Format
Sort by

Send to

Choose Destination

Links from PubMed

Items: 1 to 20 of 170

1.

Distribution of active impurities in single silicon nanowires.

Imamura G, Kawashima T, Fujii M, Nishimura C, Saitoh T, Hayashi S.

Nano Lett. 2008 Sep;8(9):2620-4. doi: 10.1021/nl080265s. Epub 2008 Aug 14.

PMID:
18700807
2.

Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires.

Wang Y, Lew KK, Ho TT, Pan L, Novak SW, Dickey EC, Redwing JM, Mayer TS.

Nano Lett. 2005 Nov;5(11):2139-43.

PMID:
16277441
3.

Segregation behaviors and radial distribution of dopant atoms in silicon nanowires.

Fukata N, Ishida S, Yokono S, Takiguchi R, Chen J, Sekiguchi T, Murakami K.

Nano Lett. 2011 Feb 9;11(2):651-6. doi: 10.1021/nl103773e. Epub 2011 Jan 24.

PMID:
21261289
4.

Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts.

Yu L, O'Donnell B, Alet PJ, Conesa-Boj S, Peiró F, Arbiol J, Cabarrocas PR.

Nanotechnology. 2009 Jun 3;20(22):225604. doi: 10.1088/0957-4484/20/22/225604. Epub 2009 May 13.

PMID:
19436096
5.

Silicon nanowire oxidation: the influence of sidewall structure and gold distribution.

Sivakov VA, Scholz R, Syrowatka F, Falk F, Gösele U, Christiansen SH.

Nanotechnology. 2009 Oct 7;20(40):405607. doi: 10.1088/0957-4484/20/40/405607. Epub 2009 Sep 8.

PMID:
19738306
6.

Growth time-dependent density and surface evolution of silicon nanowires in a vapor-liquid-solid process.

Lee CY, Kim GS, Lee SY, Kim TH, Seo DW, Lee SK.

J Nanosci Nanotechnol. 2011 Aug;11(8):6946-52.

PMID:
22103103
7.

Doping and Raman characterization of boron and phosphorus atoms in germanium nanowires.

Fukata N, Sato K, Mitome M, Bando Y, Sekiguchi T, Kirkham M, Hong JI, Wang ZL, Snyder RL.

ACS Nano. 2010 Jul 27;4(7):3807-16. doi: 10.1021/nn100734e.

PMID:
20565120
8.

Obtaining uniform dopant distributions in VLS-grown Si nanowires.

Koren E, Hyun JK, Givan U, Hemesath ER, Lauhon LJ, Rosenwaks Y.

Nano Lett. 2011 Jan 12;11(1):183-7. doi: 10.1021/nl103363c. Epub 2010 Dec 3.

PMID:
21126102
9.

Growth of silicon nanowires on H-terminated Si {111} surface templates studied by transmission electron microscopy.

Ozaki N, Ohno Y, Kikkawa J, Takeda S.

J Electron Microsc (Tokyo). 2005;54 Suppl 1:i25-9.

PMID:
16157636
10.

Atomically smooth p-doped silicon nanowires catalyzed by aluminum at low temperature.

Moutanabbir O, Senz S, Scholz R, Alexe M, Kim Y, Pippel E, Wang Y, Wiethoff C, Nabbefeld T, Meyer zu Heringdorf F, Horn-von Hoegen M.

ACS Nano. 2011 Feb 22;5(2):1313-20. doi: 10.1021/nn1030274. Epub 2011 Jan 6.

PMID:
21210666
11.

Control of surface migration of gold particles on Si nanowires.

Kawashima T, Mizutani T, Nakagawa T, Torii H, Saitoh T, Komori K, Fujii M.

Nano Lett. 2008 Jan;8(1):362-8. Epub 2007 Dec 21.

PMID:
18095731
12.

Platinum assisted vapor-liquid-solid growth of er-si nanowires and their optical properties.

Kim MH, Kim IS, Park YH, Park TE, Shin JH, Choi HJ.

Nanoscale Res Lett. 2009 Nov 14;5(2):286-90. doi: 10.1007/s11671-009-9477-5.

13.

Synthesis, morphology and compositional evolution of silicon nanowires directly grown on SnO(2) substrates.

Yu L, Alet PJ, Picardi G, Maurin I, Cabarrocas PR.

Nanotechnology. 2008 Dec 3;19(48):485605. doi: 10.1088/0957-4484/19/48/485605. Epub 2008 Nov 12.

PMID:
21836306
14.

Doping limits of grown in situ doped silicon nanowires using phosphine.

Schmid H, Björk MT, Knoch J, Karg S, Riel H, Riess W.

Nano Lett. 2009 Jan;9(1):173-7. doi: 10.1021/nl802739v.

PMID:
19099512
15.

Measurement of active dopant distribution and diffusion in individual silicon nanowires.

Koren E, Berkovitch N, Rosenwaks Y.

Nano Lett. 2010 Apr 14;10(4):1163-7. doi: 10.1021/nl9033158.

PMID:
20196550
16.

Synthesis and characterization of silicon nanowires on mesophase carbon microbead substrates by chemical vapor deposition.

Li WN, Ding YS, Yuan J, Gomez S, Suib SL, Galasso FS, Dicarlo JF.

J Phys Chem B. 2005 Mar 3;109(8):3291-7.

PMID:
16851355
17.

Ion beam doping of silicon nanowires.

Colli A, Fasoli A, Ronning C, Pisana S, Piscanec S, Ferrari AC.

Nano Lett. 2008 Aug;8(8):2188-93. doi: 10.1021/nl080610d. Epub 2008 Jun 25.

PMID:
18576693
18.

Pressure-induced orientation control of the growth of epitaxial silicon nanowires.

Lugstein A, Steinmair M, Hyun YJ, Hauer G, Pongratz P, Bertagnolli E.

Nano Lett. 2008 Aug;8(8):2310-4. doi: 10.1021/nl8011006. Epub 2008 Jul 12.

PMID:
18624392
19.

Ex situ vapor phase boron doping of silicon nanowires using BBr3.

Doerk GS, Lestari G, Liu F, Carraro C, Maboudian R.

Nanoscale. 2010 Jul;2(7):1165-70. doi: 10.1039/c0nr00127a. Epub 2010 May 22.

PMID:
20648344
20.

Large-area silicon nanowires from silicon monoxide for solar cell applications.

Zhang ML, Mahmood I, Fan X, Xu G, Wong NB.

J Nanosci Nanotechnol. 2010 Dec;10(12):8271-7.

PMID:
21121327
Items per page

Supplemental Content

Write to the Help Desk