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Results: 1 to 20 of 98

Related Citations for PubMed (Select 21711943)

1.

Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands.

Das S, Das K, Singha RK, Manna S, Dhar A, Ray SK, Raychaudhuri AK.

Nanoscale Res Lett. 2011 Jun 9;6(1):416. doi: 10.1186/1556-276X-6-416.

2.

Shape and size distribution of molecular beam epitaxy grown self-assembled Ge islands on Si (001) substrates.

Singha RK, Das S, Das K, Majumdar S, Dhar A, Ray SK.

J Nanosci Nanotechnol. 2008 Aug;8(8):4101-5.

PMID:
19049183
3.

Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates.

Hackl F, Grydlik M, Brehm M, Groiss H, Schäffler F, Fromherz T, Bauer G.

Nanotechnology. 2011 Apr 22;22(16):165302. doi: 10.1088/0957-4484/22/16/165302. Epub 2011 Mar 11.

PMID:
21393825
4.

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands.

Brehm M, Grydlik M, Hackl F, Lausecker E, Fromherz T, Bauer G.

Nanoscale Res Lett. 2010 Aug 5;5(12):1868-1872.

5.

Si rib waveguide photodetector with an ordered array of Ge islands for 1.5 microm.

Lavchiev V, Holly R, Chen G, Schäffler F, Goldhahn R, Jantsch W.

Opt Lett. 2009 Dec 15;34(24):3785-7. doi: 10.1364/OL.34.003785.

PMID:
20016613
6.

Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates.

Grydlik M, Langer G, Fromherz T, Schäffler F, Brehm M.

Nanotechnology. 2013 Mar 15;24(10):105601. doi: 10.1088/0957-4484/24/10/105601. Epub 2013 Feb 15.

PMID:
23416837
7.

Photoluminescence efficiency and size distribution of self assembled ge dots on porous TiO2.

Rowell NL, Lockwood DJ, Amiard G, Favre L, Ronda A, Berbezier I, Faustini M, Grosso D.

J Nanosci Nanotechnol. 2011 Oct;11(10):9190-5.

PMID:
22400322
8.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Bollani M, Chrastina D, Fedorov A, Sordan R, Picco A, Bonera E.

Nanotechnology. 2010 Nov 26;21(47):475302. doi: 10.1088/0957-4484/21/47/475302. Epub 2010 Oct 29.

PMID:
21030775
9.

Ordered Arrays of SiGe Islands from Low-Energy PECVD.

Bollani M, Bonera E, Chrastina D, Fedorov A, Montuori V, Picco A, Tagliaferri A, Vanacore G, Sordan R.

Nanoscale Res Lett. 2010 Sep 7;5(12):1917-1920.

10.

Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides.

Ray SK, Das S, Singha RK, Manna S, Dhar A.

Nanoscale Res Lett. 2011 Mar 15;6(1):224. doi: 10.1186/1556-276X-6-224.

11.

Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface.

Vanacore GM, Zani M, Bollani M, Colombo D, Isella G, Osmond J, Sordan R, Tagliaferri A.

Nanoscale Res Lett. 2010 Sep 30;5(12):1921-1925.

12.

The fabrication and application of patterned Si(001) substrates with ordered pits via nanosphere lithography.

Chen P, Fan Y, Zhong Z.

Nanotechnology. 2009 Mar 4;20(9):095303. doi: 10.1088/0957-4484/20/9/095303. Epub 2009 Feb 6.

PMID:
19417486
13.

[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).

Liao XZ, Zou J, Cockayne DJ, Matsumura S.

Ultramicroscopy. 2004 Jan;98(2-4):239-47.

PMID:
15046804
14.

Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots.

Nassiopoulou AG, Olzierski A, Tsoi E, Berbezier I, Karmous A.

J Nanosci Nanotechnol. 2007 Jan;7(1):316-21.

PMID:
17455497
15.

Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions.

Wang Y, Liao Z, Xu H, Xiu F, Kou X, Wang Y, Wang KL, Drennan J, Zou J.

Nanoscale Res Lett. 2011 Dec 12;6:624. doi: 10.1186/1556-276X-6-624.

16.

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

He J, Yadavalli K, Zhao Z, Li N, Hao Z, Wang KL, Jacob AP.

Nanotechnology. 2008 Nov 12;19(45):455607. doi: 10.1088/0957-4484/19/45/455607. Epub 2008 Oct 9.

PMID:
21832784
17.

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001).

Yakimov AI, Nikiforov AI, Dvurechenskii AV, Ulyanov VV, Volodin VA, Groetzschel R.

Nanotechnology. 2006 Sep 28;17(18):4743-7. doi: 10.1088/0957-4484/17/18/036. Epub 2006 Sep 1.

PMID:
21727607
18.

Composition and strain measurements of Ge(Si)/Si(001) islands by HRTEM.

Lin JH, Wu YQ, Tang S, Fan YL, Yang XJ, Jiang ZM, Zou J.

J Nanosci Nanotechnol. 2009 Apr;9(4):2753-7.

PMID:
19438031
19.

Three-dimensional control of self-assembled quantum dot configurations.

Yakes MK, Cress CD, Tischler JG, Bracker AS.

ACS Nano. 2010 Jul 27;4(7):3877-82. doi: 10.1021/nn100623q.

PMID:
20557120
20.

Formation and characterization of multilayer GeSi nanowires on miscut Si (001) substrates.

Gong H, Chen P, Ma Y, Wang L, Rastelli A, Schmidt OG, Zhong Z.

J Nanosci Nanotechnol. 2013 Feb;13(2):834-8.

PMID:
23646525
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