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Similar articles for PubMed (Select 12944626)

1.

Ge quantum dots structural peculiarities depending on the preparation conditions.

Erenburg S, Bausk N, Mazalov L, Nikiforov A, Yakimov A.

J Synchrotron Radiat. 2003 Sep 1;10(Pt 5):380-3. Epub 2003 Aug 28.

PMID:
12944626
2.

Three-dimensional Si/Ge quantum dot crystals.

Grützmacher D, Fromherz T, Dais C, Stangl J, Müller E, Ekinci Y, Solak HH, Sigg H, Lechner RT, Wintersberger E, Birner S, Holý V, Bauer G.

Nano Lett. 2007 Oct;7(10):3150-6. Epub 2007 Sep 25.

PMID:
17892317
3.

Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots.

Nassiopoulou AG, Olzierski A, Tsoi E, Berbezier I, Karmous A.

J Nanosci Nanotechnol. 2007 Jan;7(1):316-21.

PMID:
17455497
4.

Stranski-Krastanow growth of germanium on silicon nanowires.

Pan L, Lew KK, Redwing JM, Dickey EC.

Nano Lett. 2005 Jun;5(6):1081-5.

PMID:
15943447
5.

Diffusion in Si(x)Ge(1-x)/Si nanowire heterostructures.

Zhang X, Kulik J, Dickey EC.

J Nanosci Nanotechnol. 2007 Feb;7(2):717-20.

PMID:
17450821
6.

A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor.

Hu Y, Churchill HO, Reilly DJ, Xiang J, Lieber CM, Marcus CM.

Nat Nanotechnol. 2007 Oct;2(10):622-5. doi: 10.1038/nnano.2007.302. Epub 2007 Sep 30.

PMID:
18654386
7.

Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires.

Zhang X, Lew KK, Nimmatoori P, Redwing JM, Dickey EC.

Nano Lett. 2007 Oct;7(10):3241-5. Epub 2007 Sep 26.

PMID:
17894516
8.

Extended defect states of Ge/Si quantum dots using optical isothermal capacitance transient spectroscopy.

Kwak DW, Park CJ, Lee YH, Kim WS, Cho HY.

Nanotechnology. 2009 Feb 4;20(5):055201. doi: 10.1088/0957-4484/20/5/055201. Epub 2009 Jan 9.

PMID:
19417338
9.
10.

Fluorescence X-ray absorption spectroscopy using a Ge pixel array detector: application to high-temperature superconducting thin-film single crystals.

Oyanagi H, Tsukada A, Naito M, Saini NL, Lampert MO, Gutknecht D, Dressler P, Ogawa S, Kasai K, Mohamed S, Fukano A.

J Synchrotron Radiat. 2006 Jul;13(Pt 4):314-20. Epub 2006 Jun 15.

PMID:
16799222
11.

Anisotropic thermal conductivity of Ge quantum-dot and symmetrically strained Si/Ge superlattices.

Liu WL, Borca-Tasciuc T, Chen G, Liu JL, Wang KL.

J Nanosci Nanotechnol. 2001 Mar;1(1):39-42.

PMID:
12914029
12.

Behaviors of surfactant atoms on Si(001) surface.

Matsuhata H, Sakamoto K, Miki K.

J Electron Microsc (Tokyo). 2004;53(4):325-37.

PMID:
15582932
13.

Nonthermal plasma synthesized freestanding silicon-germanium alloy nanocrystals.

Pi XD, Kortshagen U.

Nanotechnology. 2009 Jul 22;20(29):295602. doi: 10.1088/0957-4484/20/29/295602. Epub 2009 Jul 1.

PMID:
19567968
14.

Gold-catalyzed oxide nanopatterns for the directed assembly of Ge island arrays on Si.

Robinson JT, Ratto F, Moutanabbir O, Heun S, Locatelli A, Mentes TO, Aballe L, Dubon OD.

Nano Lett. 2007 Sep;7(9):2655-9. Epub 2007 Aug 2.

PMID:
17672506
15.

Impact of annealing on surface morphology and photoluminescence of self-assembled Ge and Si quantum dots.

Samavati A, Othaman Z, Dabagh S, Ghoshal SK.

J Nanosci Nanotechnol. 2014 Jul;14(7):5266-71.

PMID:
24758014
16.
18.

Misfit-guided self-organization of anticorrelated Ge quantum dot arrays on Si nanowires.

Kwon S, Chen ZC, Kim JH, Xiang J.

Nano Lett. 2012 Sep 12;12(9):4757-62. doi: 10.1021/nl302190e. Epub 2012 Aug 16.

19.

Microstructure of Mo/Si multilayers with B4C diffusion barrier layers.

Nedelcu I, van de Kruijs RW, Yakshin AE, Bijkerk F.

Appl Opt. 2009 Jan 10;48(2):155-60.

PMID:
19137023
20.

On the formation and photoluminescence of Si(1-x)Ge(x) nanoparticles.

Chen PJ, Tsai MY, Chi CC, Perng TP.

J Nanosci Nanotechnol. 2007 Sep;7(9):3340-3.

PMID:
18019172
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