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Similar articles for PubMed (Select 17654989)

1.

Nanostructuring of InP surface by low-energy ion beam irradiation.

Mohanta SK, Soni RK, Tripathy S, Chua SJ, Kanjilal D.

J Nanosci Nanotechnol. 2007 Jun;7(6):2046-50.

PMID:
17654989
2.

Structural and optical characterization of strained free-standing InP nanowires.

González JC, da Silva MI, Lozano XS, Zanchet D, Ugarte D, Ribeiro E, Gutiérrez HR, Cotta MA.

J Nanosci Nanotechnol. 2006 Jul;6(7):2182-6.

PMID:
17025146
3.

Sol-gel synthesis of luminescent InP nanocrystals embedded in silica glasses.

Yang H, Huang D, Wang X, Gu X, Wang F, Xie S, Yao X.

J Nanosci Nanotechnol. 2005 Oct;5(10):1737-40.

PMID:
16245538
4.

The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation.

Antonova IV, Gulyaev MB, Cherkov AG, Volodin VA, Marin DV, Skuratov VA, Jedrzejewski J, Balberg I.

Nanotechnology. 2009 Mar 4;20(9):095205. doi: 10.1088/0957-4484/20/9/095205. Epub 2009 Feb 6.

PMID:
19417483
5.

The creation of sub-10 nm In(PO3)3 nanocrystals in an insulating matrix, and underlying formation mechanisms.

Yuk JM, Kim TW, Lee JY, No YS, Kim DH, Choi WK, Jin S.

Nanotechnology. 2009 Feb 4;20(5):055703. doi: 10.1088/0957-4484/20/5/055703. Epub 2009 Jan 12.

PMID:
19417362
6.

Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.

Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.

Small. 2006 Mar;2(3):386-9. No abstract available. Erratum in: Small. 2006 May;2(5):587.

PMID:
17193056
7.

Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates.

Aagesen M, Johnson E, Sørensen CB, Mariager SO, Feidenhans'l R, Spiecker E, Nygård J, Lindelof PE.

Nat Nanotechnol. 2007 Dec;2(12):761-4. doi: 10.1038/nnano.2007.378. Epub 2007 Nov 25.

PMID:
18654427
8.

Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation.

Antonova IV, Cherkov AG, Skuratov VA, Kagan MS, Jedrzejewski J, Balberg I.

Nanotechnology. 2009 May 6;20(18):185401. doi: 10.1088/0957-4484/20/18/185401. Epub 2009 Apr 14.

PMID:
19420612
9.

Electrostatic spin control in InAs/InP nanowire quantum dots.

Romeo L, Roddaro S, Pitanti A, Ercolani D, Sorba L, Beltram F.

Nano Lett. 2012 Sep 12;12(9):4490-4. doi: 10.1021/nl301497j. Epub 2012 Aug 6.

PMID:
22849393
10.

Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions.

Fakhr A, Haddara YM, Lapierre RR.

Nanotechnology. 2010 Apr 23;21(16):165601. doi: 10.1088/0957-4484/21/16/165601. Epub 2010 Mar 26.

PMID:
20348594
11.

The scaling of the effective band gaps in indium-arsenide quantum dots and wires.

Wang F, Yu H, Jeong S, Pietryga JM, Hollingsworth JA, Gibbons PC, Buhro WE.

ACS Nano. 2008 Sep 23;2(9):1903-13. doi: 10.1021/nn800356z.

PMID:
19206431
12.

Two- versus three-dimensional quantum confinement in indium phosphide wires and dots.

Yu H, Li J, Loomis RA, Wang LW, Buhro WE.

Nat Mater. 2003 Aug;2(8):517-20.

PMID:
12872161
13.

In situ observation of heterogeneous growth of CdSe quantum dots: effect of indium doping on the growth kinetics.

Tuinenga C, Jasinski J, Iwamoto T, Chikan V.

ACS Nano. 2008 Jul;2(7):1411-21. doi: 10.1021/nn700377q.

PMID:
19206309
14.

Surface functionalized carbogenic quantum dots.

Bourlinos AB, Stassinopoulos A, Anglos D, Zboril R, Karakassides M, Giannelis EP.

Small. 2008 Apr;4(4):455-8. doi: 10.1002/smll.200700578. No abstract available.

PMID:
18350555
15.

Growth and characterization of InP nanowires with InAsP insertions.

Tchernycheva M, Cirlin GE, Patriarche G, Travers L, Zwiller V, Perinetti U, Harmand JC.

Nano Lett. 2007 Jun;7(6):1500-4. Epub 2007 May 5.

PMID:
17480113
16.

Low-frequency Raman scattering from nanocrystals caused by coherent excitation of phonons.

Wu XL, Xiong SJ, Sun LT, Shen JC, Chu PK.

Small. 2009 Dec;5(24):2823-6. doi: 10.1002/smll.200901579. No abstract available.

PMID:
19882689
17.

Three-dimensional Si/Ge quantum dot crystals.

Grützmacher D, Fromherz T, Dais C, Stangl J, Müller E, Ekinci Y, Solak HH, Sigg H, Lechner RT, Wintersberger E, Birner S, Holý V, Bauer G.

Nano Lett. 2007 Oct;7(10):3150-6. Epub 2007 Sep 25.

PMID:
17892317
18.

Effect of oxidation induced surface state formation on the properties of colloidal CdSe quantum dots.

Sharma H, Sharma SN, Singh G, Shivaprasad SM.

J Nanosci Nanotechnol. 2007 Jun;7(6):1953-9.

PMID:
17654971
19.

Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates.

Cui K, Fathololoumi S, Golam Kibria M, Botton GA, Mi Z.

Nanotechnology. 2012 Mar 2;23(8):085205. doi: 10.1088/0957-4484/23/8/085205. Epub 2012 Feb 1.

PMID:
22293649
20.

Comparative Raman and HRTEM study of nanostructured GaN nucleation layers and device layers on sapphire (0001).

Pant P, Narayan J, Wushuer A, Manghnani MH.

J Nanosci Nanotechnol. 2008 Nov;8(11):5985-92.

PMID:
19198336
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