Field-effect transistors based on amorphous black phosphorus ultrathin films by pulsed laser deposition

Zhibin Yang; Jianhua Hao; Shuoguo Yuan; Shenghuang Lin; Hei Man Yau; Jiyan Dai; Shu Ping Lau

doi:10.1002/adma.201500990

Field-effect transistors based on amorphous black phosphorus ultrathin films by pulsed laser deposition

Adv Mater. 2015 Jul 1;27(25):3748-54. doi: 10.1002/adma.201500990. Epub 2015 May 13.

Authors

Zhibin Yang¹, Jianhua Hao¹, Shuoguo Yuan¹, Shenghuang Lin¹, Hei Man Yau¹, Jiyan Dai¹, Shu Ping Lau¹

Affiliation

¹ Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom Kowloon, Hong Kong, P. R. China.

PMID: 25973767
DOI: 10.1002/adma.201500990

Abstract

Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect trans-istors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nano-electronic devices.

Keywords: amorphous ultrathin films; black phosphorus; field-effect transistors; pulsed laser deposition; wafer-scale.