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Items: 1 to 20 of 312

1.

High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters.

Kim SK, Lee JW, Ee HS, Moon YT, Kwon SH, Kwon H, Park HG.

Opt Express. 2010 May 24;18(11):11025-32. doi: 10.1364/OE.18.011025.

PMID:
20588958
2.

Coherent vertical beaming using Bragg mirrors for high-efficiency GaN light-emitting diodes.

Kim SK, Park HG.

Opt Express. 2013 Jun 17;21(12):14566-72. doi: 10.1364/OE.21.014566.

PMID:
23787644
3.

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).

Cho CY, Lee JB, Lee SJ, Han SH, Park TY, Kim JW, Kim YC, Park SJ.

Opt Express. 2010 Jan 18;18(2):1462-8. doi: 10.1364/OE.18.001462.

PMID:
20173974
4.

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.

Chen JT, Lai WC, Kao YJ, Yang YY, Sheu JK.

Opt Express. 2012 Feb 27;20(5):5689-95. doi: 10.1364/OE.20.005689.

PMID:
22418376
5.

Vertical InGaN light-emitting diodes with a sapphire-face-up structure.

Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK.

Opt Express. 2012 Jan 2;20(1):A119-24.

PMID:
22379672
6.

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.

Opt Express. 2011 Jan 17;19(2):1065-71. doi: 10.1364/OE.19.001065.

PMID:
21263645
7.

The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.

Jang HW, Ryu SW, Yu HK, Lee S, Lee JL.

Nanotechnology. 2010 Jan 15;21(2):025203. doi: 10.1088/0957-4484/21/2/025203. Epub 2009 Dec 3.

PMID:
19955615
8.

Design of polarization-selective light emitters using one-dimensional metal grating mirror.

Ee HS, Kim SK, Kwon SH, Park HG.

Opt Express. 2011 Jan 17;19(2):1609-16. doi: 10.1364/OE.19.001609.

PMID:
21263700
9.

Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks.

Kim SJ, Kim KH, Kim TG.

Opt Express. 2013 Apr 8;21(7):8062-8. doi: 10.1364/OE.21.008062.

PMID:
23571896
10.

High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.

Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.

Opt Express. 2012 Apr 23;20(9):9999-10003. doi: 10.1364/OE.20.009999.

PMID:
22535092
11.

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.

Son JH, Lee JL.

Opt Express. 2010 Mar 15;18(6):5466-71. doi: 10.1364/OE.18.005466.

PMID:
20389563
12.

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

Zhang ZH, Tan ST, Liu W, Ju Z, Zheng K, Kyaw Z, Ji Y, Hasanov N, Sun XW, Demir HV.

Opt Express. 2013 Feb 25;21(4):4958-69. doi: 10.1364/OE.21.004958. Erratum in: Opt Express. 2013 Jul 29;21(15):17670.

PMID:
23482028
13.

Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.

Sun B, Zhao L, Wei T, Yi X, Liu Z, Wang G, Li J, Yi F.

Opt Express. 2012 Aug 13;20(17):18537-44. doi: 10.1364/OE.20.018537.

PMID:
23038492
14.

Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode.

Yum WS, Jeon JW, Sung JS, Seong TY.

Opt Express. 2012 Aug 13;20(17):19194-9. doi: 10.1364/OE.20.019194.

PMID:
23038560
15.

Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.

Nguyen HP, Cui K, Zhang S, Djavid M, Korinek A, Botton GA, Mi Z.

Nano Lett. 2012 Mar 14;12(3):1317-23. doi: 10.1021/nl203860b. Epub 2012 Feb 2.

PMID:
22283508
16.

Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals.

Lai CF, Chi JY, Kuo HC, Yen HH, Lee CE, Chao CH, Hsueh HT, Yeh WY.

Opt Express. 2009 May 25;17(11):8795-804.

PMID:
19466129
17.

Azimuthally isotropic irradiance of GaN-based light-emitting diodes with GaN microlens arrays.

Wu ML, Lee YC, Yang SP, Lee PS, Chang JY.

Opt Express. 2009 Apr 13;17(8):6148-55.

PMID:
19365437
18.

Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes.

Oh S, Shin KS, Kim SW, Lee S, Yu H, Cho S, Kim KK.

J Nanosci Nanotechnol. 2013 May;13(5):3696-9.

PMID:
23858930
19.

Evaluation of InGaN/GaN light-emitting diodes of circular geometry.

Wang XH, Fu WY, Lai PT, Choi HW.

Opt Express. 2009 Dec 7;17(25):22311-9. doi: 10.1364/OE.17.022311.

PMID:
20052154
20.

Improvement of light extraction efficiency of GaN-based light-emitting diodes using Ag nanostructure and indium tin oxide grating.

Dang S, Li C, Jia W, Zhang Z, Li T, Han P, Xu B.

Opt Express. 2012 Oct 8;20(21):23290-9. doi: 10.1364/OE.20.023290.

PMID:
23188292
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