, Jin Jeong H, Tark Han J, Baeg KJ, Yang S, Seok Jeong M, Lee GW.

Sci Rep. 2015 Jun 8;5:11216. doi: 10.1038/srep11216.

4.

Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties.

Melios C, Panchal V, Giusca CE, Strupiński W, Silva SR, Kazakova O.

Sci Rep. 2015 Jun 1;5:10505. doi: 10.1038/srep10505.

5.

Correlating defect density with growth time in continuous graphene films.

Kang C, Jung da H, Nam JE, Lee JS.

J Nanosci Nanotechnol. 2014 Dec;14(12):9169-73.

PMID:
25971031
6.

THz saturable absorption in turbostratic multilayer graphene on silicon carbide.

Bianco F, Miseikis V, Convertino D, Xu JH, Castellano F, Beere HE, Ritchie DA, Vitiello MS, Tredicucci A, Coletti C.

Opt Express. 2015 May 4;23(9):11632-40. doi: 10.1364/OE.23.011632.

PMID:
25969255
7.

Fluorinated graphene dielectric films obtained from functionalized graphene suspension: preparation and properties.

Nebogatikova NA, Antonova IV, Prinz VY, Kurkina II, Vdovin VI, Aleksandrov GN, Timofeev VB, Smagulova SA, Zakirov ER, Kesler VG.

Phys Chem Chem Phys. 2015 May 13;17(20):13257-66. doi: 10.1039/c4cp04646c.

PMID:
25922856
8.

Towards Wafer-Scale Monocrystalline Graphene Growth and Characterization.

Nguyen VL, Lee YH.

Small. 2015 Apr 22. doi: 10.1002/smll.201500147. [Epub ahead of print]

PMID:
25903119
9.

Epitaxial graphene on SiC: modification of structural and electron transport properties by substrate pretreatment.

Kruskopf M, Pierz K, Wundrack S, Stosch R, Dziomba T, Kalmbach CC, Müller A, Baringhaus J, Tegenkamp C, Ahlers FJ, Schumacher HW.

J Phys Condens Matter. 2015 May 13;27(18):185303. doi: 10.1088/0953-8984/27/18/185303. Epub 2015 Apr 20.

PMID:
25894386
10.

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide.

Lafont F, Ribeiro-Palau R, Kazazis D, Michon A, Couturaud O, Consejo C, Chassagne T, Zielinski M, Portail M, Jouault B, Schopfer F, Poirier W.

Nat Commun. 2015 Apr 20;6:6806. doi: 10.1038/ncomms7806.

11.

Long distance spin communication in chemical vapour deposited graphene.

Kamalakar MV, Groenveld C, Dankert A, Dash SP.

Nat Commun. 2015 Apr 10;6:6766. doi: 10.1038/ncomms7766.

12.

Ultraclean patterned transfer of single-layer graphene by recyclable pressure sensitive adhesive films.

Kim SJ, Choi T, Lee B, Lee S, Choi K, Park JB, Yoo JM, Choi YS, Ryu J, Kim P, Hone J, Hong BH.

Nano Lett. 2015 May 13;15(5):3236-40. doi: 10.1021/acs.nanolett.5b00440. Epub 2015 Apr 16.

PMID:
25844634
13.
14.

Sub-terahertz frequency-domain spectroscopy reveals single-grain mobility and scatter influence of large-area graphene.

Cervetti C, Heintze E, Gorshunov B, Zhukova E, Lobanov S, Hoyer A, Burghard M, Kern K, Dressel M, Bogani L.

Adv Mater. 2015 Apr 24;27(16):2635-41. doi: 10.1002/adma.201500599. Epub 2015 Mar 18.

PMID:
25787669
15.

High-quality, single-layered epitaxial graphene fabricated on 6H-SiC (0001) by flash annealing in Pb atmosphere and mechanism.

Hu TW, Liu XT, Ma F, Ma DY, Xu KW, Chu PK.

Nanotechnology. 2015 Mar 13;26(10):105708. doi: 10.1088/0957-4484/26/10/105708. Epub 2015 Feb 20.

PMID:
25697237
16.

Optimized growth of graphene on SiC: from the dynamic flip mechanism.

Wang D, Liu L, Chen W, Chen X, Huang H, He J, Feng YP, Wee AT, Shen DZ.

Nanoscale. 2015 Mar 14;7(10):4522-8. doi: 10.1039/c4nr07197b.

PMID:
25682710
17.

Electronic transport of encapsulated graphene and WSe2 devices fabricated by pick-up of prepatterned hBN.

Wang JI, Yang Y, Chen YA, Watanabe K, Taniguchi T, Churchill HO, Jarillo-Herrero P.

Nano Lett. 2015 Mar 11;15(3):1898-903. doi: 10.1021/nl504750f. Epub 2015 Feb 13.

PMID:
25654184
18.

Pentacene on Ni(111): room-temperature molecular packing and temperature-activated conversion to graphene.

Dinca LE, De Marchi F, MacLeod JM, Lipton-Duffin J, Gatti R, Ma D, Perepichka DF, Rosei F.

Nanoscale. 2015 Feb 21;7(7):3263-9. doi: 10.1039/c4nr07057g.

PMID:
25619890
19.

Two-dimensional mineral [Pb2BiS3][AuTe2]: high-mobility charge carriers in single-atom-thick layers.

Fang L, Im J, Stoumpos CC, Shi F, Dravid V, Leroux M, Freeman AJ, Kwok WK, Chung DY, Kanatzidis M.

J Am Chem Soc. 2015 Feb 18;137(6):2311-7. doi: 10.1021/ja5111688. Epub 2015 Feb 5.

PMID:
25612093
20.

Controlled folding of graphene: GraFold printing.

Hallam T, Shakouri A, Poliani E, Rooney AP, Ivanov I, Potie A, Taylor HK, Bonn M, Turchinovich D, Haigh SJ, Maultzsch J, Duesberg GS.

Nano Lett. 2015 Feb 11;15(2):857-63. doi: 10.1021/nl503460p. Epub 2015 Jan 9.

PMID:
25539448
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