The BaZrSi3 O9 :Cr3+ phosphors were prepared by a high temperature solid state method. Their structures were confirmed with XRD and their luminescence properties were investigated. Under excitation at 455 nm, BaZrSi3 O9 :Cr3+ phosphors exhibited a broad near infrared emission band peaked at 800 nm, which was assigned to the 4 T2 →4 A2 transition of Cr3+ . The near infrared emission intensity reached a maximum at Cr3+ concentration of 0.7%. There was a concentration quenching phenomenon of Cr3+ in BaZrSi3 O9 matrix and the corresponding concentration quenching mechanism was investigated. With efficient near infrared emission in the range of 700-1000 nm, BaZrSi3 O9 :Cr3+ phosphors may find applications in solar energy conversion.
Keywords: BaZrSi3O9:Cr3+; near infrared; phosphor.
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