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1.

Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching.

Huang Z, Zhang X, Reiche M, Liu L, Lee W, Shimizu T, Senz S, Gösele U.

Nano Lett. 2008 Sep;8(9):3046-51. doi: 10.1021/nl802324y. Epub 2008 Aug 13.

PMID:
18698834
2.

Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred <100> etching directions.

Huang Z, Shimizu T, Senz S, Zhang Z, Zhang X, Lee W, Geyer N, Gösele U.

Nano Lett. 2009 Jul;9(7):2519-25. doi: 10.1021/nl803558n.

PMID:
19480399
3.

Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching.

Geyer N, Huang Z, Fuhrmann B, Grimm S, Reiche M, Nguyen-Duc TK, de Boor J, Leipner HS, Werner P, Gösele U.

Nano Lett. 2009 Sep;9(9):3106-10. doi: 10.1021/nl900751g.

PMID:
19655719
4.

Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching.

de Boor J, Geyer N, Wittemann JV, Gösele U, Schmidt V.

Nanotechnology. 2010 Mar 5;21(9):095302. doi: 10.1088/0957-4484/21/9/095302. Epub 2010 Jan 29.

PMID:
20110585
5.

Silicon nanowires with controlled sidewall profile and roughness fabricated by thin-film dewetting and metal-assisted chemical etching.

Azeredo BP, Sadhu J, Ma J, Jacobs K, Kim J, Lee K, Eraker JH, Li X, Sinha S, Fang N, Ferreira P, Hsu K.

Nanotechnology. 2013 Jun 7;24(22):225305. doi: 10.1088/0957-4484/24/22/225305. Epub 2013 May 3.

PMID:
23644697
6.

Large-area highly-oriented SiC nanowire arrays: synthesis, Raman, and photoluminescence properties.

Li Z, Zhang J, Meng A, Guo J.

J Phys Chem B. 2006 Nov 16;110(45):22382-6.

PMID:
17091978
7.

Antibiofouling, sustained antibiotic release by Si nanowire templates.

Brammer KS, Choi C, Oh S, Cobb CJ, Connelly LS, Loya M, Kong SD, Jin S.

Nano Lett. 2009 Oct;9(10):3570-4. doi: 10.1021/nl901769m.

PMID:
19637854
8.

Synthesis and characterization of silicon nanowires on mesophase carbon microbead substrates by chemical vapor deposition.

Li WN, Ding YS, Yuan J, Gomez S, Suib SL, Galasso FS, Dicarlo JF.

J Phys Chem B. 2005 Mar 3;109(8):3291-7.

PMID:
16851355
9.

Matrix-free laser desorption/ionization mass spectrometry on silicon nanowire arrays prepared by chemical etching of crystalline silicon.

Piret G, Drobecq H, Coffinier Y, Melnyk O, Boukherroub R.

Langmuir. 2010 Jan 19;26(2):1354-61. doi: 10.1021/la902266x.

PMID:
20067318
10.

Antireflective silicon surface with vertical-aligned silicon nanowires realized by simple wet chemical etching processes.

Hung YJ, Lee SL, Wu KC, Tai Y, Pan YT.

Opt Express. 2011 Aug 15;19(17):15792-802. doi: 10.1364/OE.19.015792.

PMID:
21934941
11.

Vertically aligned carbon-nanotube arrays showing Schottky behavior at room temperature.

Jung SH, Jeong SH, Kim SU, Hwang SK, Lee PS, Lee KH, Ko JH, Bae E, Kang D, Park W, Oh H, Kim JJ, Kim H, Park CG.

Small. 2005 May;1(5):553-9.

PMID:
17193485
12.

Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: evidences for light localization effect.

Osminkina LA, Gonchar KA, Marshov VS, Bunkov KV, Petrov DV, Golovan LA, Talkenberg F, Sivakov VA, Timoshenko VY.

Nanoscale Res Lett. 2012 Sep 25;7(1):524. doi: 10.1186/1556-276X-7-524.

13.

Nanowire arrays in multicrystalline silicon thin films on glass: a promising material for research and applications in nanotechnology.

Schmitt SW, Schechtel F, Amkreutz D, Bashouti M, Srivastava SK, Hoffmann B, Dieker C, Spiecker E, Rech B, Christiansen SH.

Nano Lett. 2012 Aug 8;12(8):4050-4. doi: 10.1021/nl301419q. Epub 2012 Jul 26.

PMID:
22823245
14.

Structure of assemblies of metal nanowires in mesoporous alumina membranes studied by EXAFS, XANES, X-ray diffraction and SAXS.

Benfield RE, Grandjean D, Dore JC, Esfahanian H, Wu Z, Kröll M, Geerkens M, Schmid G.

Faraday Discuss. 2004;125:327-42; discussion 391-407.

PMID:
14750679
15.

Low-temperature vapour-liquid-solid (VLS) growth of vertically aligned silicon oxide nanowires using concurrent ion bombardment.

Bettge M, MacLaren S, Burdin S, Wen JG, Abraham D, Petrov I, Sammann E.

Nanotechnology. 2009 Mar 18;20(11):115607. doi: 10.1088/0957-4484/20/11/115607. Epub 2009 Feb 25.

PMID:
19420447
16.

Large-area silicon nanowires from silicon monoxide for solar cell applications.

Zhang ML, Mahmood I, Fan X, Xu G, Wong NB.

J Nanosci Nanotechnol. 2010 Dec;10(12):8271-7.

PMID:
21121327
17.

Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemical etching of silicon.

Zuo Z, Cui G, Shi Y, Liu Y, Ji G.

Nanoscale Res Lett. 2013 Apr 26;8(1):193. doi: 10.1186/1556-276X-8-193.

18.

Lift-off patterning of thin Au films on Si surfaces with atomic force microscopy

Moon WC, Yoshinobu T, Iwasaki H.

Ultramicroscopy. 2000 Feb;82(1-4):119-23.

PMID:
10741660
19.

Silicon nanowire oxidation: the influence of sidewall structure and gold distribution.

Sivakov VA, Scholz R, Syrowatka F, Falk F, Gösele U, Christiansen SH.

Nanotechnology. 2009 Oct 7;20(40):405607. doi: 10.1088/0957-4484/20/40/405607. Epub 2009 Sep 8.

PMID:
19738306
20.

Large area fabrication of vertical silicon nanowire arrays by silver-assisted single-step chemical etching and their formation kinetics.

Srivastava SK, Kumar D, Schmitt SW, Sood KN, Christiansen SH, Singh PK.

Nanotechnology. 2014 May 2;25(17):175601. doi: 10.1088/0957-4484/25/17/175601. Epub 2014 Apr 9.

PMID:
24717841
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