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Similar articles for PubMed (Select 23075073)

1.

Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity.

Balkan N, Tiras E, Erol A, Gunes M, Ardali S, Arikan M, Lagarde D, Carrère H, Marie X, Gumus C.

Nanoscale Res Lett. 2012 Oct 18;7(1):574. doi: 10.1186/1556-276X-7-574.

2.

The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys.

Donmez O, Gunes M, Erol A, Arikan CM, Balkan N, Schaff WJ.

Nanoscale Res Lett. 2012 Aug 31;7(1):490. doi: 10.1186/1556-276X-7-490.

3.

Positron annihilation on defects in silicon irradiated with 15 MeV protons.

Arutyunov NY, Elsayed M, Krause-Rehberg R, Emtsev VV, Oganesyan GA, Kozlovski VV.

J Phys Condens Matter. 2013 Jan 23;25(3):035801. doi: 10.1088/0953-8984/25/3/035801. Epub 2012 Dec 10.

PMID:
23221281
4.
6.

The dependence of low-energy electron attachment to CF3Br on electron and vibrational energy.

Marienfeld S, Sunagawa T, Fabrikant II, Braun M, Ruf MW, Hotop H.

J Chem Phys. 2006 Apr 21;124(15):154316.

PMID:
16674235
7.

Study on the Low Temperature Photoluminescence Spectra of II-VI Group Telluride Bulk Crystals.

Xu YD, Liu H, He YH, Zhou Y, Jie WQ.

Guang Pu Xue Yu Guang Pu Fen Xi. 2015 Mar;35(3):582-6.

PMID:
26117858
8.

CsSnI3: Semiconductor or metal? High electrical conductivity and strong near-infrared photoluminescence from a single material. High hole mobility and phase-transitions.

Chung I, Song JH, Im J, Androulakis J, Malliakas CD, Li H, Freeman AJ, Kenney JT, Kanatzidis MG.

J Am Chem Soc. 2012 May 23;134(20):8579-87. doi: 10.1021/ja301539s. Epub 2012 May 11.

PMID:
22578072
9.

Low temperature photoluminescence characteristics of chemically synthesized indium doped zinc oxide nanostructures.

Escobedo Morales A, Aceves R, Pal U, Zhang JZ.

J Nanosci Nanotechnol. 2008 Dec;8(12):6538-44.

PMID:
19205237
10.

Electron-phonon interaction and charge carrier mass enhancement in SrTiO3.

van Mechelen JL, van der Marel D, Grimaldi C, Kuzmenko AB, Armitage NP, Reyren N, Hagemann H, Mazin II.

Phys Rev Lett. 2008 Jun 6;100(22):226403. Epub 2008 Jun 6.

PMID:
18643435
11.

Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays.

Hong CC, Ahn H, Wu CY, Gwo S.

Opt Express. 2009 Sep 28;17(20):17227-33. doi: 10.1364/OE.17.017227.

PMID:
19907509
12.
13.

Electronic transport in n- and p-type modulation doped Ga(x)In(1-x)N(y)As(1-y)/ GaAs quantum wells.

Sun Y, Balkan N, Aslan M, Lisesivdin SB, Carrere H, Arikan MC, Marie X.

J Phys Condens Matter. 2009 Apr 29;21(17):174210. doi: 10.1088/0953-8984/21/17/174210. Epub 2009 Apr 1.

PMID:
21825414
14.

Infrared hall effect in high- T(c) superconductors: evidence for non-fermi-liquid hall scattering

Cerne J, Grayson M, Schmadel DC, Jenkins GS, Drew HD, Hughes R, Dabkowski A, Preston JS, Kung P.

Phys Rev Lett. 2000 Apr 10;84(15):3418-21.

PMID:
11019104
15.

An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells.

Sarcan F, Donmez O, Gunes M, Erol A, Arikan MC, Puustinen J, Guina M.

Nanoscale Res Lett. 2012 Sep 25;7(1):529. doi: 10.1186/1556-276X-7-529.

16.

Illumination intensity dependence of the photovoltage in nanostructured TiO2 dye-sensitized solar cells.

Salvador P, Hidalgo MG, Zaban A, Bisquert J.

J Phys Chem B. 2005 Aug 25;109(33):15915-26.

PMID:
16853020
17.

Analysis of the Hall effect in TlGaTe(2) single crystals.

Qasrawi AF, Gasanly NM.

J Phys Condens Matter. 2009 Jun 10;21(23):235802. doi: 10.1088/0953-8984/21/23/235802. Epub 2009 May 15.

PMID:
21825596
18.

Ab initio studies of hydrogen and acceptor defects in rutile TiO(2).

Bjørheim TS, Stølen S, Norby T.

Phys Chem Chem Phys. 2010 Jul 7;12(25):6817-25. doi: 10.1039/b925823j. Epub 2010 May 7.

PMID:
20454724
19.
20.

Temperature-dependent Raman scattering of multiferroic Pb(Fe(1/2)Nb(1/2))O₃.

García-Flores AF, Tenne DA, Choi YJ, Ren WJ, Xi XX, Cheong SW.

J Phys Condens Matter. 2011 Jan 12;23(1):015401. doi: 10.1088/0953-8984/23/1/015401. Epub 2010 Dec 6.

PMID:
21406823
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