N-rich silicon nitride angled MMI for coarse wavelength division (de)multiplexing in the O-band

Opt Lett. 2018 Mar 15;43(6):1251-1254. doi: 10.1364/OL.43.001251.

Abstract

We report the design and fabrication of a compact angled multimode interferometer (AMMI) on a 600 nm thick N-rich silicon nitride platform (n=1.92) optimized to match the International Telecommunication Union coarse wavelength division (de)multiplexing standard in the O telecommunication band. The demonstrated device exhibited a good spectral response with Δλ=20 nm, BW3 dB∼11 nm, IL<1.5 dB, and XT∼20 dB. Additionally, it showed a high tolerance to dimensional errors <120 pm/nm and low sensitivity to temperature variations <20 pm/°C, respectively. This device had a footprint of 0.02 mm×1.7 mm with the advantage of a simple design and a back-end-of-line compatible fabrication process that enables multilayer integration schemes due to its processing temperature <400°C.