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Similar articles for PubMed (Select 21263645)

1.

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.

Opt Express. 2011 Jan 17;19(2):1065-71. doi: 10.1364/OE.19.001065.

PMID:
21263645
2.

The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.

Jang HW, Ryu SW, Yu HK, Lee S, Lee JL.

Nanotechnology. 2010 Jan 15;21(2):025203. doi: 10.1088/0957-4484/21/2/025203. Epub 2009 Dec 3.

PMID:
19955615
3.

Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.

Park YJ, Kim HY, Ryu JH, Kim HK, Kang JH, Han N, Han M, Jeong H, Jeong MS, Hong CH.

Opt Express. 2011 Jan 31;19(3):2029-36. doi: 10.1364/OE.19.002029.

PMID:
21369019
4.

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).

Cho CY, Lee JB, Lee SJ, Han SH, Park TY, Kim JW, Kim YC, Park SJ.

Opt Express. 2010 Jan 18;18(2):1462-8. doi: 10.1364/OE.18.001462.

PMID:
20173974
5.

High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.

Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.

Opt Express. 2012 Apr 23;20(9):9999-10003. doi: 10.1364/OE.20.009999.

PMID:
22535092
6.

Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.

Jang LW, Ju JW, Jeon DW, Park JW, Polyakov AY, Lee SJ, Baek JH, Lee SM, Cho YH, Lee IH.

Opt Express. 2012 Mar 12;20(6):6036-41. doi: 10.1364/OE.20.006036.

PMID:
22418481
7.

A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.

Park H, Baik KH, Kim J, Ren F, Pearton SJ.

Opt Express. 2013 May 20;21(10):12908-13. doi: 10.1364/OE.21.012908.

PMID:
23736510
8.

Vertical InGaN light-emitting diodes with a sapphire-face-up structure.

Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK.

Opt Express. 2012 Jan 2;20(1):A119-24.

PMID:
22379672
9.

Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes.

Oh S, Shin KS, Kim SW, Lee S, Yu H, Cho S, Kim KK.

J Nanosci Nanotechnol. 2013 May;13(5):3696-9.

PMID:
23858930
10.

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.

Li Q, Westlake KR, Crawford MH, Lee SR, Koleske DD, Figiel JJ, Cross KC, Fathololoumi S, Mi Z, Wang GT.

Opt Express. 2011 Dec 5;19(25):25528-34. doi: 10.1364/OE.19.025528.

PMID:
22273946
11.

Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.

Jia C, Yu T, Lu H, Zhong C, Sun Y, Tong Y, Zhang G.

Opt Express. 2013 Apr 8;21(7):8444-9. doi: 10.1364/OE.21.008444.

PMID:
23571934
12.

Epitaxial growth of InGaN nanowire arrays for light emitting diodes.

Hahn C, Zhang Z, Fu A, Wu CH, Hwang YJ, Gargas DJ, Yang P.

ACS Nano. 2011 May 24;5(5):3970-6. doi: 10.1021/nn200521r. Epub 2011 Apr 25.

PMID:
21495684
13.

Surface-plasmon-enhanced light emitters based on InGaN quantum wells.

Okamoto K, Niki I, Shvartser A, Narukawa Y, Mukai T, Scherer A.

Nat Mater. 2004 Sep;3(9):601-5. Epub 2004 Aug 22.

PMID:
15322535
14.

Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.

Sun B, Zhao L, Wei T, Yi X, Liu Z, Wang G, Li J, Yi F.

Opt Express. 2012 Aug 13;20(17):18537-44. doi: 10.1364/OE.20.018537.

PMID:
23038492
15.

Evaluation of InGaN/GaN light-emitting diodes of circular geometry.

Wang XH, Fu WY, Lai PT, Choi HW.

Opt Express. 2009 Dec 7;17(25):22311-9. doi: 10.1364/OE.17.022311.

PMID:
20052154
16.

Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures.

Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N.

Opt Express. 2009 Aug 3;17(16):13747-57.

PMID:
19654782
17.

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.

Son JH, Lee JL.

Opt Express. 2010 Mar 15;18(6):5466-71. doi: 10.1364/OE.18.005466.

PMID:
20389563
18.

GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.

Tomioka K, Motohisa J, Hara S, Hiruma K, Fukui T.

Nano Lett. 2010 May 12;10(5):1639-44. doi: 10.1021/nl9041774.

PMID:
20377199
19.

Integration by self-aligned writing of nanocrystal/epoxy composites on InGaN micro-pixelated light-emitting diodes.

Guilhabert B, Elfström D, Kuehne AJ, Massoubre D, Zhang HX, Jin SR, Mackintosh AR, Gu E, Pethrick RA, Dawson MD.

Opt Express. 2008 Nov 10;16(23):18933-41.

PMID:
19581984
20.

GaN nanostructure-based light emitting diodes and semiconductor lasers.

Viswanath AK.

J Nanosci Nanotechnol. 2014 Feb;14(2):1947-82. Review.

PMID:
24749467
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