We demonstrate a mechanism for magnetoresistance oscillations in insulating states of two-dimensional (2D) materials arising from the interaction of the 2D layer and proximal graphite gates. We study a series of devices based on different 2D systems, including mono- and bilayer T_{d}-WTe_{2}, MoTe_{2}/WSe_{2} moiré heterobilayers, and Bernal-stacked bilayer graphene, which all share a similar graphite-gated geometry. We find that the 2D systems, when tuned near an insulating state, generically exhibit magnetoresistance oscillations corresponding to a high-density Fermi surface, in contravention of naïve band theory. Simultaneous measurement of the resistivity of the graphite gates shows that the oscillations of the sample layer are precisely correlated with those of the graphite gates. Further supporting this connection, the oscillations are quenched when the graphite gate is replaced by a low-mobility metal, TaSe_{2}. The observed phenomenon arises from the oscillatory behavior of graphite density of states, which modulates the device capacitance and, as a consequence, the carrier density in the sample layer even when a constant electrochemical potential is maintained between the sample and the gate electrode. Oscillations are most pronounced near insulating states where the resistivity is strongly density dependent. Our study suggests a unified mechanism for quantum oscillations in graphite-gated 2D insulators based on electrostatic sample-gate coupling.