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Results: 1 to 20 of 135

1.

The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes.

Alvi NH, Ul Hasan K, Nur O, Willander M.

Nanoscale Res Lett. 2011 Feb 10;6(1):130. doi: 10.1186/1556-276X-6-130.

PMID:
21711671
[PubMed]
Free PMC Article
2.

White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode.

Sadaf JR, Israr M, Kishwar S, Nur O, Willander M.

Nanoscale Res Lett. 2010 Apr 4;5(6):957-60. doi: 10.1007/s11671-010-9588-z.

PMID:
20672120
[PubMed]
Free PMC Article
3.

Influence of helium-ion bombardment on the optical properties of ZnO nanorods/p-GaN light-emitting diodes.

Alvi NU, Hussain S, Jensen J, Nur O, Willander M.

Nanoscale Res Lett. 2011 Dec 12;6(1):628. doi: 10.1186/1556-276X-6-628.

PMID:
22152066
[PubMed]
Free PMC Article
4.

Nanointerlayer induced electroluminescence transition from ultraviolet- to red-dominant mode for n-Mn:ZnO/N-GaN heterojunction.

Zhou H, Fang G, Jiang Q, Zhu Y, Liu N, Zou X, Mo X, Liu Y, Wang J, Meng X, Zhao X.

ACS Appl Mater Interfaces. 2012 May;4(5):2521-4. doi: 10.1021/am300223y. Epub 2012 May 11.

PMID:
22551404
[PubMed]
5.

GaN/ZnO nanorod light emitting diodes with different emission spectra.

Ng AM, Xi YY, Hsu YF, Djurisić AB, Chan WK, Gwo S, Tam HL, Cheah KW, Fong PW, Lui HF, Surya C.

Nanotechnology. 2009 Nov 4;20(44):445201. doi: 10.1088/0957-4484/20/44/445201. Epub 2009 Oct 5.

PMID:
19801783
[PubMed]
6.

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence.

Abbasi MA, Ibupoto ZH, Hussain M, Nur O, Willander M.

Nanoscale Res Lett. 2013 Jul 13;8(1):320. doi: 10.1186/1556-276X-8-320.

PMID:
23849302
[PubMed]
Free PMC Article
7.

Electroluminescence and rectifying properties of heterojunction LEDs based on ZnO nanorods.

Rout CS, Rao CN.

Nanotechnology. 2008 Jul 16;19(28):285203. doi: 10.1088/0957-4484/19/28/285203. Epub 2008 Jun 2.

PMID:
21828727
[PubMed]
8.

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

Willander M, Nur O, Zhao QX, Yang LL, Lorenz M, Cao BQ, Zúñiga Pérez J, Czekalla C, Zimmermann G, Grundmann M, Bakin A, Behrends A, Al-Suleiman M, El-Shaer A, Che Mofor A, Postels B, Waag A, Boukos N, Travlos A, Kwack HS, Guinard J, Le Si Dang D.

Nanotechnology. 2009 Aug 19;20(33):332001. doi: 10.1088/0957-4484/20/33/332001. Epub 2009 Jul 28.

PMID:
19636090
[PubMed]
9.

Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices.

Chen JT, Lai WC, Chen CH, Yang YY, Sheu JK, Lai LW.

Opt Express. 2011 Jun 6;19(12):11873-9. doi: 10.1364/OE.19.011873.

PMID:
21716420
[PubMed]
10.

n-ZnO nanorods/p+-Si (111) heterojunction light emitting diodes.

Tsai JK, Shih JH, Wu TC, Meen TH.

Nanoscale Res Lett. 2012 Dec 6;7(1):664. doi: 10.1186/1556-276X-7-664.

PMID:
23216651
[PubMed]
Free PMC Article
11.

Enhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays.

Yin Z, Liu X, Wu Y, Hao X, Xu X.

Opt Express. 2012 Jan 16;20(2):1013-21. doi: 10.1364/OE.20.001013.

PMID:
22274448
[PubMed - indexed for MEDLINE]
12.

Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

Chien JF, Liao HY, Yu SF, Lin RM, Shiojiri M, Shyue JJ, Chen MJ.

ACS Appl Mater Interfaces. 2013 Jan 23;5(2):227-32. doi: 10.1021/am301799j. Epub 2012 Dec 31.

PMID:
23259506
[PubMed]
13.

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction.

Du CF, Lee CH, Cheng CT, Lin KH, Sheu JK, Hsu HC.

Nanoscale Res Lett. 2014 Aug 28;9(1):446. doi: 10.1186/1556-276X-9-446. eCollection 2014.

PMID:
25232299
[PubMed]
Free PMC Article
14.

Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes.

Fang F, Zhao D, Li B, Zhang Z, Shen D.

Phys Chem Chem Phys. 2010 Jul 7;12(25):6759-62. doi: 10.1039/b919079a. Epub 2010 May 11.

PMID:
20458408
[PubMed]
15.

Effects of thermal annealing in oxygen plasma for buffer layers on properties of ZnO thin films.

Kim GS, Kim MS, Choi HY, Cho MY, Yim KG, Leem JY.

J Nanosci Nanotechnol. 2011 Oct;11(10):8859-63.

PMID:
22400272
[PubMed]
16.

Enhancement of light output power in GaN-based light-emitting diodes using hydrothermally grown ZnO micro-walls.

Jeong H, Kim YH, Seo TH, Lee HS, Kim JS, Suh EK, Jeong MS.

Opt Express. 2012 May 7;20(10):10597-604. doi: 10.1364/OE.20.010597.

PMID:
22565686
[PubMed - indexed for MEDLINE]
17.

Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability.

Jha S, Qian JC, Kutsay O, Kovac J Jr, Luan CY, Zapien JA, Zhang W, Lee ST, Bello I.

Nanotechnology. 2011 Jun 17;22(24):245202. doi: 10.1088/0957-4484/22/24/245202. Epub 2011 Apr 21.

PMID:
21508502
[PubMed]
18.

MgZnO nanowires based deep ultraviolet heterojunction light emitting diodes.

Chu S, Zhao S, Xiong Z, Chu G.

J Nanosci Nanotechnol. 2011 Oct;11(10):8527-31.

PMID:
22400219
[PubMed]
19.

Effect of annealing treatment on electroluminescence from GaN/Si nanoheterostructure array.

Han CB, He C, Meng XB, Wan YR, Tian YT, Zhang YJ, Li XJ.

Opt Express. 2012 Feb 27;20(5):5636-43. doi: 10.1364/OE.20.005636.

PMID:
22418371
[PubMed - indexed for MEDLINE]
20.

Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires.

Kim K, Moon T, Kim S.

J Nanosci Nanotechnol. 2011 Jul;11(7):6025-8.

PMID:
22121651
[PubMed]

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