Demonstration of molecular assembly on Si (100) for CMOS-compatible molecule-based electronic devices

Nadine Gergel-Hackett; Christopher D Zangmeister; Christina A Hacker; Lee J Richter; Curt A Richter

doi:10.1021/ja800378b

Demonstration of molecular assembly on Si (100) for CMOS-compatible molecule-based electronic devices

J Am Chem Soc. 2008 Apr 2;130(13):4259-61. doi: 10.1021/ja800378b. Epub 2008 Mar 7.

Authors

Nadine Gergel-Hackett¹, Christopher D Zangmeister, Christina A Hacker, Lee J Richter, Curt A Richter

Affiliation

¹ Semiconductor Electronics Division, Electronics and Electrical Engineering Laboratory, and Chemical Science and Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.

PMID: 18324818
DOI: 10.1021/ja800378b

Abstract

In this work, we establish the potential of a UV-promoted direct attachment of alkanes with alcohol and thiol linkers to the silicon (100) surfaces for use in molecular electronic devices with increased potential for integration with existing CMOS technologies. Characterization of the self-assembled monolayers via Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and X-ray photoemission spectroscopy shows that the films assembled on the Si (100) are comparable in quality, aliphatic monolayer coverage, and extent of substrate oxidation to those assembled on the more extensively studied Si (111) crystal face. Simple Si (100)-based electronic devices fabricated with the monolayers exhibited molecule-dependent electrical characteristics. These data highlight the effectiveness of the assembly on Si (100), the ability to fabricate enclosed Si (100)-based molecular devices, and the potential for the future integration of these devices with more conventional technologies.