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Similar articles for PubMed (Select 18020657)

1.

Single P and As dopants in the Si(001) surface.

Radny MW, Smith PV, Reusch TC, Warschkow O, Marks NA, Shi HQ, McKenzie DR, Schofield SR, Curson NJ, Simmons MY.

J Chem Phys. 2007 Nov 14;127(18):184706.

PMID:
18020657
2.

Electronic effects induced by single hydrogen atoms on the Ge(001) surface.

Radny MW, Shah GA, Smith PV, Schofield SR, Curson NJ.

J Chem Phys. 2008 Jun 28;128(24):244707. doi: 10.1063/1.2938091.

PMID:
18601365
3.

Control and characterization of cyclopentene unimolecular dissociation on Si(100) with scanning tunneling microscopy.

Yoder NL, Fakonas JS, Hersam MC.

J Am Chem Soc. 2009 Jul 29;131(29):10059-65. doi: 10.1021/ja9010546.

PMID:
19572713
4.

First-principles study of thermal and electron-activated dissociation of acetone on Si(001).

Lee JH, Lee JY, Cho JH.

J Chem Phys. 2008 Nov 21;129(19):194110. doi: 10.1063/1.3021075.

PMID:
19026048
5.

Structural and electronic properties of identical-sized Zn nanoclusters grown on Si(111)-(7x7) surfaces.

Zhou C, Xue Q, Jia J, Zhan H, Kang J.

J Chem Phys. 2009 Jan 14;130(2):024701. doi: 10.1063/1.3046682.

PMID:
19154044
6.

Electronic stabilization of the Si(111)5 × 2-Au surface: Pb and Si adatoms.

Stępniak A, Krawiec M, Zawadzki G, Jałochowski M.

J Phys Condens Matter. 2012 Mar 7;24(9):095002. doi: 10.1088/0953-8984/24/9/095002. Epub 2012 Jan 25.

PMID:
22274993
7.

First principles study of Si-doped BC2N nanotubes.

Rupp CJ, Rossato J, Baierle RJ.

J Chem Phys. 2009 Mar 21;130(11):114710. doi: 10.1063/1.3089357.

PMID:
19317558
8.

Selective scanning tunnelling microscope electron-induced reactions of single biphenyl molecules on a Si(100) surface.

Riedel D, Bocquet ML, Lesnard H, Lastapis M, Lorente N, Sonnet P, Dujardin G.

J Am Chem Soc. 2009 Jun 3;131(21):7344-52. doi: 10.1021/ja8101133.

PMID:
19425577
9.

Manipulating Chlorine Atom Bonding on the Si(100)-(2 x 1) Surface with the STM.

Boland JJ.

Science. 1993 Dec 10;262(5140):1703-6.

PMID:
17781787
10.

Identifying atomic geometry and electronic structure of (2 x 3)-Sr/Si(100) surface and its initial oxidation.

Du W, Wang B, Xu L, Hu Z, Cui X, Pan BC, Yang J, Hou JG.

J Chem Phys. 2008 Oct 28;129(16):164707. doi: 10.1063/1.3001580.

PMID:
19045298
11.

Dopant-pair structures segregated on a hydrogen-terminated Si(100) surface.

Suwa Y, Matsuura S, Fujimori M, Heike S, Onogi T, Kajiyama H, Hitosugi T, Kitazawa K, Uda T, Hashizume T.

Phys Rev Lett. 2003 Apr 18;90(15):156101. Epub 2003 Apr 14.

PMID:
12732053
12.

Direct and indirect causes of Fermi level pinning at the SiO/GaAs interface.

Winn DL, Hale MJ, Grassman TJ, Kummel AC, Droopad R, Passlack M.

J Chem Phys. 2007 Feb 28;126(8):084703.

PMID:
17343465
13.

Competitive segregation of Si and P on Fe(96.5)Si(3.5) (100) and (110).

Biedermann A, Schmid M, Reichl BM, Varga P.

Anal Bioanal Chem. 1995 Oct;353(3-4):259-62.

PMID:
15048478
14.

Electronic mechanism of STM-induced diffusion of hydrogen on Si(100).

Stokbro K, Quaade UJ, Lin R, Thirstrup C, Grey F.

Faraday Discuss. 2000;(117):231-40; discussion 257-75.

PMID:
11271994
15.

Simulation of scanning tunneling microscope images of 1,3-cyclohexadiene bound to a silicon surface.

Galperin M, Beratan DN.

J Phys Chem B. 2005 Feb 3;109(4):1473-80.

PMID:
16851118
16.

Nanoscale imaging of electronic surface transport probed by atom movements induced by scanning tunneling microscope current.

Nakamura Y, Mera Y, Maeda K.

Phys Rev Lett. 2002 Dec 23;89(26):266805. Epub 2002 Dec 12.

PMID:
12484850
17.

Tip-induced reduction of the resonant tunneling current on semiconductor surfaces.

Jelínek P, Svec M, Pou P, Perez R, Cháb V.

Phys Rev Lett. 2008 Oct 24;101(17):176101. Epub 2008 Oct 21.

PMID:
18999766
18.

Dopant-assisted concentration enhancement of substitutional Mn in Si and Ge.

Zhu W, Zhang Z, Kaxiras E.

Phys Rev Lett. 2008 Jan 18;100(2):027205. Epub 2008 Jan 17.

PMID:
18232917
19.

Identification of the products from the reaction of chlorine with the silicon(111)-(7x7) surface.

Boland JJ, Villarrubia JS.

Science. 1990 May 18;248(4957):838-40.

PMID:
17811833
20.

HREELS, STM, and STS study of CH(3)-terminated Si(111)-(1x1) surface.

Yamada T, Kawai M, Wawro A, Suto S, Kasuya A.

J Chem Phys. 2004 Dec 1;121(21):10660-7.

PMID:
15549950
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