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Items: 1 to 20 of 101

1.

Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity.

Balkan N, Tiras E, Erol A, Gunes M, Ardali S, Arikan M, Lagarde D, Carrère H, Marie X, Gumus C.

Nanoscale Res Lett. 2012 Oct 18;7(1):574. doi: 10.1186/1556-276X-7-574.

2.

The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys.

Donmez O, Gunes M, Erol A, Arikan CM, Balkan N, Schaff WJ.

Nanoscale Res Lett. 2012 Aug 31;7(1):490. doi: 10.1186/1556-276X-7-490.

3.

Positron annihilation on defects in silicon irradiated with 15 MeV protons.

Arutyunov NY, Elsayed M, Krause-Rehberg R, Emtsev VV, Oganesyan GA, Kozlovski VV.

J Phys Condens Matter. 2013 Jan 23;25(3):035801. doi: 10.1088/0953-8984/25/3/035801. Epub 2012 Dec 10.

PMID:
23221281
4.
6.

The dependence of low-energy electron attachment to CF3Br on electron and vibrational energy.

Marienfeld S, Sunagawa T, Fabrikant II, Braun M, Ruf MW, Hotop H.

J Chem Phys. 2006 Apr 21;124(15):154316.

PMID:
16674235
7.

Study on the Low Temperature Photoluminescence Spectra of II-VI Group Telluride Bulk Crystals.

Xu YD, Liu H, He YH, Zhou Y, Jie WQ.

Guang Pu Xue Yu Guang Pu Fen Xi. 2015 Mar;35(3):582-6.

PMID:
26117858
8.

CsSnI3: Semiconductor or metal? High electrical conductivity and strong near-infrared photoluminescence from a single material. High hole mobility and phase-transitions.

Chung I, Song JH, Im J, Androulakis J, Malliakas CD, Li H, Freeman AJ, Kenney JT, Kanatzidis MG.

J Am Chem Soc. 2012 May 23;134(20):8579-87. doi: 10.1021/ja301539s. Epub 2012 May 11.

PMID:
22578072
9.

Low temperature photoluminescence characteristics of chemically synthesized indium doped zinc oxide nanostructures.

Escobedo Morales A, Aceves R, Pal U, Zhang JZ.

J Nanosci Nanotechnol. 2008 Dec;8(12):6538-44.

PMID:
19205237
10.

Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays.

Hong CC, Ahn H, Wu CY, Gwo S.

Opt Express. 2009 Sep 28;17(20):17227-33. doi: 10.1364/OE.17.017227.

PMID:
19907509
11.
12.

Electronic transport in n- and p-type modulation doped Ga(x)In(1-x)N(y)As(1-y)/ GaAs quantum wells.

Sun Y, Balkan N, Aslan M, Lisesivdin SB, Carrere H, Arikan MC, Marie X.

J Phys Condens Matter. 2009 Apr 29;21(17):174210. doi: 10.1088/0953-8984/21/17/174210. Epub 2009 Apr 1.

PMID:
21825414
13.

An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells.

Sarcan F, Donmez O, Gunes M, Erol A, Arikan MC, Puustinen J, Guina M.

Nanoscale Res Lett. 2012 Sep 25;7(1):529. doi: 10.1186/1556-276X-7-529.

14.

Illumination intensity dependence of the photovoltage in nanostructured TiO2 dye-sensitized solar cells.

Salvador P, Hidalgo MG, Zaban A, Bisquert J.

J Phys Chem B. 2005 Aug 25;109(33):15915-26.

PMID:
16853020
15.

Analysis of the Hall effect in TlGaTe(2) single crystals.

Qasrawi AF, Gasanly NM.

J Phys Condens Matter. 2009 Jun 10;21(23):235802. doi: 10.1088/0953-8984/21/23/235802. Epub 2009 May 15.

PMID:
21825596
16.

Ab initio studies of hydrogen and acceptor defects in rutile TiO(2).

Bjørheim TS, Stølen S, Norby T.

Phys Chem Chem Phys. 2010 Jul 7;12(25):6817-25. doi: 10.1039/b925823j. Epub 2010 May 7.

PMID:
20454724
17.
18.

Temperature-dependent Raman scattering of multiferroic Pb(Fe(1/2)Nb(1/2))O₃.

García-Flores AF, Tenne DA, Choi YJ, Ren WJ, Xi XX, Cheong SW.

J Phys Condens Matter. 2011 Jan 12;23(1):015401. doi: 10.1088/0953-8984/23/1/015401. Epub 2010 Dec 6.

PMID:
21406823
19.

The defect and transport properties of acceptor doped TlBr: role of dopant exsolution and association.

Bishop SR, Tuller HL, Ciampi G, Higgins W, Engel J, Churilov A, Shah KS.

Phys Chem Chem Phys. 2012 Aug 7;14(29):10160-7. doi: 10.1039/c2cp41044c. Epub 2012 Jun 21.

PMID:
22722657
20.

Enhanced photoluminescence and field-emission behavior of vertically well aligned arrays of In-doped ZnO Nanowires.

Ahmad M, Sun H, Zhu J.

ACS Appl Mater Interfaces. 2011 Apr;3(4):1299-305. doi: 10.1021/am200099c. Epub 2011 Mar 23.

PMID:
21410190
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