Theory of the impurity-doping effect on electronic states in a quantum well of arbitrary depth of a semiconductor
Phys Rev B Condens Matter
.
1986 Jul 15;34(2):1041-1049.
doi: 10.1103/physrevb.34.1041.
Author
M Takeshima
PMID:
9939719
DOI:
10.1103/physrevb.34.1041
No abstract available