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Results: 1 to 20 of 118

1.

Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride.

Quah HJ, Cheong KY.

Nanoscale Res Lett. 2013 Jan 29;8(1):53. doi: 10.1186/1556-276X-8-53.

PMID:
23360596
[PubMed]
Free PMC Article
2.

Retardation mechanism of ultrathin Al2O3 interlayer on Y2O3 passivated gallium nitride surface.

Quah HJ, Cheong KY.

ACS Appl Mater Interfaces. 2014 May 28;6(10):7797-805. doi: 10.1021/am501075s. Epub 2014 Apr 17.

PMID:
24712438
[PubMed - in process]
3.

Surface passivation of gallium nitride by ultrathin RF-magnetron sputtered Al2O3 gate.

Quah HJ, Cheong KY.

ACS Appl Mater Interfaces. 2013 Aug 14;5(15):6860-3. doi: 10.1021/am402333t. Epub 2013 Jul 24.

PMID:
23876173
[PubMed]
4.

Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si.

Wong YH, Cheong KY.

Nanoscale Res Lett. 2011 Aug 10;6:489. doi: 10.1186/1556-276X-6-489.

PMID:
21831264
[PubMed]
Free PMC Article
5.

The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.

Park S, Bang S, Lee S, Park J, Ko Y, Jeon H.

J Nanosci Nanotechnol. 2011 Jul;11(7):6029-33.

PMID:
22121652
[PubMed]
6.

Structure and electrical properties of sputtered TiO2/ZrO2 bilayer composite dielectrics upon annealing in nitrogen.

Dong M, Wang H, Ye C, Shen L, Wang Y, Zhang J, Ye Y.

Nanoscale Res Lett. 2012 Jan 5;7:31. doi: 10.1186/1556-276X-7-31.

PMID:
22221384
[PubMed]
Free PMC Article
8.

[Influence of annealing and sputtering ambience on the photoluminescence of silicon nitride thin films].

Jia XY, Xu Z, Zhao SL, Zhang FJ, Zhao DW, Tang Y, Li Y, Zhou CL, Wang WJ.

Guang Pu Xue Yu Guang Pu Fen Xi. 2008 Nov;28(11):2494-7. Chinese.

PMID:
19271474
[PubMed]
9.

Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors.

Huang YC, Yang PY, Huang HY, Wang SJ, Cheng HC.

J Nanosci Nanotechnol. 2012 Jul;12(7):5625-30.

PMID:
22966622
[PubMed]
10.

Design of energy band alignment at the Zn(1-x)Mg(x)O/Cu(In,Ga)Se2 interface for Cd-free Cu(In,Ga)Se2 solar cells.

Lee CS, Larina L, Shin YM, Al-Ammar EA, Ahn BT.

Phys Chem Chem Phys. 2012 Apr 14;14(14):4789-95. doi: 10.1039/c2cp40355b. Epub 2012 Mar 1.

PMID:
22382807
[PubMed]
11.

Electrical and optical characteristics of n-Zno/p-GaN hetero-junction diode fabricated by ultra-high vacuum sputter.

Cho SG, Lee DU, Kim EK.

J Nanosci Nanotechnol. 2013 Sep;13(9):6443-6.

PMID:
24205679
[PubMed]
12.

Enhancement of field-emission properties in ZnO nanowire array by post-annealing in H2 ambient.

Park KS, Choi YJ, Ahn MW, Kim DW, Sung YM, Park JG, Choi KJ.

J Nanosci Nanotechnol. 2009 Jul;9(7):4328-32.

PMID:
19916451
[PubMed]
13.

Substrate biasing effect on the physical properties of reactive RF-magnetron-sputtered aluminum oxide dielectric films on ITO glasses.

Liang LY, Cao HT, Liu Q, Jiang KM, Liu ZM, Zhuge F, Deng FL.

ACS Appl Mater Interfaces. 2014 Feb 26;6(4):2255-61. doi: 10.1021/am4055589. Epub 2014 Feb 12.

PMID:
24490685
[PubMed - in process]
14.

Interfacial reaction and electrical properties of HfO2 film gate dielectric prepared by pulsed laser deposition in nitrogen: role of rapid thermal annealing and gate electrode.

Wang Y, Wang H, Ye C, Zhang J, Wang H, Jiang Y.

ACS Appl Mater Interfaces. 2011 Oct;3(10):3813-8. doi: 10.1021/am2008695. Epub 2011 Sep 27.

PMID:
21910462
[PubMed]
15.

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

Kang YS, Kim DK, Kang HK, Jeong KS, Cho MH, Ko DH, Kim H, Seo JH, Kim DC.

ACS Appl Mater Interfaces. 2014 Mar 26;6(6):3896-906. doi: 10.1021/am4049496. Epub 2014 Mar 12.

PMID:
24467437
[PubMed - in process]
16.

Investigation of the flatband voltage (V(FB)) shift of Al2O3 on N2 plasma treated Si substrate.

Kim H, Lee J, Jeon H, Park J, Jeon H.

J Nanosci Nanotechnol. 2013 Sep;13(9):6275-9.

PMID:
24205644
[PubMed]
17.
18.

Effect of doping (C or N) and co-doping (C+N) on the photoactive properties of magnetron sputtered titania coatings for the application of solar water-splitting.

Rahman M, Dang BH, McDonnell K, MacElroy JM, Dowling DP.

J Nanosci Nanotechnol. 2012 Jun;12(6):4729-35.

PMID:
22905523
[PubMed - indexed for MEDLINE]
19.

The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes.

Alvi NH, Ul Hasan K, Nur O, Willander M.

Nanoscale Res Lett. 2011 Feb 10;6(1):130. doi: 10.1186/1556-276X-6-130.

PMID:
21711671
[PubMed]
Free PMC Article
20.

Influence of deposition pressure on N-doped ZnO films by RF magnetron sputtering.

Wang J, Elamurugu E, Franco N, Alves E, Botelho do Rego AM, Gonçalves G, Martins R, Fortunato E.

J Nanosci Nanotechnol. 2010 Apr;10(4):2674-8.

PMID:
20355483
[PubMed]

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