High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors

Mohamad Insan Nugraha; Roger Häusermann; Satria Zulkarnaen Bisri; Hiroyuki Matsui; Mykhailo Sytnyk; Wolfgang Heiss; Jun Takeya; Maria Antonietta Loi

doi:10.1002/adma.201404495

High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors

Adv Mater. 2015 Mar 25;27(12):2107-12. doi: 10.1002/adma.201404495. Epub 2015 Feb 17.

Authors

Mohamad Insan Nugraha¹, Roger Häusermann, Satria Zulkarnaen Bisri, Hiroyuki Matsui, Mykhailo Sytnyk, Wolfgang Heiss, Jun Takeya, Maria Antonietta Loi

Affiliation

¹ Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands; Department of Advanced Materials Science, School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.

PMID: 25688488
DOI: 10.1002/adma.201404495

Abstract

Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm(2) V(-1) s(-1) ) and the high on/off ratio (10(5) -10(6) ), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.

Keywords: ambipolar transistors; colloidal nanocrystals; density of trap states; field effect transistors.