Perovskite thin films via atomic layer deposition

Brandon R Sutherland; Sjoerd Hoogland; Michael M Adachi; Pongsakorn Kanjanaboos; Chris T O Wong; Jeffrey J McDowell; Jixian Xu; Oleksandr Voznyy; Zhijun Ning; Arjan J Houtepen; Edward H Sargent

doi:10.1002/adma.201403965

Perovskite thin films via atomic layer deposition

Adv Mater. 2015 Jan 7;27(1):53-8. doi: 10.1002/adma.201403965. Epub 2014 Oct 30.

Authors

Brandon R Sutherland¹, Sjoerd Hoogland, Michael M Adachi, Pongsakorn Kanjanaboos, Chris T O Wong, Jeffrey J McDowell, Jixian Xu, Oleksandr Voznyy, Zhijun Ning, Arjan J Houtepen, Edward H Sargent

Affiliation

¹ Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada.

PMID: 25359103
DOI: 10.1002/adma.201403965

Abstract

A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

Keywords: atomic layer deposition; optical gain; perovskites; transient absorption.