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Results: 1 to 20 of 305

1.

Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes.

Ahn J, Park H, Mastro MA, Hite JK, Eddy CR Jr, Kim J.

Opt Express. 2011 Dec 19;19(27):26006-10. doi: 10.1364/OE.19.026006.

PMID:
22274189
[PubMed - indexed for MEDLINE]
2.

Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide.

Liang HK, Yu SF, Yang HY.

Opt Express. 2010 Feb 15;18(4):3687-92. doi: 10.1364/OE.18.003687.

PMID:
20389378
[PubMed - indexed for MEDLINE]
3.

Integration of ZnO microcrystals with tailored dimensions forming light emitting diodes and UV photovoltaic cells.

Cole JJ, Wang X, Knuesel RJ, Jacobs HO.

Nano Lett. 2008 May;8(5):1477-81. doi: 10.1021/nl0804809. Epub 2008 Apr 12.

PMID:
18407698
[PubMed - indexed for MEDLINE]
4.

Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays.

Chen MT, Lu MP, Wu YJ, Song J, Lee CY, Lu MY, Chang YC, Chou LJ, Wang ZL, Chen LJ.

Nano Lett. 2010 Nov 10;10(11):4387-93. doi: 10.1021/nl101907h. Epub 2010 Oct 12.

PMID:
20939582
[PubMed - indexed for MEDLINE]
5.

Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes.

Oh S, Shin KS, Kim SW, Lee S, Yu H, Cho S, Kim KK.

J Nanosci Nanotechnol. 2013 May;13(5):3696-9.

PMID:
23858930
[PubMed - indexed for MEDLINE]
6.

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer.

Zhang L, Li Q, Shang L, Wang F, Qu C, Zhao F.

Opt Express. 2013 Jul 15;21(14):16578-83. doi: 10.1364/OE.21.016578.

PMID:
23938509
[PubMed - indexed for MEDLINE]
7.

Flexible inorganic nanowire light-emitting diode.

Nadarajah A, Word RC, Meiss J, Könenkamp R.

Nano Lett. 2008 Feb;8(2):534-7. doi: 10.1021/nl072784l. Epub 2008 Jan 26.

PMID:
18220439
[PubMed - indexed for MEDLINE]
8.

Nanoparticle-coated n-ZnO/p-Si photodiodes with improved photoresponsivities and acceptance angles for potential solar cell applications.

Chen CP, Lin PH, Chen LY, Ke MY, Cheng YW, Huang J.

Nanotechnology. 2009 Jun 17;20(24):245204. doi: 10.1088/0957-4484/20/24/245204. Epub 2009 May 26.

PMID:
19468172
[PubMed - indexed for MEDLINE]
9.

Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer.

Choi YS, Kang JW, Kim BH, Na DK, Lee SJ, Park SJ.

Opt Express. 2013 May 20;21(10):11698-704. doi: 10.1364/OE.21.011698.

PMID:
23736392
[PubMed - indexed for MEDLINE]
10.

GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.

Tomioka K, Motohisa J, Hara S, Hiruma K, Fukui T.

Nano Lett. 2010 May 12;10(5):1639-44. doi: 10.1021/nl9041774.

PMID:
20377199
[PubMed - indexed for MEDLINE]
11.

Laterally-current-injected light-emitting diodes based on nanocrystalline-Si/SiO2 superlattice.

Ding L, Yu MB, Tu X, Lo GQ, Tripathy S, Chen TP.

Opt Express. 2011 Jan 31;19(3):2729-38. doi: 10.1364/OE.19.002729.

PMID:
21369094
[PubMed - indexed for MEDLINE]
12.

Enhanced electroluminescence from nanoscale silicon p+ -n junctions made with an anodic aluminum oxide pattern.

Hong T, Chen T, Ran GZ, Wen J, Li YZ, Dai T, Qin GG.

Nanotechnology. 2010 Jan 15;21(2):025301. doi: 10.1088/0957-4484/21/2/025301. Epub 2009 Dec 3.

PMID:
19955614
[PubMed - indexed for MEDLINE]
13.

An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition.

Subannajui K, Güder F, Danhof J, Menzel A, Yang Y, Kirste L, Wang C, Cimalla V, Schwarz U, Zacharias M.

Nanotechnology. 2012 Jun 15;23(23):235607. doi: 10.1088/0957-4484/23/23/235607.

PMID:
22609898
[PubMed - indexed for MEDLINE]
14.

Fabrication and optical property of vertically-aligned ZnO/Si double nanostructures.

Ko YH, Chung KS, Yu JS.

J Nanosci Nanotechnol. 2012 Jun;12(6):4570-6.

PMID:
22905502
[PubMed - indexed for MEDLINE]
15.

Influence of substrates in ZnO devices on the surface plasmon enhanced light emission.

Cheng P, Li D, Yang D.

Opt Express. 2008 Jun 9;16(12):8896-901.

PMID:
18545602
[PubMed - indexed for MEDLINE]
16.

Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires.

Kim K, Moon T, Kim S.

J Nanosci Nanotechnol. 2011 Jul;11(7):6025-8.

PMID:
22121651
[PubMed]
17.

UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers.

Ke MY, Lu TC, Yang SC, Chen CP, Cheng YW, Chen LY, Chen CY, He JH, Huang J.

Opt Express. 2009 Dec 7;17(25):22912-7. doi: 10.1364/OE.17.022912.

PMID:
20052218
[PubMed - indexed for MEDLINE]
18.

Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions.

Wang CD, Jha SK, Chen ZH, Ng TW, Liu YK, Yuen MF, Lu ZZ, Kwok SY, Zapien JA, Bello I, Lee CS, Zhang WJ.

J Nanosci Nanotechnol. 2012 Jun;12(6):4560-3.

PMID:
22905500
[PubMed - indexed for MEDLINE]
19.

Sputtered ZnO-SiO2 nanocomposite light-emitting diodes with flat-top nanosecond laser treatment.

Chen JT, Lai WC, Chen CH, Yang YY, Sheu JK, Lin KW, Lai LW.

Opt Express. 2012 Aug 27;20(18):19635-42. doi: 10.1364/OE.20.019635.

PMID:
23037016
[PubMed - indexed for MEDLINE]
20.

ZnO1-x nanorod arrays/ZnO thin film bilayer structure: from homojunction diode and high-performance memristor to complementary 1D1R application.

Huang CH, Huang JS, Lin SM, Chang WY, He JH, Chueh YL.

ACS Nano. 2012 Sep 25;6(9):8407-14. Epub 2012 Sep 6.

PMID:
22900519
[PubMed - indexed for MEDLINE]

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