Optimizing the Properties of InGaZnOx Thin Film Transistors by Adjusting the Adsorbed Degree of Cs+ Ions

He Zhang; Yaogong Wang; Ruozheng Wang; Xiaoning Zhang; Chunliang Liu

doi:10.3390/ma12142300

Optimizing the Properties of InGaZnO_x Thin Film Transistors by Adjusting the Adsorbed Degree of Cs⁺ Ions

Materials (Basel). 2019 Jul 18;12(14):2300. doi: 10.3390/ma12142300.

Authors

He Zhang^{1

2}, Yaogong Wang^{3

4}, Ruozheng Wang^{1

2}, Xiaoning Zhang^{1

2}, Chunliang Liu^{1

2}

Affiliations

¹ Key Laboratory of Physical Electronics and Devices, Xi'an Jiaotong University, Ministry of Education, Xi'an 710049, China.
² School of Electronic and Information Engineering, Xi'an 710049, China.
³ Key Laboratory of Physical Electronics and Devices, Xi'an Jiaotong University, Ministry of Education, Xi'an 710049, China. wyg008@xjtu.edu.cn.
⁴ School of Electronic and Information Engineering, Xi'an 710049, China. wyg008@xjtu.edu.cn.

Abstract

To improve the performance of amorphous InGaZnO_x (a-IGZO) thin film transistors (TFTs), in this thesis, Cs⁺ ions adsorbed IGZO (Cs-IGZO) films were prepared through a solution immersion method at low temperature. Under the modification of surface structure and oxygen vacancies concentrations of a-IGZO film, with the effective introduction of Cs⁺ ions into the surface of a-IGZO films, the transfer properties and stability of a-IGZO TFTs are greatly improved. Different parameters of Cs⁺ ion concentrations were investigated in our work. When the Cs⁺ ions concentration reached 2% mol/L, the optimized performance Cs-IGZO TFT was obtained, showing the carrier mobility of 18.7 cm² V^-1 s^-1, the OFF current of 0.8 × 10^-10 A, and the threshold voltage of 0.2 V, accompanied by the threshold voltage shifts of 1.3 V under positive bias stress for 5000 s.

Keywords: IGZO TFTs; device performance; ions adsorption; low-temperature fabrication.