Hole confinement in boron delta -doped silicon quantum wells studied by deep-level transient spectroscopy
Phys Rev B Condens Matter
.
1996 Jul 15;54(4):2662-2666.
doi: 10.1103/physrevb.54.2662.
Authors
Jh Zhu
,
Dw Gong
,
B Zhang
,
F Lu
,
C Sheng
,
Hh Sun
,
X Wang
PMID:
9986115
DOI:
10.1103/physrevb.54.2662
No abstract available